Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.

Abstract: Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.

Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.

Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6??I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.

Abstract: Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

Abstract: A liquid composite high-intensity sweetener, comprises a sweet substance and a solvent, wherein the sweet substance is one or combination of a plurality of the following components: aspartame, sucralose, acesulfame and neotame; and the solvent comprises water and one or combination of a plurality of the following components: ethanol, propylene glycol, phosphoric acid, citric acid, lactic acid, acetic acid, malic acid, ascorbic acid, glucose acid, tartaric acid, acetate, lactate, citrate, phosphate, sorbic acid, sorbate, benzoic acid and benzoate. In addition, the present invention further claims a method for preparing the liquid composite high-intensity sweetener. The liquid composite high-intensity sweetener not only has sweet taste similar to sucrose and good quality, but also is mixed uniformly without particles remained; the actual requirements of production and consumption are well met.

Abstract: Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.