Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: An antenna and an active antenna system to reduce complexity and power consumption of an antenna device, and reduce production costs, where the antenna includes an antenna array, a multichannel front-end, a multi-beam receiving network, and a multi-beam transmitting network. The antenna array includes w antenna elements, the multi-beam transmitting network is configured to perform beamforming processing on j transmit signal beams to obtain m transmit signals, the multichannel front-end is configured to convert w first radio-frequency signals received by the w antenna elements into n received signals, and convert the m transmit signals obtained by the multi-beam transmitting network into w second radio-frequency signals, where both n and m are less than or equal to w, and the multi-beam receiving network is configured to perform beamforming processing on the n received signals generated by the multichannel front-end to obtain k received signal beams.

Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

Abstract: Embodiments of the present invention provide a beam forming network, including: a first 180-degree bridge for equal-power division, a 180-degree bridge for unequal-power division, a 90-degree phase shifter, and a second 180-degree bridge for equal-power division. A coupling port of a sum input port of the first 180-degree bridge for equal-power division is connected to a difference input port of the 180-degree bridge for unequal-power division, a straight-through port of the sum input port of the first 180-degree bridge for equal-power division is connected to an input port of the 90-degree phase shifter, an output port of the 90-degree phase shifter is connected to a difference input port of the second 180-degree bridge for equal-power division, and a straight-through port of a sum input port of the 180-degree bridge for unequal-power division is connected to a sum input port of the second 180-degree bridge for equal-power division.

Abstract: An electromagnetic dipole antenna designed in the present invention includes an antenna radiating unit and a metal ground, where the antenna radiating unit mainly includes vertical electric dipole and horizontal magnetic dipole, where the vertical electric dipole and the horizontal magnetic dipole jointly form an electromagnetic coupling structure. The antenna has advantages of small size, low profile, and the like.

Abstract: The present invention discloses an antenna system, where the antenna system includes an antenna module, configured to: receive and/or transmit at least one first radio frequency signal, and at least one second radio frequency signal; a power-split phase-shift network module, configured to control an amplitude and a phase of each radio frequency signal in the antenna module, where control parameters for controlling an amplitude and a phase of each first radio frequency signal are configured according to a beam pointing direction and a beam width that are required by a three-dimensional building region, and control parameters for controlling an amplitude and a phase of each second radio frequency signal are configured according to a beam pointing direction and a beam width that are required by a ground region. Therefore, a problem of high costs and difficulty in obtaining an antenna site and maintaining an antenna is resolved.

Abstract: The present invention discloses a multi-beam antenna system, comprising: a one-dimensional multi-beam forming module connected to a radio frequency port, configured to convert a radio frequency signal transmitted by the radio frequency port into M radio frequency signals having different phases; a two-dimensional multi-beam forming module, which includes M first power division units, and a phase shifter is disposed on P output tributaries of each first power division unit; and M×N radiating elements, where the M×N radiating elements form a matrix having N rows and M columns, M columns of radiating elements are respectively connected to the M first power division units, N radiating elements in each column of radiating elements are respectively connected to N output tributaries of one first power division unit, and M×P radiating elements connected to output tributaries disposed with a phase shifter form a matrix having P rows and M columns.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma chamber that may generate plasma to remove monolayer(s) of the substrate. The plasma process may include a two-step process that uses a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transitions to a second plasma or moves the substrate to a different location within the first plasma that has a higher ion energy. In one specific embodiment, the transition between the first and second plasma may be enabled by changing the position of the substrate relative to the source electrode with no or relatively small changes in plasma process conditions.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract: According to a communication method and a base station that are provided in embodiments of the present invention, the base station transmits a broad beam that covers a sector of the base station and narrow beams whose coverage areas completely fall within a coverage area of the broad beam, which implements that under a premise that a coverage area of the sector of the base station maintains unchanged by using the broad beam, enhanced coverage of the sector is further achieved by using the narrow beams, thereby improving spectral efficiency. In the solutions, a sector coverage area of the broad beam transmitted by the base station still maintains unchanged, and therefore, a coverage relationship between sectors is not affected. In addition, neither an additional site backhaul resource nor additional standardization support is required in the solutions.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract: Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately non-linear cross section, and protrude into the surface of the dielectric plate. Such structural features may include feature depth, width, and periodic patterns that may vary depth and width along the concentric rings.