Abstract: Systems and methods for measuring a temperature using an optical whispering gallery mode (WGM) resonator are disclosed. The system includes a WGM resonator operatively coupled to a tunable laser source and a detector, as well as a computing device. The computing device is configured to transform a transmission spectrum from the detector into a measured barcode that includes a matrix of values indicative of at least one characteristic of the transmission spectrum. The computing device is further configured to transform the measured barcode into a temperature based on a relative collective shift of the measured barcode from a reference barcode selected from a predetermined library of reference barcodes.

Abstract: Systems and methods for generating a video including a plurality of graphic objects provided in a shared environment is described. The method includes acquiring, at a first computing device, a shared session identifier from a shared session manager, the shared session identifier being associated with a first user identifier, receiving a selection of a second user identifier, causing the shared session identifier and the first user identifier to be provided to a second computing device associated with the second user identifier, receiving as input, a first graphic object for rendering to a display associated with the first computing device, the first graphic object being associated with the first user identifier, receiving from a data synchronizer, a second graphic object associated with the second user identifier and the shared session identifier for rendering to the display associated with the second computing device, and generating a video including graphic objects.

Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.

Abstract: The present disclosure is relates to an artificial leather. The artificial leather includes multi-layer thermoplastic polyurethane (TPU) mesh layers. Fiber fineness of the TPU mesh layers ranges from 5 ?m to 30 ?m, and peeling strength of the TPU mesh layers is greater than 2.5 Kg/cm.

Abstract: In some embodiments, the present disclosure relates to a method in which a first set of one or more voltage pulses is applied to a piezoelectric device over a first time period. During the first time period, the method determines whether a performance parameter of the piezoelectric device has a first value that deviates from a reference value by more than a predetermined value. Based on whether the first value deviates from the reference value by more than the predetermined value, the method selectively applies a second set of one or more voltage pulses to the piezoelectric device over a second time period. The second time period is after the first time period and the second set of one or more voltage pulses differs in magnitude and/or polarity from the first set of one or more voltage pulses.

Abstract: The present disclosure provides an artificial leather structure, comprising a woven layer, a porous elastomer layer disposed on the woven layer and a nonwoven layer disposed on the porous elastomer layer. The porous elastomer layer is adhered to the woven layer and the nonwoven layer.

Abstract: In some embodiments, the present disclosure relates to a method for recovering degraded device performance of a piezoelectric device. The method includes operating the piezoelectric device in a performance mode by applying one or more voltage pulses to the piezoelectric device, and determining that a performance parameter of the piezoelectric device has a first value that has deviated from a reference value by more than a predetermined threshold value during a first time period. During a second time period, the method further includes applying a bipolar loop to the piezoelectric device, comprising positive and negative voltage biases. During a third time period, the method further includes operating the piezoelectric device in the performance mode, wherein the performance parameter has a second value. An absolute difference between the second value and the reference value is less than an absolute difference between the first value and the reference value.

Abstract: In some embodiments, the present disclosure relates to a method of forming a metal-insulator-metal (MIM) device. The method may be performed by depositing a bottom electrode layer over a substrate, depositing a dielectric layer over the bottom electrode layer, depositing a top electrode layer over the dielectric layer, and depositing a first titanium getter layer over the top electrode layer. The first titanium getter layer, the top electrode layer, and the dielectric layer are patterned to expose a peripheral portion of the bottom electrode layer. A passivation layer is deposited over the substrate, the first titanium getter layer, and the peripheral portion of the bottom electrode layer.

Abstract: An electrical connector includes at least one electrical module. The electrical module includes: an insulating body, where multiple first accommodating slots are concavely provided on a first side toward a second side of the insulating body; multiple first terminal assemblies, respectively accommodated in the corresponding first accommodating slots; and a first grounding member, having multiple first spokes and multiple second spokes. Each first terminal assembly includes a first insulating block, a pair of first signal terminals, and a first shielding shell. Each first shielding shell has a first shielding side surface exposed to the first side. Each first spoke is in mechanical contact with the first shielding shells of a same electrical module, and each second spoke is in contact with the first shielding side surface of the corresponding first shielding shell, thus achieving conduction between the first shielding shells and the first grounding member.

Abstract: In some embodiments, the present disclosure relates to a metal-insulator-metal (MIM) device. The MIM device includes a substrate, and a first and second electrode stacked over the substrate. A dielectric layer is arranged between the first and second electrodes. Further, the MIM device includes a titanium getter layer that is disposed over the substrate and separated from the dielectric layer by the first electrode. The titanium getter layer has a higher getter capacity for hydrogen than the dielectric layer.

Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.

Abstract: An electrical connector includes an insulating body accommodating multiple first terminals. The first terminals include first and second differential signal pairs. No ground terminal is provided at one side of the first differential signal pair. Both sides of the second differential signal pair have ground terminals. The impedance of the first differential signal pair is adjusted by having a distance between the first differential signal pair and the first ground terminal less than a distance between the second differential signal pair and the first ground terminal, or by having a width of a portion of the first differential signal pair exposed out of the insulating body greater than a width of a portion of the second differential signal pair exposed out of the insulating body, or by having a distance between terminals of the first differential signal pair less than a distance between terminals of the second differential signal pair.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.

Abstract: An electrical connector includes an insulating body accommodating multiple first terminals. The first terminals include first and second differential signal pairs. No ground terminal is provided at one side of the first differential signal pair. Both sides of the second differential signal pair have ground terminals. The impedance of the first differential signal pair is adjusted by having a distance between the first differential signal pair and the first ground terminal less than a distance between the second differential signal pair and the first ground terminal, or by having a width of a portion of the first differential signal pair exposed out of the insulating body greater than a width of a portion of the second differential signal pair exposed out of the insulating body, or by having a distance between terminals of the first differential signal pair less than a distance between terminals of the second differential signal pair.

Abstract: The present disclosure is relates to an artificial leather. The artificial leather includes multi-layer thermoplastic polyurethane (TPU) mesh layers. Fiber fineness of the TPU mesh layers ranges from 5 ?m to 30 ?m, and peeling strength of the TPU mesh layers is greater than 2.5 Kg/cm.

Abstract: The present disclosure is relates to an artificial leather and a method of manufacturing the same. The manufacturing method of the artificial leather includes steps in which TPU particles are provided. The method continues with step in which the TPU particles are heated to be melted. The method continues with step in which a first TPU mesh layer is formed by meltblowing the melted TPU. The method continues with step in which a second TPU mesh layer is meltblown on the first TPU mesh layer so as to form a multi-layer TPU mesh layer structure. The method continues with step in which the multilayer TPU mesh layer structure is heat pressed to form the artificial leather.

Abstract: In some embodiments, the present disclosure relates to a metal-insulator-metal (MIM) device. The MIM device includes a substrate, and a first and second electrode stacked over the substrate. A dielectric layer is arranged between the first and second electrodes. Further, the MIM device includes a titanium getter layer that is disposed over the substrate and separated from the dielectric layer by the first electrode. The titanium getter layer has a higher getter capacity for hydrogen than the dielectric layer.

Abstract: In some embodiments, the present disclosure relates to a method for recovering degraded device performance of a piezoelectric device. The method includes operating the piezoelectric device in a performance mode by applying one or more voltage pulses to the piezoelectric device, and determining that a performance parameter of the piezoelectric device has a first value that has deviated from a reference value by more than a predetermined threshold value during a first time period. During a second time period, the method further includes applying a bipolar loop to the piezoelectric device, comprising positive and negative voltage biases. During a third time period, the method further includes operating the piezoelectric device in the performance mode, wherein the performance parameter has a second value. An absolute difference between the second value and the reference value is less than an absolute difference between the first value and the reference value.