Abstract: The present invention offers a fixing structure for input keys, applied in personal digital assistant provided with function of a mobile telephone. On the backside of the case of a framework are provided a plurality of positioning elements and a plurality of thermomeltable elements respectively. On said positioning elements and thermomeltable elements are sheathed consecutively with elastic sheet, plate, circuit board and fixing plate. Each end of said thermomeltable elements is accommodated in corresponding recessed hole provided in said fixing plate to avoid interference with other parts. Pressing keys set up on elastic sheet can be just protruded from the case respectively, and by means of a bottom plate kept flat against the whole bottom, the fixing structure is completed. In this way, not only is the aim to decrease thickness of PDA achieved, but also it is convenient for users to carry.

Abstract: A removable cover assembly is to be assembled to the main body member of the electronic product. The main body member includes an upper housing and a lower housing. The lower housing has a groove of the rotation axis and at least one groove of the leading rail and the upper housing has a groove of the affixing buckling hook. The removable cover assembly includes a cover member and an affixing pushing cover, wherein the cover member includes a cover and a rotation axis that is affixed to both sides of the cover. The affixing pushing cover includes an affixing buckling hook and at least one leading rail, wherein the leading rail is located at the back side of the affixed pushing cover, and is with respect to the position of the groove of the leading rail. The affixing buckling hook is located on a side of the affixing pushing cover and is with respect to a position of a groove of the affixing buckling hook.

Abstract: Method, materials and structures are described for the fabrication of dual damascene features in integrated circuits. In via-first dual damascene fabrication, a bottom-antireflective-coating (“BARC”) is commonly deposited into the via and field regions surrounding the via, 107. Subsequent trench etch with conventional etching chemistries typically results in isolated regions of BARC, 107a, surrounded by “fencing” material, 108, at the bottom of the via. Such fencing hinders conformal coating with barrier/adhesion layers and can reduce device yield. The present invention relates to the formation of a BARC plug, 107c, partially filling the via and having a convex upper surface, 400, prior to etching the trench. Such a BARC structure is shown to lead to etching without the formation of fencing and a clean dual damascene structure for subsequent coating.

Abstract: A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.

Abstract: An erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas, comprises at least a portion that may be exposed to the plasma of the processing gas and that contains more than about 3% by weight of an oxide of a Group IIIB metal. The portion may also further contain a ceramic compound selected from silicon carbide, silicon nitride, boron carbide, boron nitride, aluminum nitride, aluminum oxide, and mixtures thereof.

Abstract: A cryogenic cooling system is configured to control the flow of a heat transfer fluid through a remote thermal load, such as a superconducting magnet or rotor. The cryogenic cooling system includes a refrigerator including a cryogenically cooled surface and a cryogenic fluid transport device disposed for circulating a heat transfer fluid between the cryogenically cooled surface and the remote thermal load. The cryogenic fluid transport device advantageously serves as device for providing the necessary mechanical force necessary to move the heat transfer fluid from the cryogenically cooled surface (e.g., end of a cryocooler) to the remote thermal load. Thus, unlike conventional cooling arrangements the heat transfer fluid does not require a phase change.

Abstract: We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon-containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. When the method of the invention is used, a higher carbon content in the carbon-containing silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon-containing silicon oxide film is plasma etched using a plasma generated from a source gas comprising NH3 and CxFy. It is necessary to achieve the proper balance between the relative amounts of NH3 and CxFy in the plasma source gas in order to provide a balance between etch by-product polymer deposition and removal on various surfaces of the substrate being etched.

Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

Abstract: A removable cover assembly is to be assembled to the main body member of the electronic product. The main body member includes an upper housing and a lower housing. The lower housing has a groove of the rotation axis and at least one groove of the leading rail and the upper housing has a groove of the affixing buckling hook. The removable cover assembly includes a cover member and an affixing pushing cover, wherein the cover member includes a cover and a rotation axis that is affixed to both sides of the cover. The affixing pushing cover includes an affixing buckling hook and at least one leading rail, wherein the leading rail is located at the back side of the affixed pushing cover, and is with respect to the position of the groove of the leading rail. The affixing buckling hook is located on a side of the affixing pushing cover and is with respect to a position of a groove of the affixing buckling hook.

Abstract: A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plasma source gas can comprise a gaseous species that comprises one or more nitrogen atoms and one or more fluorine atoms (e.g., NF3). As another example, the plasma source gas can comprise (a) a gaseous species that comprises one or more nitrogen atoms (e.g., N2) and (b) a gaseous species that comprises one or more fluorine atoms (e.g., a fluorocarbon gas such as CF4). In this etching step, the layer of C,H-doped silicon oxide is preferentially etched relative to the layer of undoped silicon oxide or F-doped silicon oxide. The method of the present invention is applicable, for example, to dual damascene structures.

Abstract: A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.

Abstract: A cryogenic refrigerator for cooling a rotating device includes a stationary regenerator, and a rotatable cold heat exchanger coupled to the stationary regenerator to rotate relative thereto. The cryogenic refrigerator is, for example, of the Gifford-McMahon type or pulse tube type. In the Gifford-McMahon type, a stationary cylinder houses the regenerator, and a rotatable cylinder mounted to the cold heat exchanger is concentrically arranged about the stationary cylinder. Alternatively, the rotatable cylinder is axially offset of the stationary cylinder. A seal, for example, a ferrofluidic seal, is located between the stationary and rotatable cylinders. In the pulse-tube type, a pulse tube is concentrically arranged about the regenerator, and the cold heat exchanger includes a stationary portion coupled to the regenerator and a rotatable portion coupled to the pulse tube. A back-up valve system is provided for increased reliability.

Abstract: A cryogenic cooling system is configured to control the flow of a heat transfer fluid through a remote thermal load, such as a superconducting magnet or rotor. The cryogenic cooling system includes a refrigerator including a cryogenically cooled surface and a cryogenic fluid transport device disposed within the refrigerator for circulating a heat transfer fluid between the cryogenically cooled surface and the remote thermal load. The cryogenic fluid transport device being positioned within the refrigerator advantageously serves as device for providing the necessary mechanical force necessary to move the heat transfer fluid from the cryogenically cooled surface (e.g., end of a cryocooler) to the remote thermal load. Thus, unlike conventional cooling arrangements the heat transfer fluid does not require a phase change.

Abstract: A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material.

Abstract: In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor substrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate bias voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlying layer of an organic dielectric.

Abstract: An erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas, comprises at least a portion that may be exposed to the plasma of the processing gas and that contains more than about 3% by weight of an oxide of a Group IIIB metal. The portion may also further contain a ceramic compound selected from silicon carbide, silicon nitride, boron carbide, boron nitride, aluminum nitride, aluminum oxide, and mixtures thereof.

Abstract: A personal digital assistant (PDA) with a multi-functional flip cover, which integrates the mobile phone function onto the flip cover so that the flip cover becomes the dial panel of the mobile phone when it is closed. The user can make and receive phone calls and read messages displayed on the screen. When it is open, the user can enjoy the PDA functions. The invention thus makes the mobile phone function of the PDA much convenient in use.

Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

Abstract: A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.

Abstract: The present invention offers a fixing structure for input keys, applied in personal digital assistant provided with function of a mobile telephone. On the backside of the case of a framework are provided a plurality of positioning elements and a plurality of thermomeltable elements respectively. On said positioning elements and thermomeltable elements are sheathed consecutively with elastic sheet, plate, circuit board and fixing plate. Each end of said thermomeltable elements is accommodated in corresponding recessed hole provided in said fixing plate to avoid interference with other parts. Pressing keys set up on elastic sheet can be just protruded from the case respectively, and by means of a bottom plate kept flat against the whole bottom, the fixing structure is completed. In this way, not only is the aim to decrease thickness of PDA achieved, but also it is convenient for users to carry.