Patents by Inventor Jin-Seon Park
Jin-Seon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11909099Abstract: An antenna module includes an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having a semiconductor chip embedded therein; and an electronic component disposed at a side of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The antenna module includes a connection substrate connected to a portion of the antenna substrate, the connection substrate having an extension portion extending outward from the side of the antenna substrate, and the electronic component is disposed on the extension portion of the connection substrate to electrically connect to an inner wiring layer of the antenna substrate.Type: GrantFiled: November 3, 2021Date of Patent: February 20, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Wook So, Jin Seon Park, Young Sik Hur, Jung Chul Gong, Yong Ho Baek
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Patent number: 11732354Abstract: A layer forming method according to one embodiment of the present invention contains a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.Type: GrantFiled: April 20, 2021Date of Patent: August 22, 2023Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Myung Mo Sung, Jinwon Jung, Jin Seon Park
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Patent number: 11539138Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: GrantFiled: October 20, 2021Date of Patent: December 27, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu Kim, Ho Kyung Kang, Seong Jong Cheon, Young Sik Hur, Jin Seon Park, Yong Duk Lee
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Publication number: 20220293867Abstract: An organic-inorganic hybrid layer, an organic-inorganic laminate having the same, and an organic electronic device having the same as a gas barrier are provided. The organic-inorganic laminate may include at least two metal oxide layers; and an organic-inorganic hybrid layer disposed between the metal oxide layers and including at least one unit layer including a metal atomic layer and an organic molecular layer represented by Formula 1 or 2 below: (—XaRa)(Xb1Rb)C(RcXc—)(RdXd—)??[Formula 1] (—XaRa)(—Xb2Rb)C(RcXc—)(RdXd—)??[Formula 2] In Formula 1 or Formula 2, a plurality of — means a bond with a metal in the metal atomic layer or the metal oxide layer regardless of each other, and Xa, Xb2, Xc, and Xd are O, S, Se or NH regardless of each other, Xb1 is hydrogen, and Ra, Rb, Rc, and Rd are, irrespective of each other, a bond or a C1 to C5 alkylene group.Type: ApplicationFiled: July 13, 2020Publication date: September 15, 2022Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Myung Mo SUNG, Jin Seon PARK
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Publication number: 20220059926Abstract: An antenna module includes an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having a semiconductor chip embedded therein; and an electronic component disposed at a side of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The antenna module includes a connection substrate connected to a portion of the antenna substrate, the connection substrate having an extension portion extending outward from the side of the antenna substrate, and the electronic component is disposed on the extension portion of the connection substrate to electrically connect to an inner wiring layer of the antenna substrate.Type: ApplicationFiled: November 3, 2021Publication date: February 24, 2022Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Wook SO, Jin Seon PARK, Young Sik HUR, Jung Chul GONG, Yong Ho BAEK
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Publication number: 20220037792Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: ApplicationFiled: October 20, 2021Publication date: February 3, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu KIM, Ho Kyung KANG, Seong Jong CHEON, Young Sik HUR, Jin Seon PARK, Yong Duk LEE
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Patent number: 11217543Abstract: An antenna module includes a fan-out semiconductor package including an IC, an encapsulant encapsulating at least a portion of the IC, a core member having a first side surface facing the IC or the encapsulant, and a connection member including at least one wiring layer electrically connected to the IC and the core member and at least one insulating layer; and an antenna package including a plurality of first directional antenna members configured to transmit or receive a first RF signal. The fan-out semiconductor package further includes at least one second directional antenna member disposed on a second side surface of the core member opposing the first side surface of the core member, stood up from a position electrically connected to at least one wiring layer, and configured to transmit or receive a second RF signal.Type: GrantFiled: July 29, 2020Date of Patent: January 4, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Doo Il Kim, Yong Ho Baek, Jin Seon Park, Young Sik Hur
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Patent number: 11183765Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: GrantFiled: June 3, 2020Date of Patent: November 23, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu Kim, Ho Kyung Kang, Seong Jong Cheon, Young Sik Hur, Jin Seon Park, Yong Duk Lee
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Patent number: 11177449Abstract: Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.Type: GrantFiled: December 12, 2019Date of Patent: November 16, 2021Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Myung Mo Sung, Jin Seon Park, Hongbum Kim, Hongro Yun
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Patent number: 11177551Abstract: An antenna module includes: an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having at least one semiconductor chip embedded therein; and an electronic component disposed on the lower surface or a side surface of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The electronic component has a thickness greater than that of the semiconductor chip.Type: GrantFiled: March 4, 2019Date of Patent: November 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Wook So, Jin Seon Park, Young Sik Hur, Jung Chul Gong, Yong Ho Baek
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Patent number: 11133592Abstract: A radio frequency module is provided. The module includes a core member, a front-end integrated circuit (FEIC), a first connection member, a second connection member disposed on an upper surface of the core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the second connection member, and configured to input or output a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, through a wiring layer, a substrate disposed on a lower surface of the first connection member; and an electrical connection structure configured to electrically connect the first connection member and the substrate. The FEIC is configured to input or output the first RF signal and a second RF signal which has a power different from a power of the first RF signal.Type: GrantFiled: June 3, 2020Date of Patent: September 28, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Ho Kyung Kang, Seong Jong Cheon, Hak Gu Kim, Young Sik Hur, Jin Seon Park, Yong Duk Lee
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Patent number: 11101840Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: GrantFiled: August 17, 2020Date of Patent: August 24, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu Kim, Ho Kyung Kang, Seong Jong Cheon, Young Sik Hur, Jin Seon Park, Yong Duk Lee
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Patent number: 11095037Abstract: An antenna module includes: a connection member including at least one wiring layer and at least one insulating layer; an integrated circuit (IC) disposed on a first surface of the connection member and electrically connected to the at least one wiring layer; an antenna package including antenna members configured to transmit or receive a radio frequency (RF) signal, a feed vias each having one end electrically connected to a respective one of the antenna members and another end electrically connected to the at least one wiring layer, and a dielectric layer having a height greater than a height of the at least one insulating layer, and having a first surface facing a second surface of the connection member; and dielectric members disposed in positions corresponding to the antenna members on the second surface of the antenna package.Type: GrantFiled: June 12, 2018Date of Patent: August 17, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Il Kim, Yong Ho Baek, Jin Seon Park, Young Sik Hur
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Publication number: 20210242595Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: ApplicationFiled: June 3, 2020Publication date: August 5, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu KIM, Ho Kyung KANG, Seong Jong CHEON, Young Sik HUR, Jin Seon PARK, Yong Duk LEE
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Publication number: 20210242594Abstract: A radio frequency module is provided. The module includes a core member, a front-end integrated circuit (FEIC), a first connection member, a second connection member disposed on an upper surface of the core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the second connection member, and configured to input or output a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, through a wiring layer, a substrate disposed on a lower surface of the first connection member; and an electrical connection structure configured to electrically connect the first connection member and the substrate. The FEIC is configured to input or output the first RF signal and a second RF signal which has a power different from a power of the first RF signal.Type: ApplicationFiled: June 3, 2020Publication date: August 5, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Ho Kyung KANG, Seong Jong CHEON, Hak Gu KIM, Young Sik HUR, Jin Seon PARK, Yong Duk LEE
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Publication number: 20210238738Abstract: A layer forming method according to one embodiment of the present invention contains a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.Type: ApplicationFiled: April 20, 2021Publication date: August 5, 2021Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANGUNIVERSITY)Inventors: Myung Mo SUNG, Jinwon JUNG, Jin Seon PARK
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Publication number: 20210242896Abstract: A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.Type: ApplicationFiled: August 17, 2020Publication date: August 5, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu KIM, Ho Kyung KANG, Seong Jong CHEON, Young Sik HUR, Jin Seon PARK, Yong Duk LEE
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Patent number: 11015243Abstract: A layer forming method according to one embodiment of the present invention comprises: a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.Type: GrantFiled: December 10, 2018Date of Patent: May 25, 2021Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Myung Mo Sung, Jinwon Jung, Jin Seon Park
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Patent number: 10991831Abstract: A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.Type: GrantFiled: December 18, 2018Date of Patent: April 27, 2021Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Myung Mo Sung, Jinwon Jung, Hongbum Kim, Jin Seon Park
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Patent number: 10985247Abstract: A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.Type: GrantFiled: December 10, 2018Date of Patent: April 20, 2021Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Myung Mo Sung, Jinwon Jung, Hongbum Kim, Jin Seon Park