Patents by Inventor Jin-Uk Lee

Jin-Uk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054238
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054286
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054283
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054284
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054281
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING
    Publication number: 20210054276
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054282
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054237
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054234
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    Publication number: 20210054285
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • COMPOSITION FOR ETCHING
    Publication number: 20210054279
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • COMPOSITION FOR ETCHING
    Publication number: 20210054277
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054236
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING
    Publication number: 20210054280
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • COMPOSITION FOR ETCHING
    Publication number: 20210054278
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • COMPOSITION FOR ETCHING
    Publication number: 20210047564
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 18, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Signal transmission connector
    Patent number: D908637
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: January 26, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim
  • Signal transmission connector
    Patent number: D908638
    Type: Grant
    Filed: August 1, 2020
    Date of Patent: January 26, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim
  • Signal transmission connector
    Patent number: D908639
    Type: Grant
    Filed: August 1, 2020
    Date of Patent: January 26, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim
  • Signal transmission connector
    Patent number: D909311
    Type: Grant
    Filed: August 1, 2020
    Date of Patent: February 2, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim