Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.

Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: An agricultural work vehicle according to an aspect of the present invention, which can adaptively adjust the velocity profile of the hitch according to the weight of the work machine, is characterized by comprising: a hitch on which an work machine is mounted; a weight calculation unit that calculates the weight of the work machine when the work machine is lifted following a first lift of the hitch; and a hitch controller that firstly lifts the hitch according to a reference velocity profile comprising a constant-velocity section (T) and, when calculation of the weight of the work machine is completed, generates an updated velocity profile comprising acceleration sections (a1, a2), constant-velocity sections (b1, b2), and deceleration sections (c1, c1) according to the weight of the work machine, and secondly lifts the hitch according to the updated velocity profile.

Abstract: A method of identifying and analyzing materials includes selecting at least two elements, collecting data of a plurality of compounds analyzed to be producible by the at least two elements, preparing image or spectrum-type analysis data for each of the plurality of collected compounds, selecting binary or higher-order compounds from among the plurality of compounds to mix the selected compounds at a predetermined mixing ratio, and generating training data including resultant data obtained by combining and processing the image or spectrum-type analysis data according to the predetermined mixing ratio, performing machine learning using the training data, and identifying and/or analyzing image or spectrum-type analysis data obtained from an actual material, using a model obtained through the machine learning.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: The present invention relates to a touch panel and, more particularly, to a touch panel capable of improving electrical conductive characteristics of the touch panel, reducing the size of the touch panel, improving the visibility of the touch panel, and minimizing damage to a substrate when a failure test is performed on the touch panel.

Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.

Abstract: A system for developing a composition for powder molding which, after a viscosity of the composition for powder molding and a degreasing process, extracts optimal compositional information of the composition in terms of the ratios of the residual binder materials is disclosed. Such a system includes a searching logic unit configured, after generating a plurality of candidate compositional information, to extract the optimal compositional information therefrom and a synthesis/analysis module configured to synthesize and analyze compositions corresponding to the plurality of candidate compositional information and provide to the searching logic unit measurement information on the viscosities of the compositions corresponding to each of the plurality of candidate compositional information and ratios of residual binder materials after a degreasing process.

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: The present invention relates to a touch panel and, more particularly, to a touch panel comprising: a substrate, which is divided into a valid area and an invalid area; sensing electrodes disposed in the valid area, thereby sensing a first input; touch electrodes disposed in the valid area so as not to overlap with the sensing electrode, thereby sensing a second input; first wirings disposed in the invalid area and connected to the sensing electrodes; and second wirings disposed in the invalid area and connected to the touch electrodes, wherein the touch electrodes are mesh form and disposed between the sensing electrodes, and each second wiring surrounds at least one sensing electrode and is electrically connected in a loop form.

Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.

Abstract: An agricultural work vehicle according to an aspect of the present invention, which can adaptively adjust the velocity profile of the hitch according to the weight of the work machine, is characterized by comprising: a hitch on which an work machine is mounted; a weight calculation unit that calculates the weight of the work machine when the work machine is lifted following a first lift of the hitch; and a hitch controller that firstly lifts the hitch according to a reference velocity profile comprising a constant-velocity section (T) and, when calculation of the weight of the work machine is completed, generates an updated velocity profile comprising acceleration sections (a1, a2), constant-velocity sections (b1, b2), and deceleration sections (c1, c1) according to the weight of the work machine, and secondly lifts the hitch according to the updated velocity profile.