Abstract: A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.

Abstract: Embodiments of the present invention are directed to resist underlayer surface modifications. In a non-limiting embodiment of the invention, a photoresist patterning stack includes a resist underlayer on a substrate. The resist underlayer includes a surface modification having one or more moieties. The moieties can include acid quencher moieties that limit acid diffusion during a post exposure bake. The acid quencher moieties can include a tert-butoxycarbonyl protecting group (tBOC)-blocked amine that can be copolymerized with an acid generating underlayer. The moieties can also include base-catalyzed crosslinking moieties selected such that base-catalyzed crosslinking can occur upon exposure to a predetermined developer. The base-catalyzed crosslinking moieties can include an acetal group and the predetermined developer can include tetramethylammonium hydroxide (TMAH).

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

Abstract: A thin-wall bearing, including an outer ring and an inner ring. The inner ring surface of the outer ring is provided with an outer ring raceway, and the outer ring surface of the inner ring is provided with an inner ring raceway. A steel ball and a cage for installing the steel ball are arranged between the outer ring raceway and the inner ring raceway. A plurality of screw holes are evenly distributed in a circle around the side wall of the outer ring, and knurled screws are provided in the screw holes, respectively. The fit between the knurled screw and the screw hole 10-?9 is to be N6/h5. The radial clearance of the thin-wall bearing is greater than or equal to 0.01 but less than or equal to 0.09. A processing method of the thin-wall bearing.

Abstract: A method of making an adhesion layer of an extreme ultraviolet (EUV) stack is presented. The method includes grafting an ultraviolet (UV) sensitive polymer brush on a hardmask, the polymer brush including a UV cleavable unit, depositing EUV resist over the polymer brush, exposing the EUV resist to remove the EUV resist in exposed areas by applying a developer, and flooding the exposed area with a UV light and a solvent developer to remove exposed portions of the polymer brush.

Abstract: Techniques for selective CD shrink for source and drain contact trench to optimize FET device performance are provided. In one aspect, a semiconductor FET device includes: at least one gate; source and drains on opposite sides of the at least one gate; recesses in the source and drains; and metal contacts disposed over the source and drains and in the recesses, wherein the metal contacts are in direct contact with a bottom and sidewalls of each of the recesses in both a first direction and a second direction, wherein the first direction is perpendicular to the at least one gate, and wherein the second direction is parallel to the at least one gate. A method of forming a semiconductor FET device is also provided.

Abstract: A dataset regarding a plurality of applications is obtained. A set of parameters is determined from the dataset, comprising at least a sample performance trajectory, a risk factor, and a performance outcome. A maximum likelihood of each performance outcome is determined using a likelihood function, the likelihood function being a mixture model of a trajectory model and an outcome model. The set of parameters is updated according to the maximum likelihood of each performance outcome. A performance trajectory model is built according to the updated set of parameters. The plurality of applications is then grouped into subgroups according to the performance trajectory model, each subgroup containing one or more applications, and each of the one or more applications in a given subgroup having a same or similar trajectory to each other. An alert associated with the applications in at least one of subgroups may be generated.

Abstract: The invention relates to a bicycle frame made by injection molding pellets of a long glass fibre reinforced polypropylene composition having a core containing glass fibres and an impregnating agent and a sheath of polypropylene surrounding said core, wherein the pellets have an average length of at least 1 mm, the amount of the glass fibers is 10 to 70 wt % with respect to the composition and the polypropylene has a flexural modulus determined according to ASTM D790A of at least 1000 N/mm2.

Abstract: The invention relates to a composition comprising: (A) a propylene-based polymer which is a propylene homopolymer or a propylene copolymer consisting of at least 90 wt % of propylene monomer units and at most 10 wt % of ethylene monomer units and/or an ?-olefin monomer units having 4 to 10 carbon atoms, (B) a terpolymer of propylene, an ?-olefin having 4 to 10 carbon atoms and ethylene and (C) a copolymer of ethylene and an ?-olefin having 4 to 10 carbon atoms, wherein the copolymer (C) has a density of at least 0.880 g/cm3, wherein the amount of the propylene-based polymer (A) is at least 60 wt % with respect to the total composition.

Abstract: The present disclosure encompasses compositions and methods for effectively treating at least one symptom or sign of A plaque or cerebral amyloid angiopathy (CAA) associated symptoms, or for decreasing amyloid plaque load or CAA load. The method comprises administering an effective amount of an anti-ApoE antibody to a mammalian subject, such as to a human.

Abstract: Disclosed is a universal input voltage detection system for a flyback converter having a transformer coupled between an input and an output of the flyback converter. The transformer includes a primary winding coupled to the input of the flyback converter to receive an input voltage and a secondary winding coupled to the output of the flyback converter. The universal input voltage detection system comprises a controller, coupled to a switch, at a primary winding side of the transformer. The switch is coupled to the primary winding of the transformer and a current through the primary winding is generated when the switch is turned on. The controller is configured to operate in either continuous conduction mode (CCM) or discontinuous conduction mode (DCM) and indirectly detect the input voltage to the flyback converter based on the current through the primary winding generated while the switch is turned on.

Abstract: Cold sintering of materials includes using a process of combining at least one inorganic compound, e.g., ceramic, in particle form with a solvent that can partially solubilize the inorganic compound to form a mixture; and applying pressure and a low temperature to the mixture to evaporate the solvent and densify the at least one inorganic compound to form sintered materials.

Abstract: A thin-wall bearing, including an outer ring and an inner ring. The inner ring surface of the outer ring is provided with an outer ring raceway, and the outer ring surface of the inner ring is provided with an inner ring raceway. A steel ball and a cage for installing the steel ball are arranged between the outer ring raceway and the inner ring raceway. A plurality of screw holes are evenly distributed in a circle around the side wall of the outer ring, and knurled screws are provided in the screw holes, respectively. The fit between the knurled screw and the screw hole 10-?9 is to be N6/h5. The radial clearance of the thin-wall bearing is greater than or equal to 0.01 but less than or equal to 0.09. A processing method of the thin-wall bearing.

Abstract: A method for fabricating a semiconductor device includes forming at least one sacrificial via within at least one self-aligned via hole of a base structure, forming a region having a misalignment relative to the at least one sacrificial via by cut patterning, and forming a cut cavity having a geometry for minimizing effects of the misalignment by protecting at least one self-aligned via due to the misalignment.

Abstract: An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.

Abstract: A metal brush layer is provided. The metal brush layer includes a polymer backbone including at least one grafting unit, G, attached to the polymer backbone, and a plurality of metal-containing moieties, M, attached to the polymer backbone.

Abstract: Cold sintering of materials includes using a process of combining at least one inorganic compound, e.g., ceramic, in particle form with a solvent that can partially solubilize the inorganic compound to form a mixture; and applying pressure and a low temperature to the mixture to evaporate the solvent and densify the at least one inorganic compound to form sintered materials.

Abstract: Provided are a vesicular adaptor and a single-chain cyclic library constructed by using the adaptor. The library can be used for RNA sequencing and other sequencing platforms dependent on a single-stranded cyclic library, and has the advantage of high throughput sequencing, high accuracy and simple operations.

Abstract: A method includes depositing a resist layer onto a hard mask layer to form a multi-layer patterning material film stack on a semiconductor substrate, directing patterning radiation onto the film stack to form a developed pattern in the resist layer and exposing the film stack to at least one gas precursor in connection with a sequential infiltration synthesis process. The film stack is configured to facilitate selective infiltration of the at least one gas precursor into the resist layer.

Abstract: A high-precision manufacturing machine used in precision manufacturing processes, such as a 3-D printer, is described. The machine has a frame, a movable platform supported by and movable relative to the frame, on which are mounted one or more platform tool holders for holding one or more tools such as an extruder, a base station that may include one or more bays, each of the bays having a number of base station tool holders, for storing tools that are not in use, and a supporting base, which may be movable relative to the frame, for holding one or more work items to be processed by the tool or tools selected and held by the movable platform.