Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be etched away, leaving the doped semiconductor layers as fins for a ribbon FET. A ferroelectric layer can be conformally grown on the fins, creating a high-quality ferroelectric layer above and below the fins. A gate can then be grown on the ferroelectric layer.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon FET. In another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. The interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.

Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.

Abstract: An evacuation station for collecting debris from a cleaning robot includes a controller configured to execute instructions to perform one or more operations. The one or more operations includes initiating an evacuation operation such that an air mover draws air containing debris from the cleaning robot, through an intake of the evacuation station, and through a canister of the evacuation station and such that a receptacle received by the evacuation station receives at least a portion of the debris drawn from the cleaning robot. The one or more operations includes ceasing the evacuation operation in response to a pressure value being within a range. The pressure value is determined based at least in part on data indicative of an air pressure, and the range is set based at least in part on a number of evacuation operations initiated before the evacuation operation.

Abstract: In one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (FE) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the FE material. The FE material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.

Abstract: A transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain metals and the

Abstract: In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.

Abstract: In various embodiments, a bimodal polyethylene may include a high molecular weight component and a low molecular weight component. The bimodal polyethylene may have a density of from 0.933 g/cm3 to 0.960 g/cm3, a melt index (I2) of from 0.3 dg/min to 1.2 dg/min, and a melt flow ratio (MFR21) greater than 70.0. The high molecular weight component may have a density of from 0.917 g/cm3 to 0.929 g/cm3, and a high load melt index (I21) of from 0.85 dg/min to 4.00 dg/min. The bimodal polyethylene may include from 40 wt. % to 60 wt % of the high molecular weight component. Methods for producing the bimodal polyethylene and articles manufactured from the bimodal polyethylene are also provided.

Abstract: Irradiation of low-density polyethylene resins with an electron beam produces modified polyethylene resins that have significantly improved melt strength and retain useful melt-index and have few cross-linked gels, if the starting LDPE resin and the level of irradiation are properly selected.

Abstract: A method includes determining, by a controller, a presence of an available electrical energy quantity generated from an energy generation event; comparing, by the controller, the available electrical energy quantity to an available energy capacity of a battery storage system; and responsive to determining the available electrical energy quantity exceeds the available energy capacity of the battery storage system, causing, by the controller, a transmission of at least a portion of the available energy quantity to a heat management system.

Abstract: In an approach to single wire hit detection, an apparatus comprises: a plurality of hit detection patches, each of the plurality of hit detection patches comprising an associated single coiled wire, and each of the plurality of hit detection patches being disposed overlapping at least one other hit detection patch of the plurality of hit detection patches; and a controller coupled to the associated single coiled wire of each hit detection patch of the plurality of hit detection patches, the controller configured to determine a location of one or more of the plurality of hit detection patches impacted by a projectile.

Abstract: The present disclosure provides a dual energy backscatter system that uses low energy and high energy radiation sources for object detection, characterization, and defect detection. The dual energy backscatter system may also be used to determine the internal structure of the object. The dual energy backscatter system may be used to detect objects underwater, including objects buried or partially buried in sand or sediment.

Abstract: An evacuation station for collecting debris from a cleaning robot includes a controller configured to execute instructions to perform one or more operations. The one or more operations includes initiating an evacuation operation such that an air mover draws air containing debris from the cleaning robot, through an intake of the evacuation station, and through a canister of the evacuation station and such that a receptacle received by the evacuation station receives at least a portion of the debris drawn from the cleaning robot. The one or more operations includes ceasing the evacuation operation in response to a pressure value being within a range. The pressure value is determined based at least in part on data indicative of an air pressure, and the range is set based at least in part on a number of evacuation operations initiated before the evacuation operation.

Abstract: The present disclosure provides systems and methods for charging multiple electric vehicles. In particular, the present disclosure provides a system having a single charger configured to connect with a plurality of electric vehicles and methods for charging one or more electric vehicles using said system. The present disclosure further provides a method for bidirectional current flow between the grid and the one or more electric vehicles.

Abstract: Embodiments are directed towards polyolefin compositions including a high molecular weight polyolefin and a low molecular weight polyolefin.

Abstract: Provided are bicomponent fibers with improved curvature. The bicomponent fibers comprise a first polymer region or first region and a second polymer region or second region. The first region according to embodiments of the present disclosure comprises an ethylene/alpha-olefin interpolymer and has a light scattering cumulative detector fraction (CDFLS) of greater than 0.1200, wherein the CDFLS is computed by measuring the area fraction of a low angle laser light scattering (LALLS) detector chromatogram greater than, or equal to, 1,000,000 g/mol molecular weight using Gel Permeation Chromatography (GPC). The second region comprises a polyester. The bicomponent fibers can be used for forming nonwovens.

Abstract: System comprising an internal combustion engine including a crankshaft, a crankshaft sprocket coupled to the crankshaft, an electric motor in mechanical communication with the crankshaft sprocket, a bidirectional engine position sensor coupled to the crankshaft sprocket, a controller in electrical communication with the bidirectional engine position sensor and a non-transitory memory having instructions that, in response to execution by a processor, cause the processor to determine a position of an engine component upon shutdown of the engine, store the position of the engine component at shutdown in the non-transitory memory, and control the electric motor at restart in response to the position of the engine component at shutdown are disclosed. Methods are also disclosed.

Abstract: A roof and rack assembly for a vehicle includes a roof assembly including a roof panel extending laterally from a first side panel to a second side panel of the vehicle, defining a recess between the each of the first side panel and second side panel, and the roof panel. One or more pedestal brackets are secured to the roof assembly at the recess. A rack assembly includes a pedestal located at each recess and secured to the pedestal bracket, and a crossbar extending between the pedestals and secured thereto.

Abstract: A low-density polyethylene having a melt strength measured at 190 C that is greater than or equal to 5.5 cN, a density that is greater than or equal to 0.9210 g/cm3 and less than or equal to 0.9275 g/cm3, and, and a melt index I2 measured at 190° C. that is greater than or equal to 4.5 g/10 min.

Abstract: A method includes determining, by a controller, a presence of an available electrical energy quantity generated from an energy generation event; comparing, by the controller, the available electrical energy quantity to an available energy capacity of a battery storage system; and responsive to determining the available electrical energy quantity exceeds the available energy capacity of the battery storage system, causing, by the controller, a transmission of at least a portion of the available energy quantity to a heat management system.