Abstract: A semiconductor memory device includes a lower stacked structure with lower metal lines on a substrate, an upper stacked structure with an upper metal line on the lower stacked structure, a vertical structure penetrating the upper and lower stacked structures and including a channel layer, a first cutting line through the upper and lower stacked structures, an upper supporter in a recess on the first cutting line, a second cutting line through the upper and lower stacked structures and spaced apart from the first cutting line, a sub-cutting line through the upper stacked structure while at least partially overlapping the vertical structure in the vertical direction, the sub-cutting line being between the first and second cutting lines, top surfaces of the upper supporter and sub-cutting line being coplanar, and a first interlayer insulating layer surrounding a sidewall of each of the upper supporter and the sub-cutting line.

Abstract: The present invention relates to a three-dimensional structure electrode, a method for manufacturing same, and an electrochemical element including the electrode. The present invention is characterized by comprising: (a) an upper conductive layer and a lower conductive layer which have a structure constituting an assembly within which a conductive material and a porous nonwoven fabric including a plurality of polymeric fibers are three-dimensionally connected in an irregular and continuous manner, thereby forming a mutually connected porous structure; and (b) an active material layer forming the same assembly structure as the conductive layers and forming a three-dimensionally filled structure in which electrode active material particles are uniformly filled inside the mutually connected porous structure formed in the assembly structure, wherein the active material layer is formed between the upper conductive layer and the lower conductive layer.

Abstract: The present invention relates to a novel naphthyridinone derivative compound, a pharmaceutically acceptable salt thereof, a hydrate thereof, or a stereoisomer thereof, which are each relevant to a compound for inhibiting ENPP1, a composition for inhibiting ENPP1, and a method for inhibiting ENPP1.

Abstract: An apparatus for controlling a discharge pressure of a fluid includes: a pump configured to suck the fluid through an inlet or to discharge the sucked fluid through an outlet; a distributor connected to the pump and to an injection nozzle provided by a sensor and configured to distribute the fluid discharged from the pump to the sensor; and a controller. The controller is configured to control the pump to operate selectively in accordance with detection of contamination of the sensor and to control operation of the distributor to be forcibly delayed during operation of the pump such that the fluid distributed to the sensor, when detected as being contaminated, is controlled to reach a selected required discharge pressure of different required discharge pressures selected in accordance with water amount information and a degree of contamination of the sensor.

Abstract: A positive electrode active material for a lithium secondary battery has secondary micro particles having an average particle size (D50) of 1 to 10 ?m formed by agglomeration of primary macro particles having an average particle size (D50) of 0.5 to 3 ?m and a lithium-M oxide coating layer on all or part of a surface, wherein M is at least one selected from the group consisting of boron, cobalt, manganese and magnesium. The secondary macro particles have an average particle size (D50) of 5 to 20 ?m formed by agglomeration of primary micro particles having a smaller average particle size (D50) than the primary macro particles. The primary macro particles and the primary micro particles are represented by LiaNi1?b?c?dCobMncQdO2+?, wherein 1.0?a?1.5, 0<b<0.2, 0<c<0.2, 0?d?0.1, 0<b+c+d?0.2, ?0.1???1.0, and Q is at least one type of metal selected from the group consisting of Al, Mg, V, Ti and Zr.

Abstract: The present invention relates to a convolutional artificial neural network-based image and video recognition system, and a method therefor. The recognition system comprises: a mobile device for performing lower layer analysis, transmitting a user question to a server, receiving an answer thereto from the server, and managing the same; the server connected to the mobile device over a network so as to perform data processing in respective neural network layers corresponding to middle and upper layers of a convolutional artificial neural network, and register, analyze, search for, and classify a particular object (image) and video; and a retriever for comparing an FC layer value for artificial neural network processing of an image and video transmitted by the mobile device with an FC layer value for artificial neural network processing of an image and video registered by a content provider.

Abstract: Disclosed is an electronic device according to various embodiments. The electronic device includes: a housing including a metal portion and a polymer portion, a substrate disposed in the housing, a connector disposed in the housing and that electrically connecting the metal portion and the substrate, and a screw fastening the metal portion of the housing and the connector and passing through the connector and at least a portion of the metal portion. The connector includes: a base portion seated on the metal portion and through which the screw passes, a movable portion at least partially facing the base portion and through which the screw passes, a bending portion connecting one side of the base portion and the movable portion, and a connecting portion extending from an opposite side of the base portion and connected to the substrate.

Abstract: A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.

Abstract: To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes.

Abstract: Provided is a method of cleaning an aerosol generating device, the method including: receiving a user input for performing a cleaning operation; obtaining information about a performance history of the cleaning operation in response to the user input; setting a mode of the cleaning operation to one of a plurality of cleaning modes based on the information about the performance history; and performing the cleaning operation according to the set cleaning mode.

Abstract: A positive electrode active material for a lithium secondary battery has a mixture of microparticles having a predetermined average particle size (D50) and macroparticles having a larger average particle size (D50) than the microparticles. The microparticles have the average particle size (D50) of 1 to 10 ?m and are at least one selected from the group consisting of particles having a carbon material coating layer on all or part of a surface of primary macroparticles having an average particle size (D50) of 1 ?m or more, particles having a carbon material coating layer on all or part of a surface of secondary particles formed by agglomeration of the primary macroparticles, and a mixture thereof. The macroparticles are secondary particles having an average particle size (D50) of 5 to 20 ?m formed by agglomeration of primary microparticles having a smaller average particle size (D50) than the primary macroparticles.

Abstract: Antibody-mediated rejection (ABMR) is one of the main obstacles to successful transplantation, including ABO blood group-incompatible (ABOi) transplantation. C4d deposition is a marker of ABMR and is also found in most ABOi allograft tissues. Described herein are anti-C4d CAR Tregs that suppress ABMR in ABOi allografts. Anti-C4d CAR Tregs prepared by retroviral transduction of CAR into CD62L +CD4 +CD25 +Tregs, expressed Foxp3, CD25, CTLA-4, LAP, and GITR to similar extents as non-transduced Tregs. Anti-C4d CAR Tregs were activated by specific binding to C4d and suppressed in vitro T cell proliferation as well as non-transduced Tregs. Furthermore, adoptive transfer of anti-C4d CAR Tregs significantly prolonged mouse ABOi heart allograft survival (P<0.05).

Abstract: An aerosol generating device includes a heater configured to heat an aerosol generating material to generate aerosol; a controller configured to: calculate a current flowing through the heater based on a predefined resistance of the heater and power supplied to the heater, measure the current flowing through the heater, and control the power supplied to the heater based on a difference between the calculated current and the measured current.

Abstract: A moisture-curable semiconductive formulation consisting essentially of a mixture of an ethylene/(alkenyl-functional hydrolyzable silane)/(optional olefinic hydrocarbon) copolymer and a conventional carbon black. Also discovered methods of making and using same, a moisture-cured semiconductive product made therefrom, and articles containing or made from same.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data b

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

Abstract: A moisture-curable semiconductive formulation consisting essentially of a polyethylene-based polymer blend (uncured) and a conventional carbon black. The polyethylene-based polymer blend comprises a mixture of an ethylene/(alkenyl-functional hydrolyzable silane)/(optional olefinic hydrocarbon) copolymer and an ethylene/unsaturated carboxylic ester copolymer that is free of moisture curable groups. We also discovered methods of making and using same, a moisture-cured semiconductive product made therefrom, and articles containing or made from same.

Abstract: A storage device, including: a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each zone of the plurality of zones, fixedly and sequentially manage logical addresses of data to be written in the plurality of zones, and generate at least two map tables for the each zone