Abstract: A system and method for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization system, is utilized to open and close the flow of film precursor vapor from the film precursor vaporization system to the process chamber.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

Abstract: An inductively coupled plasma source is provided with a compact inductive element that is configured to produce a spatially distributed plasma particularly suitable for processing large scale wafers. The element in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element is located outside of a dielectric wall or window of a processing chamber, generally congruent to the dielectric wall or window, formed of one or more layers or loops. The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element. The path is so shaped by cutouts along the side edges of the element. The conductor is formed of alternating sections of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.

Abstract: A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects.

Abstract: Different gases are separately exposed to RF energy in different zones in inlets to a processing chamber. Plasma is activated in the gases in each of the zones separately and the activated gases are then introduced into the plasma processing chamber where they may undergo mutual interaction within a processing zone. Control of the active species distribution within the processing chamber is provided by control of the energizing of the gases in the separate inlet zones before they are combined in the processing zone. An ICP source energizes gas in each zone through an antenna having one or more conductors, each of which is coupled to a plurality of the zones. This allows gases to be brought together in their active states, rather than being combined and then activated, and allows the same or different parameters to be applied in different inlet zones.

Abstract: An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive coatings. The i-ESIC device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An integrated inductive coupling element is provided at the perimeter of the substrate support that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.

Abstract: A treatment system is described for exposing a substrate to various processes. Additionally, a gas distribution system is configured to be coupled to and utilized with the treatment system in order to distribute process material above the substrate is provided. The treatment system includes a process chamber, a radical generation system coupled to the process chamber, a gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a temperature controlled pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Abstract: A method and apparatus for determining thickness of a metallic layer being deposited on a collector. The method includes applying an electromagnetic field to a conductive layer on the collector. Then the temperature or the change in temperature of the collector is determined. The metal thickness is determined as a function of the temperature or change in temperature. The apparatus includes a collector, a thermocouple associated with the collector, and a source of an electromagnetic field.

Abstract: Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.

Abstract: Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate.

Abstract: A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.

Abstract: Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0.5 mm from the window.

Abstract: A system and method is disclosed for vaporizing a solid precursor and transporting the precursor vapor to a process chamber. The film precursor vaporization system is coupled to the process chamber and positioned directly above the substrate. A precursor valve system within the film precursor vaporization system permits closing off the flow of precursor vapor to the process chamber while carrier gas flows through or over the film precursor, and once the carrier gas is saturated with precursor vapor, the precursor valve system is opened to permit the flow of precursor vapor to the substrate.

Abstract: An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An etching electrode is provided opposite the substrate support. An integrated inductive coupling element is provided at the perimeter of the etching electrode that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.

Abstract: The uniformity of a plasma distribution having a tendency to peak toward the axis of a processing chamber is improved by positioning a hollow body on the chamber axis with an open end facing the processing space. The hollow body controls the distribution of the plasma away from the center and allows plasma at the center. The geometry of the hollow body can be optimized to render the plasma uniform for given conditions. In combined deposition and etch processes, such as simultaneous and sequential etch and iPVD processes, the hollow body provides for a uniform plasma for etching while allowing deposition parameters to be optimized for deposition.

Abstract: A method and apparatus for determining thickness of a metallic layer being deposited on a collector. The method includes applying an electromagnetic field to a conductive layer on the collector. Then the temperature or the change in temperature of the collector is determined. The metal thickness is determined as a function of the temperature or change in temperature.