Abstract: A system and method for enhancing the plasma etch process uniformity in an ionized PVD semiconductor wafer processing system is provided. The system and method controls chamber conditions so as to produce highly uniform processing for a deposition-etch process sequence and yielding improved coverage capabilities of high aspect ratio (HAR) features when the deposition and etch steps are performed within same processing chamber. Plasma is generated and maintained by an inductively coupled plasma (ICP) source. In the deposition portions of the process, metal or other coating material is produced from a target of a PVD source. A segmented peripheral electrode surrounds the wafer at a distance from its outer edge. RF induced bias is applied to the electrode, cycling around the segment so as to subject each to a duty cycle controlled by a processor.

Abstract: Embodiments of an intelligent modeling method and system monitor and perform analysis of semiconductor processing equipment as well as predict future states of that equipment based on the analysis, predict failures of the semiconductor processing equipment and/or determine equipment maintenance schedules.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. An antenna for the source is provided having concentrated conductor segments through which current flows in one or more high efficiency portions that produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating low efficiency conductor segments permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma.

Abstract: A system and method is disclosed for vaporizing a solid precursor and transporting the precursor vapor to a process chamber. The film precursor vaporization system is coupled to the process chamber and positioned directly above the substrate. A precursor valve system within the film precursor vaporization system permits closing off the flow of precursor vapor to the process chamber while carrier gas flows through or over the film precursor, and once the carrier gas is saturated with precursor vapor, the precursor valve system is opened to permit the flow of precursor vapor to the substrate.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna for the source is a planer coil having at least two windings with the gap between the windings variable or modulated to control the antenna inductance around the antenna. The antenna has a plurality of, for example three, high inductance segments as a result of the conductor windings being closely spaced alternating with low inductance segments as a result of the conductor windings being widely spaced. The antenna and a shield are part of a plasma source.

Abstract: A system and method is disclosed for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization system, is utilized to open and close the flow of film precursor vapor from the film precursor vaporization system to the process chamber.

Abstract: A solid precursor vaporization system configured for use in a deposition system, such as thermal chemical vapor deposition (TCVD), is described. The solid precursor vaporization system comprises a plurality of concentric solid precursor cylinders supported on a gas distribution plate and configured to provide a substantially constant surface area as solid precursor is consumed.

Abstract: A system and method is disclosed for vaporizing a solid precursor and transporting the precursor vapor to a process chamber. The film precursor vaporization system is coupled to the process chamber and positioned directly above the substrate. A precursor valve system within the film precursor vaporization system permits closing off the flow of precursor vapor to the process chamber while carrier gas flows through or over the film precursor, and once the carrier gas is saturated with precursor vapor, the precursor valve system is opened to permit the flow of precursor vapor to the substrate.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate.

Abstract: Apparatus and methods to compensating for radial non-uniformities in the plasma sheath at a substrate held by an electrostatic chuck in a plasma processing system. The substrate is held by a substrate-supporting surface of the electrostatic chuck. The substrate-supporting surface is modified by providing a pattern of features characteristic of a compensating structure that corrects the radial non-uniformities in the plasma sheath and then covering the features conformally with a planarization coating of a dielectric material. The dielectric material fills and covers the pattern of features to provide multiple parallel capacitances defining the compensating structure. The pattern of features characterizing the compensating structure may be determined from a radial non-uniformity in a plasma-related parameter at the substrate-supporting surface.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable.

Abstract: An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus having slots with features therein which spatially distribute the transmitted RF power density through a baffle. The features form connections and current paths across the slot boundaries on the side of the baffle that faces the plasma, away from the window through which a coil couples RF power, thereby minimizing interference with the inductive coupling. In one embodiment, bridges across the slots on the plasma side of the baffle improve the flux distribution through the baffle. In another embodiment, blades in and parallel to the slots, on the coil side of the baffle but which are supported by connections on the plasma side of the baffle, reduce the formation of plasma in the slots and prevents resputtering of material from the slot boundaries.

Abstract: An inductively coupled plasma source is provided with a compact inductive element that is configured to produce a spatially distributed plasma particularly suitable for processing large scale wafers. The element in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element is located outside of a dielectric wall or window of a processing chamber, generally congruent to the dielectric wall or window, formed of one or more layers or loops. The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element. The path is so shaped by cutouts along the side edges of the element. The conductor is formed of alternating sections of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.

Abstract: An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive coatings. The i-ESIC device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An integrated inductive coupling element is provided at the perimeter of the substrate support that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.

Abstract: A method for characterizing the performance of an electrostatic chuck prior to installing the chuck in the vacuum chamber of a semiconductor processing system in a production line. One or more characteristics of the electrostatic chuck are measured and compared with the known characteristics of a reference chuck. The comparison indicates the performance of the chuck and projects the performance of the chuck in an actual operating environment. The characteristics that are measured include the chuck impedance, the current-voltage characteristic of the chuck, the local plasma density proximate the support surface of the chuck, and the cooling or heating rate of the chuck.

Abstract: Apparatus and methods to compensating for radial non-uniformities in the plasma sheath at a substrate held by an electrostatic chuck in a plasma processing system. The substrate is held by a substrate-supporting surface of the electrostatic chuck. The substrate-supporting surface is modified by providing a pattern of features characteristic of a compensating structure that corrects the radial non-uniformities in the plasma sheath and then covering the features conformally with a planarization coating of a dielectric material. The dielectric material fills and covers the pattern of features to provide multiple parallel capacitances defining the compensating structure. The pattern of features characterizing the compensating structure may be determined from a radial non-uniformity in a plasma-related parameter at the substrate-supporting surface.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.