Abstract: An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus. The baffle has a central circular part having slots cut therein that are interrupted by electrically conductive bridges. Ribs in the body between the slots have cooling fluid channel sections bored therein, which are joined in series by interconnecting channel portions in a peripheral annular part of the baffle to form a continuous serpentine cooling fluid flow path from an inlet to an outlet in the annular peripheral part of the baffle.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the window protects the window from deposition, but has slots through which some material can pass in a direction toward the window, the insert is placed between the window and the shield. The insert is formed of a material that is compatible with the process being carried out on a semiconductor wafer within the chamber. Where the window and shield are planar, an unprocessed wafer of the same type and material as the wafer being processed is used for the insert.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus having slots with features therein which spatially distribute the transmitted RF power density through a baffle. The features form connections and current paths across the slot boundaries on the side of the baffle that faces the plasma, away from the window through which a coil couples RF power, thereby minimizing interference with the inductive coupling. In one embodiment, bridges across the slots on the plasma side of the baffle improve the flux distribution through the baffle. In another embodiment, blades in and parallel to the slots, on the coil side of the baffle but which are supported by connections on the plasma side of the baffle, reduce the formation of plasma in the slots and prevents resputtering of material from the slot boundaries.

Abstract: To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the window protects the window from deposition, but has slots through which some material can pass in a direction toward the window, the insert is placed between the window and the shield. The insert is formed of a material that is compatible with the process being carried out on a semiconductor wafer within the chamber. Where the window and shield are planar, an unprocessed wafer of the same type and material as the wafer being processed is used for the insert.

Abstract: A processing system for processing a substrate with a plasma is provided with an antenna for producing a ring-shaped inductively coupled plasma in a vacuum processing chamber particularly useful for coating or etching semiconductor wafer substrates. A three-dimensional antenna in the form of a coil provides spacial distribution of plasma parameters in a ring-shaped region inside of the chamber that can be adapted to specific physical and process requirements. An axially symmetric permanent magnet assembly enhances the ring-shaped concentration of a high-density inductively coupled plasma by trapping the plasma in the ring-shaped region near the inside of a dielectric window located in the chamber wall in close proximity to segments of the antenna that lie adjacent the outside of the window.

Abstract: A method for characterizing the performance of an electrostatic chuck prior to installing the chuck in the vacuum chamber of a semiconductor processing system in a production line. One or more characteristics of the electrostatic chuck are measured and compared with the known characteristics of a reference chuck. The comparison indicates the performance of the chuck and projects the performance of the chuck in an actual operating environment. The characteristics that are measured include the chuck impedance, the current-voltage characteristic of the chuck, the local plasma density proximate the support surface of the chuck, and the cooling or heating rate of the chuck.

Abstract: A processing system 12 for processing a substrate with an ionized plasma comprises a processing chamber 13 defining a processing space 14 and including a substrate support 17, a gas inlet 20, and a plasma source for creating an ionized plasma in the processing space. The plasma source comprises an inductive element 24 operable for coupling electrical energy into the processing space. The inductive element 24 winds around portions of the processing space 14 inside the processing chamber 13 and is encased inside a dielectric material 30 to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply 98 for enhancing its magnetization to reduce the capacitive coupling of energy between the inductive element and the plasma.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process gas into said processing space. A plasma source is operable for creating a plasma in the processing space from process gas introduced therein. The plasma source comprises a dielectric window which interfaces with the processing chamber proximate the processing space and an inductive element positioned outside of the chamber and proximate the dielectric window. The inductive element is operable for coupling electrical energy through the dielectric window and into the processing space to create a plasma therein and comprises a variety of alternative designs for providing a dense, uniform plasma.

Abstract: An apparatus and method for regulating the plasma characteristics in a plasma processing system that includes a plasma generating assembly that generates a primarily inductively-coupled plasma from a process gas in a processing space to process a substrate. A walled enclosure is provided adjacent the processing space and is configured to generate a capacitively-coupled plasma from process gas therein. The enclosure further includes one or more outlets that permit the capacitively-coupled plasma to enter into the processing space. Charged particles from the capacitively-coupled plasma may be applied to alter the plasma density of the inductively-coupled plasma or to reduce the power required to generate the inductively-coupled plasma.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process gas into said processing space. A plasma source is operable for creating a plasma in the processing space from process gas introduced therein. The plasma source comprises a dielectric window which interfaces with the processing chamber proximate the processing space and an inductive element positioned outside of the chamber and proximate the dielectric window. The inductive element is operable for coupling electrical energy through the dielectric window and into the processing space to create a plasma therein and comprises a variety of alternative designs for providing a dense, uniform plasma.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process gas into said processing space. A plasma source is operable for creating a plasma in the processing space from process gas introduced therein. The plasma source comprises a dielectric window which interfaces with the processing chamber proximate the processing space and an inductive element positioned outside of the chamber and proximate the dielectric window. The inductive element is operable for coupling electrical energy through the dielectric window and into the processing space to create a plasma therein and comprises a variety of alternative designs for providing a dense, uniform plasma.