Abstract: A diffractive optical element including a diffraction layer including a plurality of optical axes along an in-plane direction, wherein the diffraction layer includes an anisotropic material that satisfies one of Relationship Equations 1A to 3A ?n1(450 nm)<?n1(550 nm)??n1(650 nm)??Relationship Equation 1A ?n1(450 nm)??n1(550 nm)<?n1(650 nm)??Relationship Equation 2A ?n1(450 nm)=?n1(550 nm)=?n1(650 nm)??Relationship Equation 3A wherein, in Relationship Equations 1A to 3A, ?n1 (450 nm) is a birefringence of the anisotropic material at a wavelength of 450 nanometers, ?n1 (550 nm) is a birefringence of the anisotropic material at a wavelength of 550 nanometers, and ?n1 (650 nm) is a birefringence of the anisotropic material at a wavelength of 650 nanometers.

Abstract: A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.

Abstract: Techniques are provided herein for creating well-balanced computer-based reasoning systems and using those to control systems. The techniques include receiving a request to determine whether to use one or more particular data elements, features, cases, etc. in a computer-based reasoning model (e.g., as data elements, cases or features are being added, or as part of pruning existing features or cases). Conviction measures are determined and inclusivity conditions are tested. The result of comparing the conviction measure can be used to determine whether to include or exclude the feature, case, etc. in the model and/or whether there are anomalies in the model. A controllable system may then be controlled using the computer-based reasoning model.

Abstract: A muffler may include a thin plate mesh provided in an internal space of an inlet chamber formed at a side opposite to an outlet chamber of a muffler housing such that gas contained in exhaust fluid passes through the thin plate mesh by collision of the exhaust fluid against the thin plate mesh and water contained in the exhaust fluid is separated from the gas; a water movement guide fluidically-connected to the inlet chamber and the outlet chamber for allowing the water gathered at the front side of the thin plate mesh in the internal space of the inlet chamber to flow therein and move to the outlet chamber; and a muffler pipe connected to the inlet chamber and the outlet chamber for allowing the gas gathered at the rear side of the thin plate mesh in the internal space of the inlet chamber to move to the outlet chamber.

Abstract: A seat ventilation blower may include a first housing; a second housing coupled and assembled to the first housing; an impeller inserted inside the first housing or the second housing, the impeller configured to rotate; and a circuit board body having a motor assembly coupled to the impeller to rotate the impeller wherein the circuit board body is configured to control operation of the motor assembly and installed in the housing when the first and second housings are coupled and assembled together.

Abstract: A filter is configured for chlorine using vitamin C, in which an impeller structure is formed on the upper part of the inside of a housing and the upper part of a cover so as to generate a whirling flow of raw water to uniformly mix vitamin C in the raw water. The filter is thereby capable of improving efficiency of removing chlorine components from the raw water. A space inside the housing is formed in a polygonal shape to fix a cylindrical capsule in the polygonal shape such that a plurality of vertical flow paths are formed by the space between the cylindrical capsule and the polygonal structure. Accordingly, the raw water flows at a uniform flow rate through the respective vertical flow paths, and the number of angles of the polygonal structure are formed according to a desired flow rate, thereby enabling the setting of flow rates.

Abstract: A poly(imide-amide) copolymer or its precursor includes two ends and a main chain located between the two ends, and includes a group represented by Chemical Formula 1 at one end, and a structural unit represented by Chemical Formula 7, and at least one of a structural unit represented by Chemical Formula 2 or a structural unit represented by Chemical Formula 3 in the main chain: wherein, in Chemical Formulae 1, 2, 3, and 7, R1 and Ar1 to Ar4 are the same as defined in the detailed description.

Abstract: A compensation film satisfies Inequalities 1 and 2, and an antireflective film and a display device are provided with the compensation film. 0.90 ? R e ? ( ?° ) + R e ? ( - ?° ) 2 ? ? R e ? ( 0 ? ° ) ? 1.20 , [ Inequality ? ? 1 ] where, in Inequality 1, Re (?°) is in-plane retardation of the compensation film in respective tilting direction at ?° with respect to the direction perpendicular to the optical axis of the compensation film, and Re(450 nm)<Re(550 nm)<Re(650 nm),??[Inequality 2] where, in Inequality 2, Re (450 nm), Re (550 nm) and Re (650 nm) are in-plane retardation of the compensation film in the direction perpendicular to the optical axis of the compensation film for incident light having a wavelength of 450 nanometers, 550 nanometers and 650 nanometers, respectively.

Abstract: Disclosed herein are a device and a method for changing a setting value of electric power equipment. The method for changing a setting value of electric power equipment, includes transmitting a data request signal including a predetermined communication address and receiving a response signal corresponding to the data request signal from a slave communication module corresponding to the communication address using the serial communication network, determining whether communication between the master communication module and the slave communication module is established normally on the basis of the data request signal and the response signal, receiving, from the response signal, model information of a slave communication module in which a setting value change event occurs among slave communication modules of which communications are established normally, and discriminating and displaying, among the slave communication modules of which the communications are established normally, a slave communication module.

Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Abstract: A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.

Abstract: A test pattern group includes a plurality of test patterns. Each of the plurality of test patterns includes a substrate including a first region and a second region, a first fin group and a second fin group each including fins extending on the first region of the substrate and the second region of the substrate. a first gate structure and a second gate structure each positioned on the first fin group and formed to intersect with the fins of the first fin group and the second fin group, a first source/drain contact formed on a first source/drain, a second source/drain contact formed on a second source/drain, a first gate contact formed on the first gate structure, and a second gate contact formed on the second gate structure. The number of fins included in the first fin group is greater than the number of fins included in the second fin group.

Abstract: A liquid crystal display includes a light source and a liquid crystal panel, wherein the liquid crystal panel includes a first substrate on the light source, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a color conversion layer between the second substrate and the liquid crystal layer, and including a light emitting element configured to receive a first visible light from the light source and emit a second visible light, a first polarizing layer between the liquid crystal layer and the color conversion layer, and a first phase difference layer between the liquid crystal layer and the first polarizing layer.

Abstract: A method of synthesizing aluminum nitride, the method includes: preparing mixed powder containing 0.5 to 8 wt % of zinc powder, 0.01 to 2 wt % of magnesium powder, 0.01 to 1 wt % of silicon powder, 0.01 to 1 wt % of copper powder, and a balanced amount of aluminum powder; preparing a feedstock of the mixed powder blended and filled with thermoplastic organic binder, by pressured kneading the mixed powder and the thermoplastic organic binder; forming granules of the feedstock by crushing the feedstock or forming a molded body of the feedstock via a powder molding method; and debinding the granules or the molded body by heating under a nitrogen gas atmosphere, and then performing direct nitridation between aluminum and a nitrogen gas at a temperature higher than a debinding temperature.

Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

Abstract: A test element group includes a test element including a plurality of test transistors connected in series between a first node and a second node, the second node being connected to a ground node; a first transistor connected between the first node and a power supply node; and a second transistor configured to generate an output current, proportional to a voltage at the first node, and connected to the first node and the power supply node.

Abstract: A retardation film including a retardation coating layer including a polyimide and a solvent, wherein the solvent has a vapor pressure of less than about 15 Torr at 20° C. and a solubility parameter satisfying Relationship Formula 1.

Abstract: A high-solid coating composition may include about 70 wt % to about 80 wt % of an acrylic resin; and about 15 wt % to about 21 wt % of a solvent, wherein a content of non-volatile components (NVs) is about 55 wt % to about 60 wt %, a solid by volume ratio (SVR) is about 50% to about 55%, and a combination factor (CF) value being an appearance evaluation index is about 78% or more.

Abstract: A voltage generator includes a pulse circuit and a slope circuit. The pulse circuit is to apply voltages of three different levels to an output terminal and the slope circuit is to apply a slope voltage to the output terminal. The slope circuit includes an inductor to take current out of a capacitive load connected to the output terminal.