Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

Abstract: A resource management method of an electronic apparatus according to an example embodiment includes storing resource information including at least one resource category for assorting hardware resources and software resources by type and an attribute category indicating attribute information of resources included in the at least one resource category in a memory of the electronic apparatus, and in response to an application requesting a specific resource, allocating the specific resource to the application based on the resource information.

Abstract: An organic light emitting diode device includes an organic light emitting display panel and a circular polarizing plate disposed on the organic light emitting display panel and including a polarizer and a compensation film, where a retardation of the compensation film in a first direction is determined based on a retardation of the organic light emitting display panel in the first direction.

Abstract: A test element group includes a test element including a plurality of test transistors connected in series between a first node and a second node, the second node being connected to a ground node; a first transistor connected between the first node and a power supply node; and a second transistor configured to generate an output current, proportional to a voltage at the first node, and connected to the first node and the power supply node.

Abstract: A muffler having a movable baffle may include a housing where an input pipe into which exhaust gas is flowed from an engine and an output pipe through which the exhaust gas is expelled to atmosphere are disposed, a baffle which is configured to be slidable along the longitudinal direction of the housing and divides the space of the housing, baffle moving means for moving the baffle to an arbitrary position within a predetermined range along the longitudinal direction of the housing, and a controller which data for determining whether to move the baffle or not is input thereto when the engine is driven, determines whether to move the baffle or not by use of the input data and controls the baffle moving means when the baffle is determined to be moved.

Abstract: A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a color conversion layer disposed on the liquid crystal layer, a first polarizing layer and a first phase difference layer disposed between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer disposed between a light source and the lower substrate, wherein the first phase difference layer has a refractive index satisfying Inequality 1 and the second phase difference layer has refractive indexes satisfying Inequality 2. nx1?ny1?nz1??[Inequality 1] nx2>nz2>ny2??[Inequality 2] In Inequalities 1 and 2, nx1, nx2, ny1, ny2, nz1, and nz2 are the same in the detailed description.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.

Abstract: The present invention relates to a recombination vector, a transformation cell into which the recombinant vector is introduced, a ribozyme expressed from the recombination vector, a prophylactic or therapeutic composition for liver cancer comprising the recombination vector and the ribozyme, and a therapeutic method for liver cancer using the composition, said recombination vector comprising: a tissue-specific promoter; and a ribozyme-target gene expression cassette comprising a trans-splicing ribozyme targeting a cancer-specific gene and a target gene connected to the 3? exon of the ribozyme, wherein a splicing donor/splicing acceptor sequence (SD/SA sequence) is connected to the 5? end of the ribozyme-target gene expression cassette, woodchuck hepatitis virus posttranscriptional regulatory element (WPRE) is connected to the 3? end of the ribozyme-target gene expression cassette, and a nucleic acid sequence recognizing a micro RNA-122a (microRNA-122a, miR-122a) is further connected to the 3? end of the WPRE.

Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Abstract: A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a color conversion layer disposed on the liquid crystal layer, a first polarizing layer and a first phase difference layer disposed between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer disposed between a light source and the lower substrate, wherein the first phase difference layer has a refractive index satisfying Inequality 1 and the second phase difference layer has refractive indexes satisfying Inequality 2. nx1?ny1>nz1 ??[Inequality 1] nx2>nz2>ny2 ??[Inequality 2] In Inequalities 1 and 2, nx1, nx2, ny1, ny2, nz1, and nz2 are the same in the detailed description.

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.

Abstract: An MRAM device includes a lower electrode, a blocking pattern on the lower electrode and including a binary metal boride in an amorphous state, a seed pattern on the blocking pattern and including a metal, an MTJ structure on the seed pattern, and an upper electrode on the MTJ structure.

Abstract: Disclosed herein are a device and a method for changing a setting value of electric power equipment. The method for changing a setting value of electric power equipment, includes transmitting a data request signal including a predetermined communication address and receiving a response signal corresponding to the data request signal from a slave communication module corresponding to the communication address using the serial communication network, determining whether communication between the master communication module and the slave communication module is established normally on the basis of the data request signal and the response signal, receiving, from the response signal, model information of a slave communication module in which a setting value change event occurs among slave communication modules of which communications are established normally, and discriminating and displaying, among the slave communication modules of which the communications are established normally, a slave communication module.

Abstract: An optical film includes a polarizing film including a polyolefin and a dichroic dye, a first photo-alignment layer on a side of the polarizing film, and a first liquid crystal layer on a side of the first photo-alignment layer, wherein the polarizing film and the first liquid crystal layer are in close contact with the first photo-alignment layer to provide a self-integrated structure. A method of manufacturing the same and a display device including the optical film are also provided.

Abstract: A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer between the lower substrate and the upper substrate, a color conversion layer on the liquid crystal layer, a first polarizing layer and a first phase difference layer between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer between a light source and the lower substrate, where the first phase difference layer has refractive indexes satisfying Relationship Equation 1, and the second phase difference layer has refractive indexes satisfying Relationship Equation 2.

Abstract: An organic light emitting diode device includes an organic light emitting display panel and a circular polarizing plate which includes a polarizer and a compensation film including a liquid crystal layer which includes a first surface and a second surface, and liquid crystals that tilt obliquely with respect to an extension direction of the first and second surfaces of the liquid crystal layer where tilt angles of the liquid crystals with respect to the extension direction of the liquid crystal layer become gradually larger from the first surface to the second surface of the liquid crystal layer in a thickness direction of the liquid crystal layer, and a maximum tilt angle of the liquid crystals with respect to the extension direction of the liquid crystal layer is determined based on a thickness direction phase delay generated in a thickness direction of the organic light emitting display panel.

Abstract: A method of synthesizing aluminum nitride, the method includes: preparing mixed powder containing 0.5 to 8 wt % of zinc powder, 0.01 to 2 wt % of magnesium powder, 0.01 to 1 wt % of silicon powder, 0.01 to 1 wt % of copper powder, and a balanced amount of aluminum powder; preparing a feedstock of the mixed powder blended and filled with thermoplastic organic binder, by pressured kneading the mixed powder and the thermoplastic organic binder; forming granules of the feedstock by crushing the feedstock or forming a molded body of the feedstock via a powder molding method; and debinding the granules or the molded body by heating under a nitrogen gas atmosphere, and then performing direct nitridation between aluminum and a nitrogen gas at a temperature higher than a debinding temperature.

Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

Abstract: A method for communicating with a power converter comprises initiating a communication sequence by sensing a first distortion of a sensed waveform during a discharge period of a first power transfer cycle of the power converter. The sensed waveform is proportional to a secondary current of the power converter. At a primary side of the power converter, a data bit is received from a secondary side of the power converter, by sensing a second distortion to represent one state of the data bit and sending an absence of the second distortion to represent another state of the data bit. The secondary distortion is applied to the secondary current during the discharge period of a subsequent power transfer cycle.

Abstract: A patterning method for fabricating a semiconductor device includes forming, for example sequentially forming, a lower buffer layer, a first channel semiconductor layer, and a capping insulating layer on a substrate, forming an opening to penetrate the capping insulating layer and the first channel semiconductor layer and expose a portion of the lower buffer layer, forming a second channel semiconductor layer to fill the opening and include a first portion protruding above the capping insulating layer, performing a first CMP process to remove at least a portion of the first portion, removing the capping insulating layer, and performing a second CMP process to remove at least a portion of a second portion of the second channel semiconductor layer protruding above the first channel semiconductor layer.