Abstract: An apparatus provides for the flexible adjustment of the position of the windows, as well as for the ability to change the light transmission area of a single window, without wasting too much space. The apparatus can transform windows into completely opaque walls, for example, to achieve partial or complete light blockage by moving several wall panels hidden inside the sill up and down to specified positions. A set of push plates inside the sill can be used to displace the wall panels horizontally and a set of lifting plates on the window frame can be used to move the wall panels up and down along a track. At the same time, after selecting the specified position, the corresponding position can have a stick to push the wall panel into the specified position and tighten and fix the wall panel in the desired position.

Abstract: A root-like expandable foundation pile is disclosed. It includes a movable drill, a foundation body, a number of foundation blade, a foundation cap and a stopper. The foundation blades are designed to have the warped portion protruding outward, so that they can expand outward by rotating the root-like expandable foundation pile in a direction different from that makes the root-like expandable foundation pile drilled into the soil. Extra bearing capacity can be available from the expanded foundation blades. Time and cost of installation can both be saved.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: An electronic device includes a chip and a circuit structure layer overlapped with the chip. The circuit structure layer includes a redistribution structure layer and an element structure layer, and the redistribution structure layer and the element structure layer are electrically connected to the chip. At least one of the redistribution structure layer and the element structure layer includes at least one opening, and in a normal direction of the electronic device, the at least one opening is overlapped with aside of the chip.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.

Abstract: An outdoor moving device includes a main body, a first energy storage device, a second energy storage device, and a connection assembly. The first energy storage device is capable of supplying power to the outdoor moving device and includes at least one first energy storage unit. The second energy storage device is capable of supplying power to the outdoor moving device and includes at least one second energy storage unit. The connection assembly is used for mounting the second energy storage device to the main body. The first energy storage device is detachably mounted to the main body, the first energy storage device is detachable from the main body to supply power to another power tool, the first energy storage unit includes a first positive electrode made of a first material, and the second energy storage unit includes a second positive electrode made of a second material.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.

Abstract: A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.

Abstract: The present disclosure discloses a manufacturing method of an electronic device. A seed layer is formed on a substrate. After patterning the seed layer to form a plurality of sub-seed layers and a plurality of conductive lines, a metal layer is formed on a plurality of the sub-seed layers. The sub-seed layers include a first sub-seed layer and a second sub-seed layer, and the first sub-seed layer and the second sub-seed layer are separated from each other.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: The present disclosure relates to a gateway device, wireless extender, method, device and medium. The gateway device comprises: a memory having an instruction stored thereon; and a processor configured to execute the instruction stored on the memory to cause the gateway device to execute the following operation: obtaining a schedule used to automatically turn on or turn off the radio transceiver function of the gateway device; and synchronizing the schedule to the wireless extender that is connected to the gateway device.

Abstract: An apparatus, method, and computer-readable recording medium provide a unified graphical user interface (GUI) to access devices in a wireless network according to an embodiment of the present disclosure is disclosed.

Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.

Abstract: A phase-change material (PCM) switching device is provided. The PCM switching device includes: a base dielectric layer over a semiconductor substrate; a heater element embedded in the base dielectric layer, the heater element comprising a first metal element and configured to generate heat in response to a current flowing therethrough; a self-aligned dielectric layer disposed on the heater element, wherein the self-aligned dielectric layer comprises one of an oxide of the first metal element and a nitride of the first metal element, and the self-aligned dielectric layer is horizontally aligned with the heater element; a PCM region disposed on the self-aligned dielectric layer, wherein the PCM region comprises a PCM operable to switch between an amorphous state and a crystalline state in response to the heat generated by the heater element; and two metal pads electrically connected to the PCM region.

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.

Abstract: A riding lawn mower, including: a frame; a seat; a walking assembly and a walking motor; a cutting assembly and a driving motor configured to drive the cutting assembly; a first energy storage device and a second energy storage device configured to supply power to at least one of the walking motor or the driving motor; a driving circuit to transfer power from at least one of the energy storage devices to at least one of the motors; and a charging circuit to charge at least one of the energy storage devices. The riding lawn mower further includes a first identification terminal engageable with the second energy storage device and a second identification terminal engageable with the first energy storage device; the riding lawn mower identifies a type of the energy storage devices through the identification terminals and selectively connects them to the driving circuit and the charging circuit.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: A cable assembly and a cable connection component are provided. The cable assembly includes a cable and a cable connection component. The cable connection component includes a first outer metal member, a second outer metal member and a holding component. The second outer metal member has an end for interlocking with an end of the first outer metal member. The holding component is disposed between the first outer metal member and the second outer metal member. The holding component includes two inner metal members that are fixed to each other by a fixing member. Each inner metal member includes a wire slot, the wire slot includes an end section and two branch sections, the two end sections jointly hold a portion of the cable in place, and each branch section of the two inner metal members jointly hold one of core wires of the cable in place.