Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: A system and method for enabling and supporting the use of a shared key code among multiple media gateway appliance subsystems. The system enables a user to specify the particular key code to be utilized, as well as the specific subsystems it will be associated with. The system and method will require a user to enter the shared key code as a prerequisite for accessing certain restricted content, functionality or information.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: An electrochemical cell and a method of manufacturing the electrochemical cell are provided. The method includes: spraying a precursor solution on an anode, the precursor solution including a metal salt dissolved in a solvent and the anode being at a temperature of 250° C. or greater; reacting the metal salt on the anode to form a buffer layer; and attaching a solid-state electrolyte to the buffer layer.

Abstract: A guiding system and a guiding method for ultrasound scanning operation are provided. The guiding system includes a handheld guiding device, a display device, an ultrasound scanning device, a prompting device, and a control host. When the handheld guiding device generates a first physical motion, the control host detects the first physical motion and generates navigation prompting information accordingly. The prompting device is suitable for presenting the navigation prompting information to guide the ultrasound scanning device to move to generate a second physical motion. The control host captures an ultrasound image via the ultrasound scanning device and sends the ultrasound image to the display device at a guiding end for display.

Abstract: The present disclosure relates to a method, a device, an extender, and a computer medium for automatically restoring connections. In this method, a wireless extender records the number of packets received from an access point within a first predetermined time; the wireless extender compares the recorded number with a predetermined threshold; and in response to determining that the recorded number is smaller than the predetermined threshold, the wireless extender restarts a WiFi module used for WiFi communication in the wireless extender to reestablish a WiFi connection with the access point. By automatically detecting the WiFi connection status and automatically triggering the restart of the WiFi module, it is possible to attempt to restore the WiFi connection without manual intervention, thereby improving the efficiency of network restoration.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: Electrochemical systems and methods involving gas generation and/or consumption are generally described. In some aspects, an electrochemical system (e.g., an electrochemical cell) including a first electrode (e.g., an intercalation electrode) and a second electrode (e.g., for gas generation and/or consumption) is provided. Generation and/or consumption of gaseous species may be accomplished in some instances via application of voltages, and in some instances generated gas can deform components of the electrochemical system (e.g., compliant surfaces). The electrode materials may be chosen such that gas generation and/or consumption can be accomplished reversibly, controllably, and/or with relatively small energy input. Such properties may be useful in fluid pumping and/ or valving applications.

Abstract: The present disclosure relates to the routing packets. A gateway establishes a DS-Lite tunnel with an AFTR device to work in a first mode. The gateway uses the DS-Lite tunnel to route IPv4 packets for IPv4 client devices in the first mode, and uses its IPv4 public network address to route IPv4 packets for IPv4 client devices in the second mode. In response to determining that the DS-Lite tunnel is unavailable, the gateway switches from the working mode in the first mode to the second mode. By switching the working mode, it is possible to continue to provide network services for IPv4 client devices without manual assistance and quickly alleviate the problem of DS-Lite tunnel failure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Abstract: An electronic apparatus for establishing a Dual-Stack Lite (DS-lite) tunnel is provided. The apparatus sends a request for an Internet Protocol (IP) address of a Domain Name System (DNS) server and a domain name of an Address Family Transition Router (AFTR) server to a Dynamic Host Configuration Protocol (DHCP) server using an IP address of the DHCP server, receives the IP address of the DNS server and the domain name of the AFTR server from the DHCP server in response to the request, sends a DNS query including the domain name of the AFTR server to the DNS server using the IP address of the DNS server. In response to the DNS query being successful, the apparatus receives an IP address of the AFTR server from the DNS server, and establishes the DS-lite tunnel between the apparatus and the AFTR server using the IP address of the AFTR server.

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A buffered negative electrode-electrolyte assembly includes: a porous negative electrode comprising a metal, a transition metal nitride, or a combination thereof; a solid-state electrolyte; and a buffer layer between the porous negative electrode and the solid-state electrolyte. The buffer layer comprising a buffer composition according to Formula (1) MmNnZzHhXx. The buffer composition has an electronic conductivity that is less than or equal to 1×10-2 times an electronic conductivity of the solid-state electrolyte, and the buffer composition has an ionic conductivity less than or equal to 1×10-6 times an ionic conductivity of the solid-state electrolyte.

Abstract: Compositions and processes for forming barrier coatings to prevent hydrogen embrittlement of an underlying material are disclosed. The coating can be made up of composite structures of metal and oxide that are alternately deposited onto a substrate for creating a multilayer coated substrate. Such multilayer coating can be incorporated into many contexts in which hydrogen permeation prevention is desired, such as pipelines and manufacture of advanced automotive steels. The process involves depositing a metal layer onto the substrate followed by a metal oxide layer thereon. The interface of the metal layer and the oxide layer can form space-charge zones that decrease hydrogen permeability therethrough.

Abstract: An outdoor moving device includes a main body, a first energy storage device, a second energy storage device, and a connection assembly. The first energy storage device is capable of supplying power to the outdoor moving device and includes at least one first energy storage unit. The second energy storage device is capable of supplying power to the outdoor moving device and includes at least one second energy storage unit. The connection assembly is used for mounting the second energy storage device to the main body. The first energy storage device is detachably mounted to the main body, the first energy storage device is detachable from the main body to supply power to another power tool, the first energy storage unit includes a first positive electrode made of a first material, and the second energy storage unit includes a second positive electrode made of a second material.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.