Abstract: Provided are a light emitting device capable of providing lenses or light emitting elements on a substrate in a suitable manner, and a method for manufacturing the light emitting device. A light emitting device of the present disclosure includes: a first substrate; a light emitting element provided on a lower surface of the first substrate; a lens provided on an upper surface of the first substrate; a first protrusion provided on the upper surface of the first substrate; and a first film provided on the upper surface of the first substrate, the first film including a first portion disposed on the lens or forming the lens, and a second portion disposed on the first protrusion or forming the first protrusion, in which a height of an uppermost portion of the first portion is equal to or less than a height of an uppermost portion of the second portion.

Abstract: There are provided a light emitting device capable of suitably forming light from a plurality of light emitting elements and a distance measuring device. A light emitting device according to the present disclosure includes a substrate, a plurality of light emitting elements provided at a first surface of the substrate, and a plurality of lenses provided at a second surface of the substrate. The plurality of lenses includes a first lens other than a spherical lens and an ellipsoidal lens.

Abstract: A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below or general formula (a0-2) shown below; and the acid generator component (B) includes an acid generator (B1) including a compound represented by general formula (b0-1) or (b0-2) shown below.

Abstract: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Q1 and Q2 represents single bond or divalent linking group, R3, R4 and R5 represent organic groups, and R4 and R5 may be bonded to each other to form a ring in combination with the sulfur atom, provided that —R3—S+(R4)(R5) has a total of only one aromatic ring or has no aromatic rings, V? represents a counter anion, A? represents an organic group containing anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mm+ has only one aromatic ring or has no aromatic rings.

Abstract: A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.

Abstract: A resist composition containing a base component (A) which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a copolymer (A1) having a structural unit (a0) containing a group represented by the following general formula (a0-1) or (a0-2), a structural unit (a11) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a polycyclic group, and a structural unit (a12) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a monocyclic group. Each of the groups —R3—S+(R4)(R5) and Mm+ in the formula has only one aromatic ring as a whole or has no aromatic ring.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y1 and Y2 represents a divalent linking group or a single bond; R?1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Abstract: A resist composition having excellent lithography properties, which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component (A) which exhibits changed solubility in a developing solution by the action of an acid, and the base material component (A) containing a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1); a method for forming a resist pattern using the resist composition; and a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), are disclosed.

Abstract: A resist composition for EUV exhibiting E0KrF greater than E0EUV, in which E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern. The resulting resist composition for EUV exhibits excellent lithography properties and pattern shape in EUV lithograph.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: A resist composition including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) and a structural unit (a6) which generates acid upon exposure, and a method of forming a resist pattern using the resist composition. In general formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Wa0 represents a single bond or an aliphatic hydrocarbon group having 1 to 5 carbon atoms and having a valency of (na0+1); Ra0 represents an aryl group of 4 to 16 carbon atoms which may have a substituent; and na0 represents 1 or 2.

Abstract: A positive resist composition including: a base component; and a sensitizer which a polymeric compound having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and at least one arm portion bonded to the core portion and represented by formula (1), and a polymeric compound having a core portion including a polymer having a molecular weight of 500 to 20,000 and at least one arm portion bonded to the core portion and represented by formula (1); and either the base component includes a resin component that generates acid upon exposure and exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an acid generator component including a compound that generates acid upon exposure: —(X)—Y??(1) in which X represents a divalent linking group having an acid dissociable group; and Y represents a polymer chain.

Abstract: The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] PX—Y)a ??(1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y1 and Y2 represents a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).

Abstract: A resist composition for use with EUV or EB including: a resin component (C) containing at least one type of atom selected from the group consisting of a fluorine atom and a silicon atom, an aromatic group, and a polarity conversion group that decomposes by action of base to increase the polarity; and a resin component (A) that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid (excluding the aforementioned resin component (C)), wherein an amount of a structural unit having the aforementioned aromatic group in the aforementioned resin component (C) is at least 20 mol %.