Abstract: Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S?) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.

Abstract: The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] P?X—Y)a ??(1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.

Abstract: A negative resist composition is used for either a first or second resist layer within a method of forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming the first resist layer on a substrate using a first resist composition, and then conducting selective exposure that forms a dense pattern in the first resist layer, and (ii) a step of forming the second resist layer on top of the first resist layer using a second resist composition, and then conducting selective exposure that forms a pattern in the second resist layer, wherein the negative resist composition is dissolved in an alcohol-based organic solvent, which functions as an organic solvent (D) that does not dissolve the first or second resist layer that contacts the resist layer formed from the negative resist composition.

Abstract: A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.

Abstract: A negative resist composition including: a fluorine-containing resin component (F) containing a structural unit (f1) represented by a general formula (f1-0) shown below, and a structural unit (f2) having an alkali-soluble group, an alkali-soluble resin component (A) excluding the fluorine-containing resin component (F), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C). [wherein, R7 represents a fluorinated alkyl group, and a represents either 0 or 1.

Abstract: A negative resist composition that includes an alkali-soluble resin component, an acid generator component that generates acid upon exposure, and a cross-linker component, wherein the alkali-soluble resin component is a copolymer that includes a structural unit containing an aliphatic cyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester that contains a hydroxyl group-containing aliphatic cyclic group, and the cross-linker component includes an alkylene urea-based cross-linker.

Abstract: There are provided a polymer compound which can form a resist pattern with excellent resolution, and a negative resist composition containing the polymer compound and a resist pattern-forming method thereof. The present invention is a polymer compound containing a structural unit (a0) represented by a general formula (a0-1) shown below. (wherein, R represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R0 represents an alkyl group containing a hydroxyl group.) Also, the present invention is a negative resist composition, including: an alkali soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent (C), wherein the alkali soluble resin component (A) contains a polymer compound (A1) having a structural unit (a0) represented by the general formula (a0-1) shown above.

Abstract: A negative resist composition that includes an alkali-soluble resin component, an acid generator component that generates acid upon exposure, and a cross-linker component, wherein the alkali-soluble resin component is a copolymer that includes a structural unit containing an aliphatic cyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester that contains a hydroxyl group-containing aliphatic cyclic group, and the cross-linker component includes an alkylene urea-based cross-linker.

Abstract: A negative resist composition and a method of forming a resist pattern that are capable of suppressing resist pattern swelling are provided. The negative resist composition includes an alkali-soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent component (C), wherein the alkali-soluble resin component (A) is a copolymer (A1) that includes a structural unit (a1) containing, within the main chain, an aliphatic cyclic group having a fluorinated hydroxyalkyl group, a structural unit (a2) derived from an acrylate ester which contains a hydroxyl group-containing chain-like or cyclic alkyl group and has a fluoroalkyl group or fluorine atom bonded to the ?-position, and a structural unit (a3) derived from an acrylate ester which contains an aliphatic cyclic group having a fluorinated hydroxyalkyl group and has a fluoroalkyl group or fluorine atom bonded to the ?-position.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A negative resist composition including: a fluorine-containing resin component (F) containing a structural unit (f1) represented by a general formula (f1-0) shown below, and a structural unit (f2) having an alkali-soluble group, an alkali-soluble resin component (A) excluding the fluorine-containing resin component (F), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C). [wherein, R7 represents a fluorinated alkyl group, and a represents either 0 or 1.

Abstract: A method for forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming a first resist layer on a substrate using a positive resist composition, and then conducting selective exposure, thereby forming a latent image of a dense pattern on the first resist layer, and (ii) a step of forming a second resist layer on top of the first resist layer using a negative resist composition, conducting selective exposure, and then developing the first resist layer and the second resist layer simultaneously, thereby exposing a portion of the latent image of the dense pattern, wherein as the negative resist composition, a negative resist composition dissolved in an organic solvent that does not dissolve the first resist layer is used.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A chemically amplified negative resist composition is provided in addition to a method of forming a resist pattern from which a desirable pattern shape can be obtained.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3).

Abstract: A negative resist composition is provided which is less likely to swell in an alkali developing solution. An alkali-developable negative resist composition is disclosed comprising a compound (A) which generates an acid upon exposure to radiation, and a resin component (B) which becomes insoluble in alkali under the action of an acid, wherein the component (B) is a resin component containing: (b1) a unit which becomes insoluble in an alkali solution as a result of the formation of a lactone under the action of an acid generated from the component (A), and (b2) a unit having an alcoholic hydroxyl group.