Abstract: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

Abstract: A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below or general formula (a0-2) shown below; and the acid generator component (B) includes an acid generator (B1) including a compound represented by general formula (b0-1) or (b0-2) shown below:

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a0) containing an acid-dissociable, dissolution-inhibiting group, and the acid-dissociable, dissolution-inhibiting group has a 1,3-dioxole skeleton.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.

Abstract: The present invention is related to a resist composition for EUV exhibiting E0KrF greater than E0EUV, wherein E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including: applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern. According to the present invention, a resist composition for EUV exhibiting excellent lithography properties and pattern shape in EUV lithography, a method of producing the resist composition for EUV, and a method of forming a resist pattern that uses the resist composition for EUV can be provided.

Abstract: A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition including a base component that generates acid upon exposure and also exhibits increased polarity by action of acid, the base component including a polymeric compound having a structural unit that generates acid upon exposure; a structural unit derived from an acrylate ester, in which a hydrogen atom bonded to a carbon atom on the ?-position may be substituted with a substituent, and also includes an acid decomposable group that exhibits increased polarity by action of acid; and a structural unit represented by a particular general formula.

Abstract: A positive resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under action of acid; and a sensitizer (G), wherein the sensitizer (G) is at least one compound selected from the group consisting of a polymeric compound (G1) having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and also at least one arm portion that is bonded to the core portion and is represented by general formula (1) shown below, and a polymeric compound (G2) having a core portion that includes a polymer having a molecular weight of 500 or more and 20,000 or less and also at least one arm portion that is bonded to the core portion and is represented by general formula (1) shown below; and either the base component (A) includes a resin component (A1) that generates acid upon exposure and also exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an a

Abstract: Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S?) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.

Abstract: A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.

Abstract: A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.

Abstract: A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a0) containing an acid-dissociable, dissolution-inhibiting group, and the acid-dissociable, dissolution-inhibiting group has a 1,3-dioxole skeleton.

Abstract: There are provided a polymer compound which can form a resist pattern with excellent resolution, and a negative resist composition containing the polymer compound and a resist pattern-forming method thereof. The present invention is a polymer compound containing a structural unit (a0) represented by a general formula (a0-1) shown below. (wherein, R represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R0 represents an alkyl group containing a hydroxyl group.) Also, the present invention is a negative resist composition, including: an alkali soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent (C), wherein the alkali soluble resin component (A) contains a polymer compound (A1) having a structural unit (a0) represented by the general formula (a0-1) shown above.

Abstract: The positive resist composition including a base material component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the positive resist composition characterized in that in those cases where a resist film is formed on a substrate using the positive resist composition and is then subjected to a selective exposure and developing to form a hole pattern, followed by a bake treatment, a bake treatment temperature (Tf), at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 100° C.

Abstract: A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.

Abstract: A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.

Abstract: A chemically amplified negative resist composition is provided in addition to a method of forming a resist pattern from which a desirable pattern shape can be obtained.

Abstract: A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.