Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: A printed wiring board includes a conductor layer including a pad, a first resin insulating layer laminated on the conductor layer, a first conductor layer formed on the first resin insulating layer and including a first seed layer and a first electrolytic plating layer, a second resin insulating layer laminated on the first insulating layer such that the second resin insulating layer is covering the first conductor layer, and a second conductor layer formed on the second resin insulating layer and including a second seed layer and a second electrolytic plating layer. The first conductor layer is formed such that the first seed layer is an electroless plating layer and the first electrolytic plating layer formed on the first seed layer, and the second conductor layer is formed such that a second seed layer is a sputtering layer and the second electrolytic plating layer formed on the second seed layer.

Abstract: Provided is a method for producing SiC single crystal substrate including placing a SiC single crystal serving as a seed crystal and a SiC powder layer in a container in a state in which the SiC single crystal and the SiC powder layer are in contact with each other and performing a heat treatment by placing the container in an effective working zone of a firing furnace controlled to a temperature range within ±50° C. of a preset temperature to grow a SiC single crystal on the seed crystal.

Abstract: There is provided an aqueous pigment dispersion that makes it possible to prepare an environmentally conscious aqueous inkjet ink in which a pigment is finely dispersed in a stable manner and at a high level and which is capable of recording an image having excellent durability, glossiness, color developability, and adhesiveness to various printing substrates. The aqueous pigment dispersion is an aqueous pigment dispersion containing a pigment, water, a water-soluble organic solvent, and a polymeric dispersant that disperses the pigment, wherein the polymeric dispersant is a polymer including a constitutional unit (i) derived from at least one of (meth)acrylic acid and itaconic acid, and a constituent unit (ii) derived from a (meth)acrylate derived from biological material, such as ethyl (meth)acrylate, having an acid value of 30 to 250 mgKOH/g, having a number average molecular weight of 1,000 to 30,000, and having a polydispersity index (weight average molecular weight/number average molecular weight) of 2.

Abstract: A printed wiring board includes a first conductor layer, a resin insulating layer having an opening, a second conductor layer including a seed layer and an electrolytic plating layer formed on the seed layer, and a via conductor including the seed layer and the electrolytic plating layer and connecting the first conductor and second conductor layers. The seed layer has a first portion on the surface of the insulating layer, a second portion on an inner wall surface in the opening of the insulating layer, and a third portion on a portion of the first conductor layer exposed by the opening of the insulating layer such that the first portion is thicker than the second portion and the third portion, the second portion has a first film and a second film electrically connected to the first film, and a portion of the first film is formed on the second film.

Abstract: A printed wiring board includes a first conductor layer, a resin insulating layer laminated on the first conductor layer and including resin material and inorganic particles, a second conductor layer formed on a first surface of the insulating layer such that the first conductor layer is facing a second surface of the insulating layer, and a via conductor formed in an opening extending through the insulating layer and connecting the first and second conductor layers. The insulating layer is formed such that the inorganic particles include first inorganic particles partially embedded in the resin and second inorganic particles completely embedded in the resin, the first inorganic particles have first portions protruding from the resin and second portions embedded in the resin respectively, and the first surface of the resin insulating layer includes a surface of the resin and surfaces of the first portions exposed from the surface of the resin.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: A composite substrate includes: a base substrate and an ?-Ga2O3 crystal film that is provided on the base substrate, has a thickness of 10 ?m or more, and has at least one alkali metal element content of 1.2×1015 atoms/cm3 or more and 1.0×1018 atoms/cm3 or less.

Abstract: A film forming apparatus includes a chamber, a susceptor placed in the chamber, an electrode placed inside the susceptor, a conductive shower head arranged above the susceptor apart from each other, an annular exhaust duct arranged so as to surround the outer edge of the susceptor, and an AC power supply that supplies AC power to the electrode, wherein the annular exhaust duct has an exhaust gas introduction member having an exhaust gas inlet and an exhaust gas discharge member having an exhaust gas outlet, the exhaust gas introduction member is arranged on the susceptor side in the radial direction of the susceptor and is made of an insulating material, and the exhaust gas discharge member is arranged on the side opposite to the susceptor side in the radial direction of the susceptor, and is made of a conductive material.

Abstract: A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of ?-Ga2O3 or an ?-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 ?m. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 ?m or greater and 64 ?m or less.

Abstract: A gas supply unit is disclosed. Exemplary gas supply unit includes an upper plate provided with a plurality of injection holes, the plurality of injection holes comprising a center injection hole and a plurality of outer injection holes; a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; a first gas line fluidly coupled to the center injection hole; and a plurality of second gas lines fluidly coupled to the plurality of outer injection holes. The plurality of outer injection holes is arranged concentrically around the center injection hole. The divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

Abstract: A gallium oxide single crystal particle according to the present invention is an ?-Ga2O3 single crystal particle and has a diameter and a height that exceed 100 ?m.

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

Abstract: A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×1016 atoms/cm3 to 1×1019 atoms/cm3 inclusive and a concentration of Al is from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 inclusive.

Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

Abstract: An apparatus for processing a substrate may comprise a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operational connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.

Abstract: A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Abstract: Provided is an ?-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm?1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm?1 or less.