Abstract: An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.

Abstract: There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.

Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

Abstract: A method of producing hexagonal plate-like zinc oxide particles having a sharp particle size distribution (i.e., a relatively uniform particle size) at a high weight yield and a high percent yield is provided. The method of producing hexagonal plate-like zinc oxide particles of the present invention comprises mixing by stirring an aqueous hexamethylenetetramine (HMT) solution, a solution of an anionic surfactant in a water-insoluble organic solvent, and optionally water to form a microemulsion containing an aqueous phase of an aqueous hexamethylenetetramine solution having a molar concentration of 0.05 M or more; dropwise adding an aqueous zinc salt solution to the microemulsion; and heating the microemulsion containing the aqueous zinc salt solution to a reaction temperature of 80° C. or more without using any autoclave to form hexagonal plate-like zinc oxide particles.

Abstract: A lactase preparation includes lactase and has a lactase activity of 4,000 NLU/g or more according to the FCC IV method, wherein the lactase originates from a lactase gene of yeast, and wherein the lactase preparation has an arylsulfatase activity of 0.1% or less based on the lactase activity, in which the arylsulfatase activity (unit: U/g) is determined and calculated.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

Abstract: In an iron golf club head with a face portion and a neck portion integrally molded by forging, the iron golf club head is made of an iron steel material at least containing 0.30% by weight or less of carbon and 0.0005% by weight to 0.003% by weight of boron. The face portion has been subjected to quenching processing.

Abstract: Disclosed is a substrate processing method including: placing a plurality of substrates on a rotary table in a processing container; and performing a processing on the substrates while rotating the rotary table. A dummy workpiece is disposed in a gap between the substrates placed on the rotary table.

Abstract: Disclosed is a plasma processing apparatus including: a processing container that includes a bottom portion and a sidewall and defines a processing space; a microwave generator that generates microwaves; and a dielectric window attached to the sidewall of the processing container. The dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space. Corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves. A distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion.

Abstract: An object of the present invention is to provide a lithium secondary battery cathode which can more improve characteristics of the battery. The cathode of the present invention includes an electroconductive cathode current collector, a plurality of plate-like particle formed of a cathode active material, and a binder containing microparticles formed of the cathode active material and being smaller than the plate-like particles. The plate-like particles are formed so as to have an aspect ratio of 4 to 50. The plate-like particles are arranged such that the particles cover the surface of the cathode current collector surface at a percent area of 85 to 98%. The binder is disposed so as to intervene between two adjacent plate-like particles.

Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 ?m. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 ?m or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate.

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract: The present invention provides a zinc oxide powder that enables a high degree of orientation, and highly uniform dispersion of an additive substance, to be simultaneously achieved in a green body or a sintered body. The zinc oxide powder of the present invention comprises a plurality of plate-like zinc oxide particles and has a volume-based D50 average particle diameter of 1 to 5 ?m and a specific surface area of 1 to 5 m2/g. The zinc oxide powder has a degree of orientation of the (002) plane of 40% or greater when two-dimensionally arrayed into a monolayer on a substrate.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.