Abstract: A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Abstract: Provided is an ?-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm?1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm?1 or less.

Abstract: An ?-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

Abstract: An ?- or ?-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.

Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, or a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3.

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 ?m.

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

Abstract: Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

Abstract: Provided are a novel isoamylase improved in optimum temperature, and more specifically, improved in heat resistance, and a process for producing the isoamylase. An isoamylase having at least one amino acid mutation selected from the group consisting of D268A, M277I, A549P, A554P and A580T in an isoamylase consisting of an amino acid sequence represented by SEQ ID No: 1 or an isoamylase consisting of the amino acid sequence represented by SEQ ID No: 1 and having deletion, substitution or insertion of one to several amino acid residues.

Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.

Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

Abstract: Provided are a novel isoamylase improved in optimum temperature, and more specifically, improved in heat resistance, and a process for producing the isoamylase. An isoamylase having at least one amino acid mutation selected from the group consisting of D268A, M277I, A549P, A554P and A580T in an isoamylase consisting of an amino acid sequence represented by SEQ ID No: 1 or an isoamylase consisting of the amino acid sequence represented by SEQ ID No: 1 and having deletion, substitution or insertion of one to several amino acid residues.

Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.

Abstract: Provided is a method for manufacturing a fermented milk product, including sequentially performing a first step of mixing raw material milk and lactic acid bacteria to obtain a mixed liquid, and a second step of fermenting the mixed liquid, characterized by performing a step of adding a Paenibacillus-derived protease to the raw material milk and/or the mixed liquid (protease addition step) before the second step is completed. According to this manufacturing method, the hardness of the fermented milk product can be adjusted to a desired value while original smoothness of the fermented milk product is maintained.

Abstract: There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.