Patents by Inventor Jyu-Horng Shieh
Jyu-Horng Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980040Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.Type: GrantFiled: June 14, 2021Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Yen Peng, Tsung-Hsien Chang, Yu-Shu Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Chung-Te Lin
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Patent number: 11944017Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.Type: GrantFiled: May 5, 2023Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tai-Yen Peng, Yu-Shu Chen, Chien Chung Huang, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
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Publication number: 20240099150Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
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Patent number: 11923202Abstract: The present disclosure, in some embodiments, relates to an integrated circuit structure. The integrated circuit structure includes a substrate and a hard mask over the substrate. The hard mask has sidewalls that form a first opening and a second opening exposing an upper surface of the substrate. A block mask is arranged on the hard mask and is set back from the sidewalls of the hard mask. Spacers are disposed over the block mask and have sidewalls that define a spacer opening exposing an upper surface of the block mask. The block mask extends from directly below the spacers to laterally past the sidewalls of the spacers.Type: GrantFiled: July 27, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ying Lee, Jyu-Horng Shieh
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Publication number: 20240071722Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Inventors: Sheng-Liang Pan, Bing-Hung Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen, Syun-Ming Jang, Jack Kuo-Ping Kuo
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Publication number: 20240019787Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.Type: ApplicationFiled: July 19, 2023Publication date: January 18, 2024Inventors: Ru-Gun LIU, Huicheng Chang, Chia-Cheng Chen, Jyu-Horng Shieh, Liang-Yin Chen, Shu-Huei Suen, Wei-Liang Lin, Ya Hui Chang, Yi-Nien Su, Yung-Sung Yen, Chia-Fong Chang, Ya-Wen Yeh, Yu-Tien Shen
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Publication number: 20240023457Abstract: An integrated circuit includes a metallization pattern having first and second conductive features, an etch stop layer over the metallization pattern, a memory device, a bottom electrode via, a third conductive feature, and a dielectric feature. The etch stop layer has first and second portions over the first and second conductive features, respectively. The bottom electrode via is in the first portion of the etch stop layer and electrically connecting the memory device over the first portion of the etch stop layer to the first conductive feature. The third conductive feature is in the second portion of the etch stop layer and electrically connected to the second conductive feature. The dielectric feature is between the first and second portions of the etch stop layer and in contact with sidewalls of the first and second portions of the etch stop layer.Type: ApplicationFiled: July 28, 2023Publication date: January 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen PENG, Chien-Chung HUANG, Yu-Shu CHEN, Sin-Yi YANG, Chen-Jung WANG, Han-Ting LIN, Chih-Yuan TING, Jyu-Horng SHIEH, Hui-Hsien WEI
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Patent number: 11856865Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.Type: GrantFiled: July 20, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
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Patent number: 11854820Abstract: A method includes forming a first layer on a substrate; forming a first plurality of trenches in the first layer by a patterning process; and forming a second plurality of trenches in the first layer by another patterning process, resulting in combined trench patterns in the first layer. A first trench of the second plurality connects two trenches of the first plurality. The method further includes forming dielectric spacer features on sidewalls of the combined trench patterns. A space between two opposing sidewalls of the first trench is completely filled by the dielectric spacer features and another space between two opposing sidewalls of one of the two trenches is partially filled by the dielectric spacer features.Type: GrantFiled: May 22, 2020Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ru-Gun Liu, Cheng-Hsiung Tsai, Chung-Ju Lee, Chih-Ming Lai, Chia-Ying Lee, Jyu-Horng Shieh, Ken-Hsien Hsieh, Ming-Feng Shieh, Shau-Lin Shue, Shih-Ming Chang, Tien-I Bao, Tsai-Sheng Gau
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Patent number: 11854766Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.Type: GrantFiled: July 20, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Liang Pan, Bing-Hung Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen, Syun-Ming Jang, Jack Kuo-Ping Kuo
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Publication number: 20230360966Abstract: Middle-of-line (MOL) interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a device-level contact disposed in a first insulator layer and a ruthenium structure disposed in a second insulator layer disposed over the first insulator layer. The device-level contact physically contacts an integrated circuit feature, and the ruthenium structure physically contacts the device-level contact. An air gap separates sidewalls of the ruthenium structure from the second insulator layer. A top surface of the ruthenium structure is lower than a top surface of the second insulator layer. A via disposed in a third insulator layer extends below the top surface of the second insulator layer to physically contact the ruthenium structure. A remainder of a dummy contact spacer layer may separate the first insulator layer and the second insulator layer.Type: ApplicationFiled: July 21, 2023Publication date: November 9, 2023Inventors: Yi-Nien Su, Jyu-Horng Shieh
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Publication number: 20230343636Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.Type: ApplicationFiled: June 29, 2023Publication date: October 26, 2023Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
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Patent number: 11800812Abstract: An integrated circuit includes a dielectric layer, a memory device, and a resistor. The memory device includes a bottom electrode via, a bottom electrode, a resistance switching element, and a top electrode. The bottom electrode via is in the dielectric layer. The dielectric layer has a first portion extending along sidewalls of the bottom electrode via, a second portion extending laterally from the first portion, and a third portion. The bottom electrode is over the bottom electrode via. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element. The resistor is over the third portion of the dielectric layer. A thickness of the third portion of the dielectric layer is greater than a thickness of the second portion of the dielectric layer.Type: GrantFiled: March 7, 2022Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Chien-Chung Huang, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Chih-Yuan Ting, Jyu-Horng Shieh, Hui-Hsien Wei
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Patent number: 11796922Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.Type: GrantFiled: September 30, 2019Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ru-Gun Liu, Huicheng Chang, Chia-Cheng Chen, Jyu-Horng Shieh, Liang-Yin Chen, Shu-Huei Suen, Wei-Liang Lin, Ya Hui Chang, Yi-Nien Su, Yung-Sung Yen, Chia-Fong Chang, Ya-Wen Yeh, Yu-Tien Shen
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Patent number: 11784056Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.Type: GrantFiled: August 9, 2022Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Wei Huang, Yu-Yu Chen, Jyu-Horng Shieh
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Publication number: 20230282488Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.Type: ApplicationFiled: May 12, 2023Publication date: September 7, 2023Inventors: Kuan-Wei Huang, Yu-Yu Chen, Jyu-Horng Shieh
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Publication number: 20230276715Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Inventors: TAI-YEN PENG, YU-SHU CHEN, CHIEN CHUNG HUANG, SIN-YI YANG, CHEN-JUNG WANG, HAN-TING LIN, JYU-HORNG SHIEH, QIANG FU
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Patent number: 11735469Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.Type: GrantFiled: May 2, 2022Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
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Publication number: 20230263068Abstract: A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.Type: ApplicationFiled: April 19, 2023Publication date: August 17, 2023Inventors: Tai-Yen Peng, Sin-Yi Yang, Chen-Jung Wang, Yu-Shu Chen, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Chih-Yuan Ting
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Patent number: 11710657Abstract: Middle-of-line (MOL) interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a device-level contact disposed in a first insulator layer and a ruthenium structure disposed in a second insulator layer disposed over the first insulator layer. The device-level contact physically contacts an integrated circuit feature, and the ruthenium structure physically contacts the device-level contact. An air gap separates sidewalls of the ruthenium structure from the second insulator layer. A top surface of the ruthenium structure is lower than a top surface of the second insulator layer. A via disposed in a third insulator layer extends below the top surface of the second insulator layer to physically contact the ruthenium structure. A remainder of a dummy contact spacer layer may separate the first insulator layer and the second insulator layer.Type: GrantFiled: January 12, 2021Date of Patent: July 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Nien Su, Jyu-Horng Shieh