Patents by Inventor Jyu-Horng Shieh
Jyu-Horng Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230210028Abstract: An IC structure comprises a substrate, a first dielectric structure, a second dielectric structure, a first via structure, and a memory cell structure. The substrate comprises a memory region and a logic region. The first dielectric structure is over the memory region. The second dielectric structure laterally extends from the first dielectric structure to over the logic region. The second dielectric structure has a thickness less than a thickness of the first dielectric structure. The first via structure extends through the first dielectric structure. A top segment of the first via structure is higher than a top surface of the first dielectric structure. The first memory cell structure is over the first via structure.Type: ApplicationFiled: February 17, 2023Publication date: June 29, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen PENG, Hui-Hsien WEI, Wei-Chih WEN, Pin-Ren DAI, Chien-Min LEE, Han-Ting TSAI, Jyu-Horng SHIEH, Chung-Te LIN
-
Patent number: 11683991Abstract: The present disclosure provides a method for manufacturing semiconductor structure, including forming an insulation layer, forming a first via trench in the insulation layer, forming a barrier layer in the first via trench, forming a bottom electrode via in the first via trench, forming a magnetic tunneling junction (MTJ) layer above the bottom electrode via, and performing an ion beam etching operation, including patterning the MTJ layer to form an MTJ and removing a portion of the insulation layer from a top surface.Type: GrantFiled: November 24, 2020Date of Patent: June 20, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tai-Yen Peng, Yu-Shu Chen, Chien Chung Huang, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
-
Patent number: 11676821Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.Type: GrantFiled: September 11, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Wei Huang, Yu-Yu Chen, Jyu-Horng Shieh
-
Patent number: 11665971Abstract: A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.Type: GrantFiled: August 23, 2021Date of Patent: May 30, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Yen Peng, Sin-Yi Yang, Chen-Jung Wang, Yu-Shu Chen, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Chih-Yuan Ting
-
Publication number: 20230155001Abstract: A method includes forming a transistor comprising a source/drain region and a gate electrode, forming a source/drain contact plug over and electrically connecting to the source/drain region, forming a first inter-layer dielectric over the source/drain contact plug, forming an etch stop layer over the first inter-layer dielectric, etching the etch stop layer to form a first via opening, forming a second inter-layer dielectric over the first inter-layer dielectric, performing an etching process, so that the second inter-layer dielectric is etched to form a trench, and the first via opening in the etch stop layer is extended into the first inter-layer dielectric to reveal the source/drain contact plug, and filling the trench and the first via opening in common processes to form a metal line and a via, respectively.Type: ApplicationFiled: February 16, 2022Publication date: May 18, 2023Inventors: Chien-Han Chen, Shih-Yu Chang, Chien-Chih Chiu, Huang-Ming Chen, Jyu-Horng Shieh
-
Patent number: 11588107Abstract: An IC structure comprises a substrate, a first material layer, a second material layer, a first via structure, and a memory cell structure. The substrate comprises a memory region and a logic region. The first material layer is disposed on the memory region and the logic region. The second material layer is disposed on the first material layer only at the memory region. The first via structure formed in the first material layer and the second material layer. The memory cell structure is over the first via structure.Type: GrantFiled: July 7, 2021Date of Patent: February 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Hui-Hsien Wei, Wei-Chih Wen, Pin-Ren Dai, Chien-Min Lee, Han-Ting Tsai, Jyu-Horng Shieh, Chung-Te Lin
-
Publication number: 20220384243Abstract: Middle-of-line (MOL) interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a device-level contact disposed in a first insulator layer and a ruthenium structure disposed in a second insulator layer disposed over the first insulator layer. The device-level contact physically contacts an integrated circuit feature, and the ruthenium structure physically contacts the device-level contact. An air gap separates sidewalls of the ruthenium structure from the second insulator layer. A top surface of the ruthenium structure is lower than a top surface of the second insulator layer. A via disposed in a third insulator layer extends below the top surface of the second insulator layer to physically contact the ruthenium structure. A remainder of a dummy contact spacer layer may separate the first insulator layer and the second insulator layer.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Inventors: Yi-Nien Su, Jyu-Horng Shieh
-
Publication number: 20220384201Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Inventors: Kuan-Wei Huang, Yu-Yu Chen, Jyu-Horng Shieh
-
Publication number: 20220384241Abstract: An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Inventors: KUAN-WEI HUANG, YI-NIEN SU, YU-YU CHEN, JYU-HORNG SHIEH
-
Publication number: 20220367794Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.Type: ApplicationFiled: July 20, 2022Publication date: November 17, 2022Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
-
Publication number: 20220359274Abstract: A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Chung-Wen Wu, Chih-Yuan Ting, Jyu-Horng Shieh
-
Publication number: 20220359222Abstract: The present disclosure, in some embodiments, relates to an integrated circuit structure. The integrated circuit structure includes a substrate and a hard mask over the substrate. The hard mask has sidewalls that form a first opening and a second opening exposing an upper surface of the substrate. A block mask is arranged on the hard mask and is set back from the sidewalls of the hard mask. Spacers are disposed over the block mask and have sidewalls that define a spacer opening exposing an upper surface of the block mask. The block mask extends from directly below the spacers to laterally past the sidewalls of the spacers.Type: ApplicationFiled: July 27, 2022Publication date: November 10, 2022Inventors: Chia-Ying Lee, Jyu-Horng Shieh
-
Publication number: 20220359158Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Sheng-Liang Pan, Bing-Hung Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen, Syun-Ming Jang, Jack Kuo-Ping Kuo
-
Patent number: 11482426Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated circuit. The method includes forming a hard mask over a dielectric layer of a substrate. A blocking layer is formed on the hard mask and spacers are formed over the blocking layer. The spacers laterally straddle opposing edges of the blocking layer. The hard mask is etched according to the spacers and the blocking layer. The dielectric layer is etched according to the hard mask.Type: GrantFiled: January 20, 2021Date of Patent: October 25, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ying Lee, Jyu-Horng Shieh
-
Patent number: 11456210Abstract: An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.Type: GrantFiled: October 14, 2020Date of Patent: September 27, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Kuan-Wei Huang, Yi-Nien Su, Yu-Yu Chen, Jyu-Horng Shieh
-
Publication number: 20220262674Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
-
Patent number: 11411176Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.Type: GrantFiled: December 14, 2020Date of Patent: August 9, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
-
Patent number: 11404245Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.Type: GrantFiled: November 1, 2018Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Liang Pan, Bing-Hung Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen, Syun-Ming Jang, Jack Kuo-Ping Kuo
-
Patent number: 11398405Abstract: A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.Type: GrantFiled: September 12, 2019Date of Patent: July 26, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Wen Wu, Chih-Yuan Ting, Jyu-Horng Shieh
-
Publication number: 20220190237Abstract: An integrated circuit includes a dielectric layer, a memory device, and a resistor. The memory device includes a bottom electrode via, a bottom electrode, a resistance switching element, and a top electrode. The bottom electrode via is in the dielectric layer. The dielectric layer has a first portion extending along sidewalls of the bottom electrode via, a second portion extending laterally from the first portion, and a third portion. The bottom electrode is over the bottom electrode via. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element. The resistor is over the third portion of the dielectric layer. A thickness of the third portion of the dielectric layer is greater than a thickness of the second portion of the dielectric layer.Type: ApplicationFiled: March 7, 2022Publication date: June 16, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen PENG, Chien-Chung HUANG, Yu-Shu CHEN, Sin-Yi YANG, Chen-Jung WANG, Han-Ting LIN, Chih-Yuan TING, Jyu-Horng SHIEH, Hui-Hsien WEI