Abstract: Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes an n-type layer, a multiple quantum well layer, and a p-type ion doping layer which are disposed in sequence. The p-type ion doping layer includes an activation region and a passivation region, and the activation region is an oxygen doping region. By selectively activating the p-type ion doping layer, a passivation region at an edge of a light-emitting unit and a passivation region under the first electrode are formed, so that uniformity of luminous exitance of a device may be improved, and current crosstalk in the p-type layer may be avoided without etching and filling insulating medium or cutting isolation channels between the light-emitting units, thereby simplifying a manufacturing process of the device, and achieving a more uniform luminous exitance and higher light extraction rate of the semiconductor device.

Abstract: A semiconductor structure includes a substrate, a first semiconductor layer, a second semiconductor layer and a p-type ion doping layer sequentially disposed, the p-type ion doping layer includes an activation region and a passivation region enclosing the activation region, and the activation region is an oxygen-doped region. Hydrogen doped in the p-type ion doping layer can be replaced by low-temperature annealing after a process of implementing oxygen ion-implantation, so as to improve activation efficiency of the p-type ion doping layer; the activation region in a gate electrode region and the passivation region in an non-gate electrode region are formed by using a method for selectively activating the p-type ion doping layer, avoiding etching of the p-type ion doping layer, and thus avoiding etching losses; and a plurality of patterned activation regions are obtained by selectively activating on a same substrate, which facilitates batch preparation of enhancement mode semiconductor devices.

Abstract: The present invention provides four-particle electrophoretic displays with improved driving methods to achieve better color separation between adjacent pixel electrodes. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: The present disclosure provides a semiconductor structure, including: a substrate structure; an epitaxial structure on the substrate structure, where the epitaxial structure includes at least one heterojunction structure sequentially stacked in a direction away from the substrate structure; each of the at least one heterojunction structure includes a channel layer and a barrier layer, the epitaxial structure includes a gate region, and in each of the at least one heterojunction structure, a part of the barrier layer corresponding to the gate region is removed to form a hole; a gate electrode on the gate region, where the gate electrode fills the hole, and surrounds the channel layer; and a source electrode and a drain electrode respectively at two sides of the gate electrode.

Abstract: The present disclosure provides a carbon-encapsulated lithium manganese iron phosphate material having a composition of: LiFe1-x-yMnxMyPO4@C, where M includes at least one of Mg, V, Zr, Nb, In, Al, Co and Ni, 0.5?x?0.8, 0<y?0.02, and C is encapsulated carbon. The material has a secondary gradation structure with tightly bound material gradation, high compaction density, and excellent electrochemical performance. The present disclosure further provides a method for preparing a carbon-encapsulated lithium manganese iron phosphate material, which has a simple process flow and is suitable for application in large-scale industrial production. The present disclosure further provides a lithium ion battery in which the carbon-encapsulated lithium manganese iron phosphate material is applied.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a silicon substrate having several through-silicon-vias therein; a first semiconductor layer located in each through-silicon-via and on the silicon substrate, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer, where a conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, a material of the first semiconductor layer a group III nitride, a material of the active layer a group III nitride, and a material of the second semiconductor layer include a group III nitride.

Abstract: A semiconductor structure, comprising: a semiconductor substrate, a heterojunction, an in-situ insulating layer and a transition layer, which are arranged in sequence from bottom to top; a groove, passing through the in-situ insulating layer and the transition layer; and a P-type semiconductor layer, disposed in the groove and in a gate region on the transition layer, wherein the P-type semiconductor layer does not fully fill the groove. A method of manufacturing semiconductor structure is further disclosed.

Abstract: A USB protocol-based IP infringement identification method for USB devices, including the following steps: S1, connecting an infringement identification device at a peer side of the USB host to be tested; S2, the USB host to be tested entering compliance mode; S3, the infringement identification device sending an X.LFPS file to the USB host to be tested; S4, upon the USB host to be tested receiving the X.LFPS file, the USB host to be tested sending IP copyright information to the infringement identification device; S5, determining whether the USB host to be tested infringes the IP. The infringement identification of the USB device to be tested is performed by using the compliance mode specified in the USB protocol, which is more stable, reliable and can also save costs.

Abstract: This application provides a semiconductor structure and substrate thereof, a method of manufacturing the semiconductor structure and substrate thereof. The substrate includes a plurality of unit areas, each of the unit areas includes at least two subunit areas, each of the subunit areas is provided with a groove, the groove is opened from a back side of the substrate; and in one of the unit areas, preset opening ratios of the subunit areas are different. A light-emitting layer is grown on a front side of the substrate; and in one of the unit areas, light-emitting wavelengths of the light-emitting layer in the subunit areas are different.

Abstract: A vehicle power management system and a power management method thereof are provided. The power management method includes: determining, by a microcontroller, whether or not a voltage of an ignition-off signal is less than a voltage threshold when the microcontroller receives the ignition-off signal; stopping a vehicle power supply from charging a backup battery, and using the vehicle power supply to charge a back-end load; activating a counter of the microcontroller; stopping the vehicle power supply from charging the back-end load, and using the backup battery to charge the back-end load when a counting time of the counter reaches a first time threshold; sending, by the microcontroller, the ignition-off signal to the back-end load when the counting time of the counter reaches a second time threshold; and stopping the backup battery from charging the back-end load when the counting time of the counter reaches a third time threshold.

Abstract: An imaging system, optionally an intra-oral camera, includes a blue light source and a barrier filter over a camera sensor. Optionally, the imaging system can also take white light images. Optionally, the system includes positively charged nanoparticles with fluorescein. The fluorescent nanoparticles can be identified on an image of a tooth by machine vision or machine learning algorithms on a pixel level basis. Either white light or fluorescent images can be used, with machine learning or artificial intelligence algorithms, to score the lesions. However, the white light image is not useful for determining whether lesions, particularly ICDAS 0-2 lesions, are active or inactive. A fluorescent image, with the fluorescent nanoparticles, can be used to detect and score active lesions. Optionally using a white light image and a fluorescent image together allows for all lesions, active and inactive, to be located and scored, and for their activity to be determined.

Abstract: The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.

Abstract: Disclosed are a manufacturing method for an epitaxial substrate, an epitaxial substrate, and a semiconductor structure. The manufacturing method includes: patterning a substrate to form a trench; manufacturing a transition layer in the trench, and performing crystal plane transformation processing on the transition layer based on a shape of the trench, so as to transform the transition layer into a single crystal layer, where a surface, away from the substrate, of the single crystal layer is a (111) crystal plane. Based on different shapes of the trench on the substrate, the transition layer is controlled to obtain a single crystal layer of a specific crystal plane after the crystal plane transformation processing, and a surface, away from the substrate, of the single crystal layer, is a (111) crystal plane. The (111) crystal plane of the single crystal layer facilitates subsequent epitaxial manufacturing of a semiconductor structure.

Abstract: An electro-acoustical transducer device is disclosed, which includes: a hollow disk body that generally defines an axis of propagation, the hollow disk body comprising: a pair of plate members extending substantially perpendicular to the axis of propagation, each provided with a central transmitting port arranged about the axis of propagation, and a peripheral enclosure jointing the pair of plate members at the respective outer edge portions thereof, thereby defining a chamber of resonance between the pair of plate members; wherein a ring-opening about the axis of propagation that enables access to the chamber of resonance is formed between the central transmitting ports of the plate members.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: Ultrasonic measurements of fluid properties are performed with the aid of an optical fiber or a package of optical fibers by exciting ultrasound waves at a first location along the optical fiber in the fluid by means of light from the optical fiber and detecting an effect of the ultrasound waves on light reflection or propagation in the optical fiber and/or a further optical fiber in the package at a second location along the optical fiber or at the end of the optical fiber.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.