Abstract: The present invention relates to a method for preparing a modified stem cell, including the following steps: a cell culture step: culturing stem cells in a first culture medium of a culture dish at a predetermined cell density, and removing the first culture medium after a first culture time to obtain a first cell intermediate; an activity stimulation step: preserving the first cell intermediate in a freezing container having a cell cryopreservation solution, and performing a constant temperature stimulation treatment or a variable temperature stimulation treatment for at least more than 1 day; and a product collection step: after completing the activity stimulation step, placing the freezing container in an environment at a thawing temperature for thawing, and then removing the cell cryopreservation solution to obtain the modified stem cell. The modified stem cell can release at least one or more of IL-4, IL-5, IL-13, G-CSF, Fractalkine, and EGF.

Abstract: The present disclosure provides a vertically conductive semiconductor structure, including a heavily doped layer, a first semiconductor layer, a second semiconductor layer and an ion implanted region in the second semiconductor layer. Conductivity types of the heavily doped layer and the first semiconductor layer are same, and conductivity types of the first semiconductor layer and the second semiconductor layer are opposite. Materials of the first semiconductor layer and the second semiconductor layer are GaN-based materials. Conductivity types of the ion implanted region and the second semiconductor layer are opposite. The ion implanted region includes a first end and a second end that are opposite to each other. The first end is flush with a surface of the second semiconductor layer far from the first semiconductor layer, and the second end connects the first semiconductor layer. A width of the ion implanted region from bottom to top varies.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; and forming a buffer layer adjacent to the gate structure. Preferably, the buffer layer includes a crescent moon shape and the buffer layer includes an inner curve, an outer curve, and a planar surface connecting the inner curve and an outer curve along a top surface of the substrate, in which the planar surface directly contacts the outer curve on an outer sidewall of the spacer.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: The disclosure relates to an automatic measuring system and a method thereof for drilling fluid parameters measurement. The system includes i. mud container, configured for test drilling fluid preparation and samples collection; ii. heat jacket, configured to keep the drilling fluid in the tank warm iii. heat exchanger, configured to simulate the practical conditions; iv. plunger pump, configured to pump the test drilling fluid to the flowing test device; v. flow test device, configured to simulate the flowing states of drilling fluid in the borehole annulus and drilling string, and also measure the pressure and flow rate of drilling fluid vi. control module, configured to obtain rheological parameters and the best rheological mode of the drilling fluid in the borehole annulus and drilling string based on the pressure and flow rate.

Abstract: In the embodiments of the present application, an electrolyte, a lithium-ion battery comprising the electrolyte, a battery module, a battery pack, and a device are provided. The electrolyte in the embodiments of the present application comprises an organic solvent, an electrolyte lithium salt dissolved in the organic solvent, and an additive comprising a first additive and a second additive. The first additive is selected from one or more of the compounds represented by formula I, and the second additive is selected from one or more of the compounds represented by formula II. After applying the electrolyte of the present application to a lithium-ion battery, the lithium ion battery has a better cycle performance and storage performance at a high temperature, and lower direct-current impedance at a low temperature, such that the lithium ion battery has both a better high-temperature performance and a better low-temperature performance.

Abstract: The present disclosure provides a light sensing unit, a gallium nitride (GaN)-based image sensor, and a display apparatus thereof. The light sensing unit includes: red, green, and blue light sensing sub-units, where materials of a light sensing layer of each of the light sensing sub-units are GaN-based materials containing indium(In). The materials of the light sensing layers may contain different contents of In, such that the light sensing sub-units are enabled to generate or not generate light sensing electrical signals according to different wave lengths of received light. During a GaN-based material growth process, the contents of In in different regions are controlled to prepare the light sensing sub-units at the same time to increase integration degrees of the light sensing unit, the GaN-based image sensor, and the display apparatus containing the light sensing unit to achieve miniaturization.

Abstract: An identity certificate may be issued to a blockchain node. The issuance may include issuing a first identity certificate to a first terminal and receiving a second identity certificate issuance request that is from the first terminal. A second identity certificate may be issued to the first terminal, and a third identity certificate issuance request is received from the second terminal. A third identity certificate is issued to the second terminal, so that the second terminal forwards the third identity certificate to the third terminal.

Abstract: Disclosed is an image sensor. The image sensor includes at least one photosensitive unit including at least two photosensitive layers stacked and not completely overlapped, a region where each photosensitive layer is not overlapped with other photosensitive layers being configured to arrange an electrode wire, and photosensitive component contents of the at least two photosensitive layers being different. According to the present disclosure, a wavelength range of sensible light of each photosensitive unit may be enlarged, so that more image details may be recorded, images with a high dynamic range may be generated, and people may experience a visual effect close to a real environment. In addition, as there is no need to reduce a photosensitive area of the photosensitive layer for arranging the electrode wires, the photosensitive area of the photosensitive layer is increased and thereby a dynamic range of the image sensor is improved.

Abstract: An electronic device includes a substrate, a spacer, a first element and a second element. The spacer is disposed on the substrate and has a first portion, a second portion, a first opening, a second opening and a third opening arranged in a first direction. In a cross-section view, the second opening is located between the first opening and the third opening, the first portion is located between the first opening and the second opening, and the second portion is located between the second opening and the third opening. A width of the first portion is less than a width of the second portion in the first direction, and an area of the second opening is different from an area of the first opening. The first element is overlapped with the first opening. The second element is overlapped with the third opening.

Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

Abstract: A method for obtaining and processing image data by using a medical visual aid system including a monitor and an endoscope configured to be inserted into a body cavity and including an image capturing device and a light emitting device, the method including illuminating a field of view of the image capturing device with the light emitting device, capturing the image data using the image capturing device, providing a non-linear scaling model adapted to the body cavity, adjusting the image data by applying the non-linear scaling model such that adjusted image data is formed, and presenting the adjusted image data on the monitor.

Abstract: A resin composition and uses thereof are provided. The resin composition includes: (A) an epoxy resin; (B) a bismaleimide resin; and (C) a first flame retardant having a structure of formula (I): Wherein Ar is a C3 to C18 heteroaryl or a C6 to C18 aryl; R1 is H or a C1 to C18 alkyl; and R2 and R3 are independently H, a C1 to C18 alkyl, a C3 to C18 heteroaryl, or a C6 to C18 aryl.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: A fan includes a fan hub and multiple blades. At least one blade includes a blade body and two extended blade portions. The two extended blade portions are connected to a first edge and a second edge on the blade body. The first edge and the second edge are opposite to sides of the blade body. In a top view, at least one of the two extended blade portions has a first width that is adjacent to the fan hub, and a second width that is away from the fan hub. The second width is larger than the first width. The second width and the first width are connected by a continuous surface. The width of the continuous surface increases away from the first width.

Abstract: The present invention provides a fluorine-containing liquid crystal polymer of Formula (1). The present invention also discloses a fluorine-containing liquid crystal elastomer, which comprises a copolymer of a fluorine-containing liquid crystal polymer of Formula (1) with a near-infrared dye of Formula (2). The fluorine-containing liquid crystal elastomer of the present invention shrinks due to the photothermal conversion effect of the material under the irradiation of near-infrared light, and thus is widely applicable to the field of actuators. The fluorine-containing liquid crystal polymer of the present invention introduces fluorine-containing segments into the cross-linked network of the liquid crystal polymer, to improve the mechanical performance of the material, and greatly extend the service time of light-controlled actuators.

Abstract: A light emitting device includes: a first substrate; a light emitting structure layer located on the first substrate; and an insertion layer located on the light emitting structure layer, a surface, away from the light emitting structure layer, of the insertion layer is a roughened surface, and the insertion layer has a protective effect on the light emitting structure layer. In the light emitting device provided by the present disclosure, the surface, away from the light emitting structure layer, of the insertion layer is the roughened surface, and the insertion layer has the protective effect on the light emitting structure layer during a peeling off process, which solves problems of reduced yield and reduced light extraction efficiency of a light emitting device.

Abstract: A semiconductor structure includes a substrate. The substrate is divided into a first element region, a second element region and a boundary region. The boundary region is disposed between the first element region and a second element region. A first mask structure covers the first element region. A second mask structure is disposed in the second element region. A logic gate structure is disposed within the second element region.

Abstract: A semiconductor structure includes: a first semiconductor layer, including a first surfaces and a second surfaces opposite to the first surface; a second semiconductor layer, disposed on the first semiconductor layer, where a conductive type of the second semiconductor layer is the same as that of the first semiconductor layer, and a doping concentration of the second semiconductor layer is less than that of the first semiconductor layer; grooves, formed in the second semiconductor layer; and a third semiconductor layer, where a conductive type of the third semiconductor layer is different from that of the second semiconductor layer, a material of the third semiconductor layer is different from that of the second semiconductor layer, and at least a portion of the third semiconductor layer is disposed in the grooves.