Abstract: Embodiments of the invention include a semiconductor structure containing a back end of line randomly patterned interconnect structure for implementing a physical unclonable function (PUF), a method for forming the semiconductor device, and a circuit for enabling the interconnect structure to implement the physical unclonable function. The method includes forming a semiconductor substrate and a dielectric layer on the substrate. The randomly patterned interconnect structure is formed in the dielectric layer. The random pattern of the interconnect structure is used to implement the physical unclonable function and is a result of defect occurrences during the manufacturing of the semiconductor structure. The circuit includes n-channel and p-channel metal oxide semiconductor field effect transistors (MOSFETs) and the randomly patterned interconnect structure, which acts as electrical connections between the MOSFETs.

Abstract: An organic material layer is lithographically patterned to include a linear array portion of lines and spaces. In one embodiment, the organic material layer can be an organic planarization layer that is patterned employing a photoresist layer, which is consumed during patterning of the organic planarization layer. Volume expansion of the organic planarization layer upon exposure to a halogen-including gas causes portions of the linear array to collapse at random locations. In another embodiment, the height of the photoresist layer is selected such that the linear array portion of the photoresist layer is mechanically unstable and produces random photoresist collapses. The pattern including random modifications due to the collapse of the organic material layer is transferred into an underlying layer to generate an array of conductive material lines with random electrical disruption of shorts or opens. The structure with random shorts can be employed as a physical unclonable function.

Abstract: A radiation signal measurement system for millimeter wave transceivers is disclosed. Embodiments of the present invention utilize a laser to align the laser with an antenna. The transceiver is then moved into the path of the laser to align the laser with the transceiver. The transceiver or antenna orientation is changed such that the transceiver and antenna face each other, in an aligned position. Millimeter wave absorber material is applied to the inside and outside of the testing chamber to minimize reflections and interference from outside sources.

Abstract: A Physical Unclonable Function (PUF) semiconductor device includes a semiconductor substrate, and a well formed in the semiconductor substrate. The well includes a first region having a first concentration of ions, and at least one second region having a second concentration that is less than the first concentration. First and second FETs are formed on the well. The first and second FETs have a voltage threshold mismatch with respect to one another based on the first region and the at least one second region.

Abstract: A clock phase shift detector circuit may include a phase detector that receives a first and a second clock signal, whereby the phase detector generates a phase signal based on a phase difference between the first and the second clock signal. A first integrator is coupled to the phase detector, receives the phase signal, and generates an integrated phase signal. A second integrator receives the first clock signal and generates an integrated first clock signal. A comparator is coupled to the first and the second integrator, whereby the comparator receives the integrated phase signal and the integrated first clock signal. The comparator may then generate a control signal that detects a change between the phase difference of the first and the second clock signal and an optimized phase difference based on an amplitude comparison between the integrated phase signal and the integrated first clock signal.

Abstract: A method and apparatus for repairing transistors may include applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time. In this manner the transistor structure may be repaired or returned to operate at or near the original operating characteristics.

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

Abstract: Embodiments of the invention include a semiconductor structure containing a back end of line randomly patterned interconnect structure for implementing a physical unclonable function (PUF), a method for forming the semiconductor device, and a circuit for enabling the interconnect structure to implement the physical unclonable function. The method includes forming a semiconductor substrate and a dielectric layer on the substrate. The randomly patterned interconnect structure is formed in the dielectric layer. The random pattern of the interconnect structure is used to implement the physical unclonable function and is a result of defect occurrences during the manufacturing of the semiconductor structure. The circuit includes n-channel and p-channel metal oxide semiconductor field effect transistors (MOSFETs) and the randomly patterned interconnect structure, which acts as electrical connections between the MOSFETs.

Abstract: A FET pair based physically unclonable function (PUF) circuit with a constant common mode voltage and methods of use are disclosed. The circuit includes a first n-type field effect transistor (NFET) and a second NFET. The circuit also includes a first load resistor coupled to the first NFET by a first p-type field effect transistor (PFET) and a second load resistor coupled to the second NFET by a second PFET. The circuit further comprises a closed loop, wherein the closed loop creates a constant common mode voltage.

Abstract: A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.

Abstract: An integrated circuit, testing structure, and method for monitoring electro-migration (EM) performance. A method is described that includes method for measuring on-chip electro-migration (EM) performance, including: providing a first on-chip sensor continuously powered with a stress current; providing a second on-chip sensor that is powered only during measurement cycles with a nominal current; obtaining a first resistance measurement from the first on-chip sensor and a second resistance measurement from the second on-chip sensor during each of a series of measurement cycles; and processing the first and second resistance measurements.

Abstract: A transmission wiring structure, associated design structure and associated method for forming the same. A structure is disclosed having: a plurality of wiring levels formed on a semiconductor substrate; a pair of adjacent first and second signal lines located in the wiring levels, wherein the first signal line comprises a first portion formed on a first wiring level and a second portion formed on a second wiring level; a primary dielectric structure having a first dielectric constant located between the first portion and a ground shield; and a secondary dielectric structure having a second dielectric constant different than the first dielectric constant, the secondary dielectric structure located between the second portion and the ground shield, and the second dielectric layer extending co-planar with the second portion and having a length that is substantially the same as the second portion.

Abstract: A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel.

Abstract: A type of device (which can be deployed in a semiconductor manufacturing line) determining whether a device-under-test is generating burst noise. A transimpedance amplifier converts a current-based noise signal to a voltage based noise signal to apply the following tests aimed at determining the presence of burst noise: (i) sufficiently wide pulse width in the noise signal; (ii) sufficiently random pulse width in the noise signal; (iii) sufficiently wide pulse separation in the noise signal; (iv) sufficiently random pulse separation in the noise signal; and (v) sufficiently large pulse amplitude (or magnitude) in the noise signal.

Abstract: A method and apparatus for repairing transistors may include applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time. In this manner the transistor structure may be repaired or returned to operate at or near the original operating characteristics.

Abstract: A method of modeling an integrated circuit chip includes generating a model of a bond pad using a design tool running on a computer device. The method also includes connecting a first inductor, a first resistor, and a first set of parallel-resistor-inductor elements in series between a first node and a second node in the model. The method further includes connecting a second inductor, a second resistor, and a second set of parallel-resistor-inductor elements in series between the second node and a third node in the model. The first node corresponds to a first signal port of the bond pad. The second node corresponds to a second signal port of the bond pad.

Abstract: A method of modeling an integrated circuit chip includes generating a model of a bond pad using a design tool running on a computer device. The method also includes connecting a first inductor, a first resistor, and a first set of parallel-resistor-inductor elements in series between a first node and a second node in the model. The method further includes connecting a second inductor, a second resistor, and a second set of parallel-resistor-inductor elements in series between the second node and a third node in the model. The first node corresponds to a first signal port of the bond pad. The second node corresponds to a second signal port of the bond pad.

Abstract: A dynamic latch has a pair of parallel pass gates (a first parallel pass gate that receives a seed signal, and a second parallel pass gate that receives a data signal). A first latch logic circuit performs logic operations using signals output by the parallel pass gates to produce an updated data signal. An additional pass gate is operatively connected to the first latch logic circuit. An additional pass gate controls passage of the updated data signal. An inverter receives the updated data signal from the pass gate, and inverts and outputs the updated data signal as an output data signal. Thus, the dynamic latch comprises two inputs into the pair of parallel pass gates and performs only one of four logical operations on a received data signal. The four logical operations are performed using the signals applied to the two inputs.

Abstract: A method and apparatus for repairing transistors comprises applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time In this manner the semiconductor structure may be repaired or returned to the at or near the original operating characteristics.

Abstract: A clock phase shift detector circuit may include a phase detector that receives a first and a second clock signal, whereby the phase detector generates a phase signal based on a phase difference between the first and the second clock signal. A first integrator is coupled to the phase detector, receives the phase signal, and generates an integrated phase signal. A second integrator receives the first clock signal and generates an integrated first clock signal. A comparator is coupled to the first and the second integrator, whereby the comparator receives the integrated phase signal and the integrated first clock signal. The comparator may then generate a control signal that detects a change between the phase difference of the first and the second clock signal and an optimized phase difference based on an amplitude comparison between the integrated phase signal and the integrated first clock signal.