Abstract: A system, method and apparatus may comprise a wafer having a plurality of spiral test structures located on the kerf of the wafer. The spiral test structure may comprise a spiral connected at either end by a capacitor to allow the spiral test structure to resonate. The spiral structures may be located on a first metal layer or on multiple metal layers. The system may further incorporate a test apparatus having a frequency transmitter and a receiver. The test apparatus may be a sensing spiral which may be placed over the spiral test structures. A controller may provide a range of frequencies to the test apparatus and receiving the resonant frequencies from the test apparatus. The resonant frequencies will be seen as reductions in signal response at the test apparatus.

Abstract: A radiation signal measurement system for millimeter wave transceivers is disclosed. Embodiments of the present invention utilize a laser to align the laser with an antenna. The transceiver is then moved into the path of the laser to align the laser with the transceiver. The transceiver or antenna orientation is changed such that the transceiver and antenna face each other, in an aligned position. Millimeter wave absorber material is applied to the inside and outside of the testing chamber to minimize reflections and interference from outside sources.

Abstract: A test circuit for a ring oscillator comprising a plurality of inverting stages includes a power supply, the power supply configured to provide a voltage to the plurality of inverting stages of the ring oscillator at a power output; and a power sensing resistor located between the power output of the power supply and direct current (DC) bias inputs of the inverting stages of the ring oscillator, wherein a signal from the power sensing resistor is configured to be monitored to determine a characteristic of the ring oscillator.

Abstract: A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.

Abstract: A clock phase shift detector circuit may include a phase detector that receives a first and a second clock signal, whereby the phase detector generates a phase signal based on a phase difference between the first and the second clock signal. A first integrator is coupled to the phase detector, receives the phase signal, and generates an integrated phase signal. A second integrator receives the first clock signal and generates an integrated first clock signal. A comparator is coupled to the first and the second integrator, whereby the comparator receives the integrated phase signal and the integrated first clock signal. The comparator may then generate a control signal that detects a change between the phase difference of the first and the second clock signal and an optimized phase difference based on an amplitude comparison between the integrated phase signal and the integrated first clock signal.

Abstract: A FET pair based physically unclonable function (PUF) circuit with a constant common mode voltage and methods of use are disclosed. The circuit includes a first n-type field effect transistor (NFET) and a second NFET. The circuit also includes a first load resistor coupled to the first NFET by a first p-type field effect transistor (PFET) and a second load resistor coupled to the second NFET by a second PFET. The circuit further comprises a closed loop, wherein the closed loop creates a constant common mode voltage.

Abstract: A clock phase shift detector circuit may include a phase detector for generating a phase signal based on a phase difference between first and second clock signals. A current mirror having a first, a second, and a third integrator may be coupled to the phase detector, whereby the first integrator integrates the first clock signal and generates a first voltage, the second integrator integrates the first clock signal and generates a second voltage, and the third integrator integrates the phase signal and generates a third voltage. A first comparator receives the first and the third voltage, and generates a first control signal. A second comparator receives the second and the third voltage, and generates a second control signal. The first and second control signals may detect a change between the phase difference of the first and the second clock signal and an optimized phase difference.

Abstract: Embodiments of the present invention provide an approach for utilizing a sense amplifier to select a suitable circuit, wherein a suitable circuit generates a voltage that is greater than or equal to a configurable reference voltage. An amplifier gain selector selects a voltage gain of a sense amplifier having input terminals, auxiliary inputs, an output, an array of resistive loads, and the amplifier gain selector. Auxiliary inputs are utilized to nullify direct current (DC) offset voltage of the sense amplifier. Combinatorial logic circuitry connects the input terminals of the sense amplifier to output terminals of a circuit that is within a group of circuits. A comparator circuit determines if the circuit generates a voltage greater than or equal to a configurable reference voltage, based on the output of the sense amplifier.

Abstract: An electromagnetic shielding structure that includes a conductive structure surrounding and accommodating a circuit or a circuit device arranged on a substrate. At least one feed through device is associated with the conductive structure and provides signals to the circuit or circuit device. The method includes forming a shielding structure so that the shielding structure at least one of is at least partially arranged within the substrate and surrounds the circuit or circuit device and associating at least one feed through device with the shielding structure.

Abstract: A method includes phase-shifting an output signal of a phase lock loop (PLL) circuit by applying an injection current to an output of a charge pump of a the PLL circuit. A circuit includes: a first phase lock loop (PLL) circuit and a second PLL circuit referenced to a same clock; a phase detector circuit that detects a phase difference between an output signal of the first PLL circuit and an output signal of the second PLL circuit; and an adjustable current source that applies an injection current to at least one of the first PLL circuit and the second PLL circuit based on an output of the phase detector circuit.

Abstract: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. The design structure comprises: a conductive structure surrounding and accommodating a circuit or a circuit device arranged on a substrate and at least one feed through capacitor and one transmission line associated with the conductive structure and providing the power supply and signals to the circuit or circuit device respectively. The design structure also comprises a shielding structure surrounding a circuit or a circuit device arranged on a substrate and at least one feed through capacitor or a transmission line arranged on a side of the shielding structure.

Abstract: Embodiments of the present invention provide an approach for utilizing a sense amplifier to select a suitable circuit, wherein a suitable circuit generates a voltage that is greater than or equal to a configurable reference voltage. An amplifier gain selector selects a voltage gain of a sense amplifier having input terminals, auxiliary inputs, an output, an array of resistive loads, and the amplifier gain selector. Auxiliary inputs are utilized to nullify direct current (DC) offset voltage of the sense amplifier. Combinatorial logic circuitry connects the input terminals of the sense amplifier to output terminals of a circuit that is within a group of circuits. A comparator circuit determines if the circuit generates a voltage greater than or equal to a configurable reference voltage, based on the output of the sense amplifier.

Abstract: A method for fabricating an interconnect function array includes forming a first plurality of conductive lines on a substrate, forming an insulator layer over the first plurality of conductive lines and the substrate, removing portions of the insulator layer to define cavities in the insulator layer that expose portions of the substrate and the first plurality of conductive lines, wherein the removal of the portions of the insulator layer results in a substantially random arrangement of cavities exposing portions of the substrate and the first plurality of conductive lines, depositing a conductive material in the cavities, and forming a second plurality of conductive lines on portions of the conductive material in the cavities and the insulator layer.

Abstract: A function cell comprising a first field effect transistor (FET) device, a second FET device, a first node connected to a gate terminal of the first FET device and a gate terminal of the second FET device, wherein the first node is operative to receive a voltage signal from an alternating current (AC) voltage source, an amplifier portion connected to the first FET device and the second FET device, the amplifier portion operative to receive a signal from the first FET device and the second FET device, a phase comparator portion having a first input terminal connected to an output terminal of the amplifier and a second input terminal operative to receive the voltage signal from the AC voltage source, the phase comparator portion operative to output a voltage indicative of a bit of a binary value.

Abstract: A phase lock loop (PLL) includes a PLL feedback circuit having a feedback divider. The feedback divider has a first dynamic latch, a first logic circuit, and a plurality of serially connected dynamic latches. Each of the serially connected dynamic latches receives and forwards additional data signals to subsequent ones of the serially connected dynamic latches in series. The second-to-last dynamic latch in the series outputs a fourth data signal to a last dynamic latch in the series. The last dynamic latch receives the fourth data signal and outputs a fifth data signal. A first feedback loop receives the fourth data signal from the second-to-last dynamic latch and the fifth data signal from the last dynamic latch. The first feedback loop comprises a NAND circuit that combines the fourth and fifth data signals and the first feedback loop outputs the first feedback signal.

Abstract: A function cell comprising a first field effect transistor (FET) device, a second FET device, a first node connected to a gate terminal of the first FET device and a gate terminal of the second FET device, wherein the first node is operative to receive a voltage signal from an alternating current (AC) voltage source, an amplifier portion connected to the first FET device and the second FET device, the amplifier portion operative to receive a signal from the first FET device and the second FET device, a phase comparator portion having a first input terminal connected to an output terminal of the amplifier and a second input terminal operative to receive the voltage signal from the AC voltage source, the phase comparator portion operative to output a voltage indicative of a bit of a binary value.

Abstract: A semiconductor chip integrating a transceiver, an antenna, and a receiver is provided. The transceiver is located on a front side of a semiconductor substrate. A through substrate via provides electrical connection between the transceiver and the receiver located on a backside of the semiconductor substrate. The antenna connected to the transceiver is located in a dielectric layer located on the front side of the substrate. The separation between the reflector plate and the antenna is about the quarter wavelength of millimeter waves, which enhances radiation efficiency of the antenna. An array of through substrate dielectric vias may be employed to reduce the effective dielectric constant of the material between the antenna and the reflector plate, thereby reducing the wavelength of the millimeter wave and enhance the radiation efficiency. A design structure for designing, manufacturing, or testing a design for such a semiconductor chip is also provided.

Abstract: An embedded decoupling capacitor wearout monitor for power transmission line, which can be integrated and fabricated in any standard CMOS or BiCMOS circuits. The embedded noise monitor is employed to detect the degraded capacitor and disable it from further operation, which will extend the operation lifetime of the circuit system and prevent subsequent catastrophic failure as a result of hard-breakdown (or capacitor short). In one aspect, the monitor circuit and method detects early degradation signal before catastrophic decoupling capacitor failure and, further can pin-point a degraded decoupling capacitor and disable it, avoiding impact from decoupling capacitor breakdown failure. The monitor circuit and method provides for decoupling capacitor redundancy and includes an embedded and self-diagnostic circuit for functionality and reliability.

Abstract: A single pole double throw (SPDT) semiconductor switch includes a series connection of a first transmitter-side transistor and a first reception-side transistor between a transmitter node and a reception node. Each of the two first transistors is provided with a gate-side variable impedance circuit, which provides a variable impedance connection between a complementary pair of gate control signals. Further, the body of each first transistor can be connected to a body bias control signal through a body-side variable impedance circuit. In addition, the transmitter node is connected to electrical ground through a second transmitter-side transistor, and the reception node is connected to electrical ground through a second reception-side transistor. Each of the second transistors can have a body bias that is tied to the body bias control signals for the first transistors so that switched-off transistors provide enhanced electrical isolation.

Abstract: A selectable latch has a pair of parallel pass gates (a first parallel pass gate that receives a seed signal, and a second parallel pass gate that receives a data signal). A first latch logic circuit performs logic operations using signals output by the parallel pass gates to produce an updated data signal. An additional pass gate is operatively connected to the first latch logic circuit. An additional pass gate controls passage of the updated data signal. The output of the parallel pass gates and the additional pass gate is connected to a feedback loop. The feedback loop operates as a dynamic latch for high frequency applications or as a static latch for low frequency applications. Thus, the selectable latch comprises two inputs into the pair of parallel pass gates and performs only one of four logical operations on a received data signal.