Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a chip structure including a substrate and a wiring structure over a first surface of the substrate. The semiconductor device structure includes a first seed layer over the wiring structure, a first inner wall of the first enlarged portion, and a second inner wall of the neck portion. The semiconductor device structure includes a second seed layer over a second surface of the substrate, a third inner wall of the second enlarged portion, and the first seed layer over the second inner wall of the neck portion. The second seed layer is in direct contact with the first seed layer.

Abstract: A hardware-aware zero-cost neural network architecture search system is configured to perform the following. A neural network search space is divided into multiple search blocks. Each of the search blocks includes multiple candidate blocks. The candidate blocks are guided and scored through a latent pattern generator. The candidate blocks in each of the search blocks are scored through a zero-cost accuracy proxy. One of the candidate blocks included in each of the search blocks is sequentially selected as selected candidate blocks, the selected candidate blocks are combined into multiple neural networks to be evaluated, and network potential of the neural networks to be evaluated is calculated according to scores of the selected candidate blocks. One neural network to be evaluated with the highest network potential is selected to determine the corresponding selected candidate blocks.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.

Abstract: A first device performs periodic scanning alternately, where a first scanning periodicity is used for a first-type Bluetooth connection, and a second scanning periodicity is used for a second-type Bluetooth connection; the first device receives a first-type data packet from a second device in a first scan window of any first scanning periodicity, where the first-type data packet is used to establish the first-type Bluetooth connection; the first device obtains, based on the first-type data packet, a second connection parameter for establishing the second-type Bluetooth connection to the second device; and the first device establishes the second-type Bluetooth connection to the second device based on the second connection parameter.

Abstract: The subject invention pertains to a method for promoting axon regeneration in a subject with central nervous system injury. More specifically, the method comprises activating STAT1 signaling, cGAS-STING pathway, or a combination thereof by administering IFN? and inhibiting the expression or function Protein Tyrosine Phosphatase Non-Receptor Type 2 (PTPN2) inhibitor; or administering a STING agonist.

Abstract: Present invention is related to a tumor microenvironment on chip or a biochip for cell therapy having a carrier, a first cell or tissue culture area and a second cell or tissue area imbedded within the carrier. The present invention provides a biochip successfully cooperating micro fluidic technology and cell culture achieving the goal for detecting or testing the function of cell therapy for cancer or tumor.

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: A nuclide-labeled inhibitory peptide, and a preparation method therefor and use thereof are provided. The nuclide-labeled inhibitory peptide is prepared by labeling ASF1a peptide with 68Ga/177Lu by DOTA, and an amino acid sequence of the ASF1a peptide is YGRKKRRQRRRCASTEEKWARLARRIAGAGGVTLDGFGGCA (as shown in SEQ ID NO: 1). The 68Ga labeled ASF1a inhibitory peptide of the present invention displays the expression level of ASF1a of a tumor through PET/CT imaging, has good imaging sensitivity, can specifically screen high-expression and low-expression individuals, and achieves noninvasive prediction of the efficacy of tumor immunotherapy. The 177Lu-labeled ASF1a inhibitory peptide provides a novel and effective therapeutic strategy for a tumor that highly expresses ASF1a and is not effective for immunotherapy.

Abstract: The invention relates to a logic control device of a serial peripheral interface, a master-slave system and a master-slave switchover method therefor. The logic control device is connected between N masters and M slaves, and define master-slave connection relationships between each of the masters and each of the slaves. Each of the master-slave connection relationship is that each of the masters and each of the slaves transmit information one-to-one at the same time, and includes connecting the logic control device between the masters and the slaves to form the master-slave system as well as the master-slave switchover method therefor.

Abstract: In a communication method, when MAC addresses in a plurality of VSI messages conflict, in response to only some of the VSI messages, a VSI message receiving end sends an action response message carrying a conflicting MAC address. In this way, a device that can correctly decrypt the action response message can decrypt, for a few times, ciphertext information in received action-request messages using a key of the device.

Abstract: Disclosed is an electronic device including a display module and a camera module. The display module includes a first substrate and a second substrate stacked with each other, and a routing structure arranged on a surface of one side of the second substrate facing towards the first substrate, and provided with a first light-passing hole. The camera module includes a camera body and a light-shielding layer arranged on a surface of one side of the first substrate away from the second substrate and provided with a light inlet hole and a second light-passing hole. The first light-passing hole, the second light-passing hole, and the light inlet hole are arranged in an optical axis direction of the camera module. An orthographic projection of the first light-passing hole and the second light-passing hole on a surface perpendicular to the optical axis direction fall within an orthographic projection of the light inlet hole.

Abstract: A cooling system includes a tank, a heat exchanger, a separation tank, a first tube, a second tube, a third tube, a gas storage device, a fourth tube, a first valve, a second valve and a third valve. A heating element is immersed in a dielectric liquid in the tank. The heat exchanger condenses dielectric vapor of the dielectric liquid. The separation tank is used for a separation operation. The first tube is connected to the tank and the heat exchanger. The second tube is connected to the heat exchanger and the separation tank. The third tube is connected to the separation tank and the tank. The gas storage device stores the dielectric vapor. The fourth tube is connected to the gas storage device and the separation tank.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: The photovoltaic system includes an inverter, a fan, and a controller. A photovoltaic string and a direct current bus capacitor are connected between a positive input end and negative input end of the inverter. The controller receives a fast shutdown instruction and sends a drive signal to a switching transistor in the inverter, so that the switching transistor performs a switching action under the action of the drive signal, and the switching transistor consumes electric energy during the switching action; or the controller turns on the fan after receiving the fast shutdown instruction to consume electric energy by using the fan; or the controller may send the drive signal to the switching transistor and also control the fan to be turned on, so that both the switching transistor and the fan consume electric energy.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and nanostructures suspended over the substrate. The semiconductor structure also includes a gate structure wrapping around the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure also includes a contact vertically over the source/drain structure and a first conductive structure vertically over the gate structure. The semiconductor structure also includes a second conductive structure in contact with a top surface of the first conductive structure and a top surface of the contact and including an extending portion laterally sandwiched between the first conductive structure and the contact.

Abstract: Various embodiments include sensor shift flexure arrangements for improved signal routing. For example, a camera with sensor shift actuation may include a flexure for suspending an image sensor from a stationary structure of the camera, and for allowing motion of the image sensor enabled by one or more actuators of the camera. The flexure may be configured to convey electrical signals between the image sensor and a flex circuit in some embodiments. According to some embodiments, the flexure may include a stack of layers comprising a conductive layer and an electrical grounding. The conductive layer may include a signal pad region and a signal trace region. A distance between at least one section of the signal pad region and the electrical grounding may be greater than a distance between at least a section of the signal trace region and the electrical grounding.

Abstract: An aiming system includes a positioner, an aiming device, and a processor. The positioner has a function of acquiring spatial information, and the aiming device is connected to the positioner, and the processor is connected to the positioner or the aiming device. A method of using the aiming system is also provided. Surgical guidance is more intuitive by directly combining the positioner with the aiming device.