Abstract: An apparatus and system for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes of reaction detector. The reaction detector is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: A two-part solar energy collection system for installation on a planar support surface (e.g., a rooftop) includes a permanent positioning component including a base structure and a replaceable solar collector component including solar energy collection elements fixedly mounted on a support frame. Each collection element includes an optical element arranged to focus solar radiation onto a focal line, and a linearly-arranged solar energy collector (e.g., PV cells) fixedly maintained on the focal line. The replaceable solar collector component is secured to a rotating platform of the base structure such that the focal lines of the solar energy collection elements are maintained in a plane that is substantially parallel to the support surface, and the rotating platform and replaceable solar collector component are collectively pivoted by a positioning system around a rotational axis to align the PV cells) parallel to the received sunlight beams.

Abstract: A rotational trough reflector solar-electricity generation device includes a trough reflector that rotates around a substantially vertical axis and includes a solid optical element having a linear parabolic convex surface that serves as a base for automatically positioning a mirror to focus sunlight onto a focal line, and a flat aperture surface that serves to support a strip-type photovoltaic (PV) receiver on the focal line. A tracking system rotates the trough reflector such that the trough reflector is aligned generally parallel to the incident sunlight (e.g., in a generally east-west direction at sunrise, turning to generally north-south at noon, and turning generally west-east at sunset). A disc-shaped support structure is used to distribute the reflector's weight over a larger area and to minimize the tracking system motor size. Multiple trough reflectors are mounted on the disc-shaped support to maximize power generation.

Abstract: In accordance with one aspect of the present disclosure, a solar photovoltaic device is disclosed. The semiconductor material of the solar photovoltaic device is a heterostructure of two different binary compounds of the same metal. One or both of the two different binary compounds of the same metal are doped so that they have a conduction band edge offset of greater than about 0.4 eV. The binary compound acting as the optical absorbing material of the solar photovoltaic device has a bandgap of about 1.0 eV to about 1.8 eV.

Abstract: A method of manufacturing a fuel cell includes applying a sacrificial material periodically to a surface of an anode substrate, wherein at least some areas of the anode substrate have no sacrificial material. A first gas diffusion layer is applied to the sacrificial material, and a first catalyst material is applied to the first gas diffusion layer. An electrolyte material is applied to the anode substrate and the first gas diffusion layer, with the catalyst material, wherein a first surface of the electrolyte material is in operative association with the anode substrate, and the first gas diffusion layer. A second catalyst material is applied to the second surface of the electrolyte material. A second gas diffusion layer is applied to the electrolyte material on a second surface of the electrolyte material, with the catalyst material, wherein a first surface of the second gas diffusion layer is in contact with the second surface of the electrolyte material with the catalyst material.

Abstract: Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

Abstract: A system and method for recovery of CO2 includes an aqueous capture device having a capture solution. The aqueous capture device is arranged to receive gas and to capture components from the gas including at least CO2. An electrodialysis unit in operative connection with the capture device performs an electrodialysis operation on the capture solution including at least the CO2, wherein a CO2 rich process stream and a regenerated capture solution are generated from the capture solution including at least the CO2. The CO2 rich process stream is a pressurized process stream at a pressure which maintains the CO2 substantially within the CO2 rich process stream, while in the electrodialysis unit. In another alternative, at least the pH of the capture stream is controlled.

Abstract: A marking apparatus including a traveling wave grid toner transport circuit structure for transporting powdered toner along a transport surface, and electromechanical elements for selectively enabling toner patches to be projected to an output medium by a projecting electric field.

Abstract: A method and apparatus for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes in a reaction cell. The reaction cell is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: A method and apparatus for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes in a reaction cell. The reaction cell is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: An apparatus and system for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes of reaction detector. The reaction detector is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: Methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.

Abstract: A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: A method and apparatus for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes of reaction detector. The reaction detector is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: A compressed air energy storage system including a gas inlet pipe, at least one air compressor stage attached to the gas inlet pipe and adapted for compression of a gas, a heat transfer system to cool the gas during or after compression, at least one absorption bed attached to the heat transfer system, at least one compressed gas reservoir having an inlet and an outlet, the compressed gas reservoir being attached at its inlet to the absorption bed, at least one preheater stage that is attached to the outlet of the compressed gas reservoir for heating a compressed gas before expansion but after storage in the compressed gas reservoir, and at least one gas expander that is attached to the preheater stage and is adapted for the expansion of the compressed gas.

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

Abstract: A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics. In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 ?m to 100 ?m.