Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: In accordance with one aspect of the present application, a solar photovoltaic cell is disclosed. The semiconductor material of the solar photovoltaic cell includes an inter-digitated nanostructure of a charge transport material and an optical absorbing material. The charge transport material is formed by anodization of a metal, preferably a transition metal. The resultant charge transport material has an array of discrete, substantially parallel and cylindrical pores formed therein. These pores are filled with the optical semiconductor material, which can include a solution of organic semiconducting materials or an inorganic semiconducting oxide material.

Abstract: A system and method of operation for a piezoelectric transducer is described which utilizes a mesa structure interposed between a piezoelectric material element and a chamber diaphragm. The system can be used as a sensor where a net motion to the diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm. Alternatively, the system can be used as an actuator wherein an applied voltage causes movement of the piezoelectric transducer and the chamber diaphragm.

Abstract: A system and method of operation for a piezoelectric transducer is described which utilizes a mesa structure interposed between a piezoelectric material element and a chamber diaphragm. The mesa structure may further comprise a series of mesa openings at least partially filled with adhesive and mesa grooves. The system can be used as a sensor where a net motion to the diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm. Alternatively, the system can be used as an actuator wherein an applied voltage causes movement of the piezoelectric transducer and the chamber diaphragm.

Abstract: A flexible detection/test tape includes a first flexible conductive layer, and a second flexible conductive layer positioned opposite the first conductive layer. A plurality of at least one of sensors, actuators or transducers are positioned between and are bonded to the first flexible conductive layer and the second flexible conductive layer. An insulative material is inserted around the plurality of at least one of the sensors, actuators or transducers. An electrical contact network connects to the first flexible conductive layer and the second flexible conductive layer, whereby power and control signals are provided to the flexible detection/test tape.

Abstract: A circuit provides energy to a plurality of piezoelectric diaphragm structures formed in a two-dimensional array. Each piezoelectric diaphragm structure includes a piezoelectric element in operational contact with at least a first side electrode and a second side electrode. A switching system includes a first connection for a first power source, for application of power to the first side electrode and a second connection for a second power source, for application of power to the second side electrode. In a first state, power appropriate for performing a poling operation of the piezoelectric material is available for application to the first electrode, and the second electrode, and in a second state, power appropriate to activate the piezoelectric material to cause operational movement of the poled piezoelectric diaphragm structure is available for application to the first electrode and the second electrode.

Abstract: A system and method of operation is described which utilizes an array of piezoelectric actuators distributed over the surface of a diaphragm. In one embodiment, the piezoelectric actuator array is used to cause a net motion of the diaphragm equal to the sum of the motions of each individual sub-chamber diaphragm. The system can be used as a sensor where a common motion applied to the sub-chamber diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm.

Abstract: A material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 ?m to 100 ?m. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.

Abstract: Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film formation to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.

Abstract: A method and apparatus for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes of reaction detector. The reaction detector is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: A multi-electrode piezoelectric diaphragm structure includes a diaphragm, piezoelectric material located on the diaphragm, which is defined as having a first area, and a second area. The first area of the piezoelectric is poled in a first direction, and the second area of the piezoelectric is poled in a second direction. The poled first direction is in a Z-axis of the piezoelectric and the poled second direction is in a Radial axis of the piezoelectric. A first electrode is positioned in the first area, on the first surface, of the piezoelectric. A second electrode is positioned in the second area, on the first surface, of the piezoelectric. A third electrode is located on a second surface of the piezoelectric.

Abstract: A circuit provides energy to a plurality of piezoelectric diaphragm structures formed in a two-dimensional array. Each piezoelectric diaphragm structure includes a piezoelectric element in operational contact with at least a first side electrode and a second side electrode. A switching system includes a first connection for a first power source, for application of power to the first side electrode and a second connection for a second power source, for application of power to the second side electrode. In a first state, power appropriate for performing a poling operation of the piezoelectric material is available for application to the first electrode, and the second electrode, and in a second state, power appropriate to activate the piezoelectric material to cause operational movement of the poled piezoelectric diaphragm structure is available for application to the first electrode and the second electrode.

Abstract: A method and apparatus for measuring the presence or absence of reaction between a first and second material of interest by measuring osmotic pressure changes in a reaction cell. The reaction cell is capable of measuring the small changes in pressure that occur due to osmotic pressure shifts during a catalytic or binding reaction at species concentrations down to approximately 10?7 M.

Abstract: In accordance with one embodiment of the present application, a piezoelectric diaphragm structure includes a diaphragm, with a piezoelectric material located on the diaphragm. The piezoelectric material is being poled in a radial direction to the piezoelectric material, wherein the poling direction is in-plane with the piezoelectric material. An inter-digitated electrode grid is positioned on a first surface of the piezoelectric material, the inter-digitated electrode grid including a plurality of electrodes configured to selectively receive positive and negative voltage. The application of the positive and negative voltages generate electric fields in the piezoelectric material, at least a portion of which are in-plane with the piezoelectric material, resulting in an actuation of the piezoelectric material, causing a length change of the piezoelectric material in the Radial direction.

Abstract: A piezoelectric thick film element array includes at least one piezoelectric element structure having a thickness between 10 ?m to 100 ?m formed by a deposition process. The at least one piezoelectric element is patterned during the deposition process, and includes a first electrode deposited on a first surface of the piezoelectric elements structure, and a second electrode deposited on a second surface of the piezoelectric element structure. In a further embodiment, several devices are provided using a piezoelectric element or an array having a piezoelectric element structure with a thickness of between 10 ?m to 100 ?m formed by a deposition process. These devices include microfluidic ejectors, transducer arrays and catheters.

Abstract: Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film information to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.

Abstract: A method and apparatus to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract: A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.

Abstract: A flexible detection/test tape includes a first flexible conductive layer, and a second flexible conductive layer positioned opposite the first conductive layer. A plurality of at least one of sensors, actuators or transducers are positioned between and are bonded to the first flexible conductive layer and the second flexible conductive layer. An insulative material is inserted around the plurality of at least one of the sensors, actuators or transducers. An electrical contact network connects to the first flexible conductive layer and the second flexible conductive layer, whereby power and control signals are provided to the flexible detection/test tape.

Abstract: A system and method of operation for a piezoelectric transducer is described which utilizes a mesa structure interposed between a piezoelectric material element and a chamber diaphragm. The mesa structure may further comprise a series of mesa openings at least partially filled with adhesive and mesa grooves. The system can be used as a sensor where a net motion to the diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm. Alternatively, the system can be used as an actuator wherein an applied voltage causes movement of the piezoelectric transducer and the chamber diaphragm.