Abstract: The disclosure pertains to a semiconductor device and its manufacture method, the semiconductor device including non-volatile memory cells and a peripheral circuit including field effect transistors having an insulated gate. A semiconductor device and its manufacture method are to be provided, the semiconductor device having memory cells with a high retention ability and field effect transistors having an insulated gate with large drive current. The semiconductor device has a semiconductor substrate (1) having first and second areas (AR1, AR2), a floating gate structure (4, 5, 6, 7, 8) for a non-volatile memory cell, a control gate structure (14) formed coupled to the floating gate structure, formed in the first area, and an insulated gate electrode (12, 14) for a logical circuit formed in the second area, wherein the floating gate structure has bird's beaks larger than those of the insulated gate electrode.

Abstract: A semiconductor device has a guard ring in a multilayer interconnection structure, wherein the guard ring includes a conductive wall extending zigzag in a plane parallel with a principal surface of a substrate.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A semiconductor device has a guard ring in a multilayer interconnection structure, wherein the guard ring includes a conductive wall extending zigzag in a plane parallel with a principal surface of a substrate.

Abstract: The wiring harness has a plurality of first sub-harnesses and a plurality of second sub-harnesses. The first sub-harness has a first press-fit terminal joined to each end of a first electrical cable, and the first sub-harness has a first isolator holding the first press-fit terminal. The second sub-harness has a second press-fit terminal, a crimp terminal, a connector housing for accommodating the crimp terminal, and a second isolator supporting the second press-fit terminal. The second press-fit terminal is connected to one end of a second electrical cable, and the crimp terminal is connected to the other end of the second electrical cable. The press-fit terminals held by different ones of the isolators can be connected to one another when any of the first and second isolators are layered.

Abstract: A terminal mounting apparatus inserts press-fit terminals into a terminal housing for constituting a joint connector. The terminal mounting apparatus has a terminal positioning unit, a transfer unit, a carrier cutting unit, a tab bending unit, a separator, and an insertion unit. The terminal positioning unit adjusts spaces between adjacent ones of the terminals such that each of the terminals can enter one of the terminal insertion channels. The transfer unit transfers the terminals. The carrier cutting unit removes a desired joint portion jointing the terminals. The tab bending unit brings a desired contact tab, which can connect an upper one to a lower one of the terminals, into a connection state. The separator adjusts spaces between the terminals to correspond to spaces between terminal insertion channels. The insertion unit presses the terminals all at once into the terminal insertion channels.

Abstract: A crimping apparatus comprises a pair of frames; a pair of crimpers each provided centrally in each frame; pairs of connector tables each provided movably in a longitudinal direction on each frame; locking means for securing the connector tables on both ends of each frame; moving means for moving each said connector table along the frame; and a pair of connector holding poles in each of which a plurality of connectors are arranged to be settable on each the connector table. Thus, a large number of kinds of sub-harnesses can be manufactured.

Abstract: A method for producing a semiconductor device is disclosed that is capable of improving device isolation capability of a device isolation film, and enables effective formation of gate insulating films having different film thicknesses. This method can be used in fabricating a semiconductor device having non-volatile memories with logic elements embedded. As one embodiment, a substrate protection film is formed on a silicon substrate, then an oxide film is formed in a flash cell region with a logic region being covered by the substrate protection film. Next, in the logic region, an intermediate oxide film is formed in a thick film region of the logic region with a thin film region of the logic region being covered by the substrate protection film. Then, the substrate protection film in the thin film region of the logic region is removed, and an oxide film is formed therein.

Abstract: In an electrophotographic photosensitive member having a support at least the surface of which is conductive, and a photoconductive layer formed thereon containing an amorphous material composed chiefly of silicon, the photoconductive layer has two or more layer regions, and protuberances in a layer region adjoining to a layer region that is closest to the free surface of the electrophotographic photosensitive member have been stopped from growing at the surface of that layer region in which the protuberances occur. The protuberances has been stopped from growing not to become so large as to appear as image defects on images. Also disclosed is a process for producing such an electrophotographic photosensitive member.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A press-fitting unit includes a vertically movable press blade for press-fitting an electrical wire to a terminal disposed in a press-fit-type terminal of a connector. A connector retaining bar, movable in a horizontal direction, is disposed to be opposed to the press blade. The retaining bar is provided with a plurality of connector receiving recesses in parallel to hold connectors with a press-fit terminal. A wire chuck is disposed so as to abut against a rear part of the press blade so that the chuck unitedly moves with the press blade. The wire chuck is horizontally movable to a side of the press blade.

Abstract: There is provided an electrophotographic method, in which influence on an image quality attributable to the conditions of the photoreceptor surface is reduced and much sharper and high image quality having high resolution is obtained, when a spot size of the exposure light is made finer as progress is made in high resolution. In a digital exposure system electrophotographic method of a BAE system which performs scan-exposing for an image formation on a photoreceptor, a photoreceptor comprising a supporting member 401 comprising aluminum or an aluminum alloy and a photosensitive layer 402 deposited on the supporting member surface by applying surface treatment using water on its surface, on which a convex structure is formed corresponding to a boundary portion of a crystal grain boundary of the supporting member surface is used.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A terminal mounting apparatus inserts press-fit terminals into a terminal housing for constituting a joint connector. The terminal mounting apparatus has a terminal positioning unit, a transfer unit, a carrier cutting unit, a tab bending unit, a separator, and an insertion unit. The terminal positioning unit adjusts spaces between adjacent ones of the terminals such that each of the terminals can enter one of the terminal insertion channels. The transfer unit transfers the terminals. The carrier cutting unit removes a desired joint portion jointing the terminals. The tab bending unit brings a desired contact tab, which can connect an upper one to a lower one of the terminals, into a connection state. The separator adjusts spaces between the terminals to correspond to spaces between terminal insertion channels. The insertion unit presses the terminals all at once into the terminal insertion channels.

Abstract: A press-fitting unit includes a vertically movable press blade for press-fitting a stripped end of an electrical wire to a terminal disposed in a connector. A connector retaining bar movable in a horizontal direction is disposed to be opposed to the press blade. The retaining bar is provided with a plurality of connector receiving recesses in parallel to respectively hold a connector with a press-fit terminal. A wire chuck is disposed so as to opposing to the rear part of the press blade. The wire chuck is horizontally movable along a horizontal guide to a side of the press blade so as to holding the wire. Alternatively, the connector retaining bar is fixed to the apparatus by a frame and a transfer mechanism can carry the press-fitting unit along the bar in a horizontal direction. In addition, the apparatus may have a pair or two pairs of the upper and lower symmetrical press-fitting units; and the connector retaining bar is disposed between the upper and lower press-fitting units.

Abstract: There are provided the steps of forming a tunnel insulating film on a semiconductor substrate, forming a first semiconductor film constituting a lower portion of a floating gate on the tunnel insulating film, forming device isolation recesses by etching device isolation regions on the first semiconductor film, the tunnel insulating film, and the semiconductor substrate, forming an device isolation insulating film in the device isolation recesses and on the first semiconductor film, removing the device isolation insulating film from an upper surface of the first semiconductor film and thinning the device isolation insulating film on the device isolation recesses, growing selectively a second semiconductor film serving as an upper portion of the floating gate on the first semiconductor film and growing the second semiconductor film on the device isolation insulating film to extend in the lateral direction, forming a dielectric film on the floating gate, and forming a conductive film serving as a control gate on

Abstract: A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

Abstract: A checking method is described for a wiring harness having first sub-harnesses and second sub-harnesses in which the first sub-harness has a first press-fit terminal joined to each end of a first electrical cable, and the first sub-harness has a first isolator holding the first press-fit terminal and the second sub-harness has a second press-fit terminal, a crimp terminal, a connector housing for accommodating the crimp terminal, a second isolator supporting the second press-fit terminal and wherein a second electrical cable connects the second press fit terminal and the crimp terminal at opposite ends. The checking method, which is effective upon layering of the first and second isolators includes the conduct of decision steps for determining acceptance or rejection of the individual sub-harnesses after assembly thereof and a final decision step for determining acceptance or rejection of the completed wiring harness layering following of the isolators of the first and second sub-harness.

Abstract: A pressure welding device for wiring and a wire harness manufacturing method are provided. The pressure welding device for wiring includes a pressure welding unit for pressure-welding wires to connectors and a wiring plate provided with wiring fittings and placed in a position toward which the wires are pulled from the pressure welding unit. The wiring plate and the pressure welding unit are movable in a wire pulling direction. Wires are pressure-welded to one connector by the pressure welding unit. As the connector is pulled toward the wiring plate so as to hook the wires by predetermined wiring fittings. The wires are then pressure-welded to the other connector. After the wires are pressure-welded to the other connector, a continuity test of the wire harness is conducted on the wiring plate. After the wiring, the wiring plate and the pressure welding unit are moved in a wire pulling direction so as to eliminate the slack of the wires.

Abstract: A sub-harness and a sub-harness manufacturing apparatus including a pair of connecting units each having a wire connecting portion, made of metal, vertically movable so as to connect one end of one of a plurality of wires composing a sub-harness to one of a plurality of terminals having a sheathing clamping portion and being arranged in a wire feeding direction; and a pair of transferring devices to transfer the terminals in a direction perpendicular to the wire feeding direction so as to position each one of the plurality of terminals under each wire connecting portion. A clamping punch portion is provided on the wire connecting portion of each of the pair of connecting units for clamping the sheathing clamping portion and a conductivity testing device is arranged between the clamping punch portions of the pair of connecting units for judging whether the one of the plurality of wires having terminals on the respective ends thereof is good or bad.