Abstract: It is an object to provide a technique capable of suppressing a damage on a semiconductor channel layer due to a process of forming a source electrode and a drain electrode and also suppressing a short channel effect. A thin film transistor includes a gate electrode, a first insulating film, a source electrode, a drain electrode, a second insulating film, and a semiconductor channel layer that includes an oxide semiconductor. The second insulating film is disposed on the first insulating film, the source electrode, and the drain electrode. The semiconductor channel layer is electrically connected to the source electrode and the drain electrode via a first contact hole and a second contact hole provided in the second insulating film.

Abstract: A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Abstract: A thin-film transistor substrate constituting a liquid crystal display includes: a thin-film transistor including, a gate electrode, a gate insulating film covering the gate electrode, a semiconductor layer opposing the gate electrode via the gate insulating film, a channel protective film covering the semiconductor layer, a protective film covering over the channel protective film, source and drain electrodes in contact with the semiconductor layer through first contact holes penetrating through the protective film and the channel protective film; a first electrode electrically connected to the drain electrode; a gate wiring extending from the gate electrode; and a source wiring electrically connected to the source electrode. The source wiring and first electrode are respectively electrically connected to the source electrode and drain electrode through respective second contact holes penetrating through the protective film.

Abstract: A thin-film transistor substrate constituting a liquid crystal display includes: a thin-film transistor including, a gate electrode, a gate insulating film covering the gate electrode, a semiconductor layer opposing the gate electrode via the gate insulating film, a channel protective film covering the semiconductor layer, a protective film covering over the channel protective film, source and drain electrodes in contact with the semiconductor layer through first contact holes penetrating through the protective film and the channel protective film; a first electrode electrically connected to the drain electrode; a gate wiring extending from the gate electrode; and a source wiring electrically connected to the source electrode. The source wiring and first electrode are respectively electrically connected to the source electrode and drain electrode through respective second contact holes penetrating through the protective film.

Abstract: Provided is granular pet food for cats which has a product water of 10% to 30% by mass, including: food granules, each of which contains a humectant and has a coating layer on a surface or in the vicinity of the surface thereof, in which the coating layer contains vegetable fats and oils having an iodine value of 100 or less.

Abstract: Provided is a pet food packaging, in which an amount of granular pet food to be used in one occasion is sealed in a packaging material having a heat resistance and gas barrier properties, and an oxygen absorber having a heat resistance is also sealed therein.

Abstract: Provided is a feeding method including: heating granular pet food 2 to a temperature range of 30° C. to 70° C. and feeding the granular pet food to a pet.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.

Abstract: A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape.

Abstract: A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.

Abstract: An oxide semiconductor film and an oxide conductive film are stacked to form a semiconductor layer. The oxide conductive film is made of a material by which the oxide conductive film is etched at a higher speed than the oxide semiconductor film for example with a PAN chemical containing phosphoric acid, nitric acid, and acetic acid. A source electrode and a drain electrode are electrically connected to the oxide semiconductor film through the oxide conductive film at least at an end portion of the source electrode and an end portion of the drain electrode facing each other. A channel region made of the oxide semiconductor film is formed between the source electrode and the drain electrode. The oxide semiconductor film has a substantially tapered shape in cross section at an end face thereof.

Abstract: Provided is a method of producing pet food in which food granules of at least two colors are mixed together, including: a food granule producing process of producing food granules of at least two colors and a mixing process of mixing the food granules of at least two colors, in which the food granule producing process includes a powder raw ingredient mixing process of mixing together powder raw ingredients to obtain mixed powder, an extruding and granulating process of supplying the mixed powder to an extrusion granulator to continuously produce food granules, and a coloring process of performing coloring by adding an additive solution that contains a coloring component to the extrusion granulator, and the mixing process includes a process of sequentially putting the food granules of at least two colors into a tank to be layered and a process of discharging the food granules from the bottom of the tank to obtain a mixture of the food granules of at least two colors.

Abstract: A method of producing granular pet food including a step of granulating food granules; and a step of adhering a coating solution that contains water, oils and fats, a palatability enhancer, and an emulsifier to the food granules.

Abstract: Provided is a method for producing granular pet food including: a powder raw ingredient mixing step of mixing powder raw ingredients to obtain mixed powder; a liquid addition step of adding aqueous raw ingredients and oils and fats to the mixed powder; and a granulation step of granulating the raw ingredient mixture that contains the mixed powder, the aqueous raw ingredients, and the oils and fats after the liquid addition step, in which the liquid addition step includes an emulsion preparation step of preparing an emulsion that contains the aqueous raw ingredients, the oils and fats, and an emulsifier in advance, and the emulsion is added to the mixed powder.

Abstract: Provided is a novel double-sided adhesive sheet for image display device which can be bonded to the adhesion surface in close contact without space therebetween although there is a step due to printing or the like on the adhesion surface to be bonded to the adhesive sheet. The double-sided adhesive sheet for image display device 1 of the invention is a sheet to bond any two adherends selected from a surface protective panel 2, a touch panel 3, and an image display panel, and the sheet is characterized in that at least one of the adherends (surface protective panel 2) has a stepped portion 2b on an adhesion surface 2a to adhere to the double-sided adhesive sheet 1 and the surface shape of the bonding surface 1a of the double-sided adhesive sheet 1 to be bonded to the adhesion surface 2a is shaped in accordance with the surface shape of the adhesion surface 2a.