Abstract: A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

Abstract: An electronic component includes: a substrate; a functional element located on the substrate; a wiring located on the substrate and electrically connected to the functional element; a metal ceiling located above the functional element so that a space is formed between the metal ceiling and the functional element; and a sealing portion located on the metal ceiling, wherein the metal ceiling is electrically connected to a signal wiring that is included in the wiring and transmits a high-frequency signal.

Abstract: An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape.

Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Abstract: A method for manufacturing an acoustic wave device includes: adhering wafer-shaped first and second piezoelectric substrates to a front face of a first and second adhesive sheet respectively and dividing the first and the second piezoelectric substrates into rectangles; adhering a third and fourth adhesive sheet to the first and second piezoelectric substrates respectively and moving at least one divided portions of the first and second piezoelectric substrates selectively to the third and fourth adhesive sheet respectively; moving the first piezoelectric substrate on the first adhesive sheet to the fourth adhesive sheet; and moving the second piezoelectric substrate on the second adhesive sheet to the third adhesive sheet.

Abstract: A production method of an electronic component includes: forming a sheet having a resin layer and a metal layer formed under the resin layer; bonding the sheet to a substrate so that the metal layer is arranged on a functional portion of an acoustic wave element formed on the substrate, a frame portion surrounding the functional portion is formed between the metal layer and the substrate, a cavity is formed on the functional portion by the metal layer and the frame portion, and the resin layer covers the metal layer and the frame portion.

Abstract: An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid polymer.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

Abstract: A development server for more easily creating an image having a quality of image matching the desire and preference of the user from image data such as RAW data from which the user cannot develop.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Abstract: A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.

Abstract: An acoustic wave element includes: resonators 2 each including an electrode to excite acoustic waves; a power supply wiring portion 3 that is disposed so as to connect the resonators 2 electrically; a piezoelectric substrate 4 on which the resonators 2 and the power supply wiring portion 3 are formed; a second medium 5 that is formed on the piezoelectric substrate 4 so as to cover the resonators 2; and a third medium 6 that is formed on the piezoelectric substrate 4 so as to cover at least the second medium 5 and the power supply wiring portion 3. A side surface 34 of the power supply wiring portion 3 that is in contact with a surface of the piezoelectric substrate 4 forms an obtuse first angle ? with respect to the surface 4a of the piezoelectric substrate 4.

Abstract: An acoustic wave filter includes: a substrate; resonators that are arranged on the substrate and excite acoustic waves; a ground terminal on the substrate; interconnection lines interconnecting the resonators and connecting predetermined ones of the resonators to the ground terminal; and a shield electrode disposed so as to be close to and face the interconnection lines.

Abstract: Provided is a 3D image display method by which a viewer can more comfortably view a 3D image using an image stream for 3D viewing. The 3D image display method is a method used in a 3D image display device for displaying a 3D image from an image stream for 3D viewing including an image for a left eye and an image for a right eye, using a screen and 3D viewing glasses.

Abstract: In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.

Abstract: It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

Abstract: A duplexer includes a transmit filter connected between a common terminal and a transmission terminal, a receive filter connected between the common terminal and a reception terminal, a capacitor connected in parallel with one of the transmit filter and the receive filter and provided between two terminals of the common terminal, the transmission terminal, and the reception terminal, and a package. The package includes an insulating layer, foot pads that include the common terminal, the transmission terminal and the reception terminal and are formed on one surface of the insulating layer, and interconnections formed on another surface opposite to the one surface of the insulating layer. The capacitor is composed of two capacitor forming units that are connected in parallel with each other and are formed with at least one foot pad of the foot pads and two of the interconnections that overlap with two opposing sides of the at least one food pad respectively.

Abstract: A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate 1, resonators 2a and 2b that include a comb-shaped electrode formed on the piezoelectric substrate 1, a wiring portion 3 that is connected to the comb-shaped electrode, and a dielectric layer 4 formed to cover the comb-shaped electrode. The wiring portion 3 is provided with a lower layer wiring portion 3d that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion 3e that is disposed on the lower layer wiring portion 3d. The upper layer wiring portion 3e includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion 3d.

Abstract: An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10?2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.