Abstract: A substrate electrode having a plurality of substrate holders capable of causing a substrate to tilt by an arbitrary angle .theta. relative to the horizontal plane is provided. A plurality of auxiliary electrodes are arranged substantially vertically below the substrate electrode and between the substrate electrode and a target. The substrate electrode and the auxiliary electrodes are electrically insulated from the target. Bias voltage applied to the substrate electrode and the auxiliary electrodes causes the plasma boundary between the cathode dark space and the negative glow to form a cathodic plasma space having a parabolic section, thus forming a crystal-oriented thin film on the substrate surface.

Abstract: A thin-film transistor of an inverted-staggered structure includes a semiconductor layer with a channel portion, a protective insulating film extending on the channel portion of the semiconductor layer, a source electrode, and a drain electrode. The protective insulating film has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlaps one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.