Abstract: A data compression apparatus has a characterizing point extracting part 1 which extracts data expressing characterizing points included in a plurality of data showing a result of carrying out simulation, quantized data generating part 2 which generates quantized data obtained by quantizing data except for data expressing characterizing points, and file number converting part 3 which converts the same types of quantized data including in the quantized data, into a relating file number. In the case of compressing data, data except for the characterizing points is compressed. If the same quantized data is included at the same address location in the previously-compressed file, the quantized data is replaced with the file number of previously-compression file, thereby compressing data at high efficiency.

Abstract: There is disclosed a method comprising: calculating a band gap narrowing of a semiconductor and an ionization rate of an impurity in an equilibrium state; calculating a movable electric charge density contributing to transportation of an electric charge inside the semiconductor by solving a Poisson equation and a movable electric charge continuous equation based on the calculated ionization rate in the equilibrium state; calculating said band gap narrowing and said ionization rate in a non-equilibrium state, taking presence of a potential into consideration, based on the calculated movable electric charge density; and repeating the calculation of the movable electric charge density by solving the Poisson equation and the movable electric charge continuous equation based on the ionization rate and the band gap narrowing in said non-equilibrium state, and the calculation of said band gap narrowing and said ionization rate based on the calculation result, until the ionization rate and the band gap narrowing in s

Abstract: The present invention comprises a SCM measuring apparatus and a control section. A control section adjusts shape data of a probe tip initially inputted based on SCM measurement for a standard specimen and a simulated result by the measuring apparatus, and then performs the SCM measurement by a standard specimen, and then on the basis of the measuring result, a impurity distribution is assumed. Next, the impurity distribution is adjusted so that the CV property calculated by the SCM simulation coincides with the CV property measured by the SCM measuring apparatus, and then the CV property is calculated again. The impurity distribution in case both of the CV properties coincide with each other is determined as a definitive impurity distribution. The definitive impurity distribution is outputted to a display apparatus, a printer, and so on. Therefore, it is possible to analyze the impurity distribution with accuracy smaller than a width of the probe tip.

Abstract: A &Dgr;Z calculator calculates difference between an inversion layer capacitance by a classical theory and an inversion layer capacitance by a quantum theory, calculates &Dgr;Z which is a thickness of a semiconductor substrate equivalent to the difference in inversion layer capacitance. A discretization mesh generator generates a Delaunay discretization mesh for a structure of the semiconductor device to be evaluated. An electrical parameter calculator calculates electrical parameters of the semiconductor device under constraint that a charge density of channel conductivity type of the semiconductor device is set to zero at discretization mesh points of the discretization mesh on an interface between an insulating film and the semiconductor substrate and at discretization mesh points of the discretization mesh in the semiconductor substrate which are located within a distance less than the stored &Dgr;Z from the interface between the insulating film and the semiconductor substrate.

Abstract: A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such as a DRAM using these transistors as switching transistors can be improved, and further a reliability of a gate oxide film in a transfer gate can be improved. More particularly, a narrow band gap semiconductor region such as Si.sub.x Ge.sub.1-x, Si.sub.x Sn.sub.1-x, PbS is formed in an interior of a source region or a drain region in the SOI.IG-device. By selecting location and/or mole fraction of the narrow band gap semiconductor region in a SOI film, or selecting a kind of impurity element to compensate the crystal lattice mismatching due to the narrow-bandgap semiconductor region, the generation of crystal defects can be suppressed.