Abstract: An acoustic thin film resonator including: a first piezoelectric thin film 101; a pair of primary electrodes 103 and 104 for applying an electric signal, which are formed on the first piezoelectric thin film; a second piezoelectric thin film 102 that is disposed so that an oscillation generated in the first piezoelectric thin film propagates to the second piezoelectric thin film; a pair of secondary electrodes 104 and 105 for outputting an electric signal, which are formed on the second piezoelectric thin film; a load 108 that is connected between the secondary electrodes; and a control portion 109 that controls a value of the load. Thereby, an acoustic thin film resonator element is formed so that an electric signal inputted from the primary electrodes is outputted from the secondary electrodes by a piezoelectric effect, and a resonant frequency and an antiresonant frequency are made variable through the control of the value of the load.

Abstract: Generating efficiency of a vibration power generating device, which generates power by vibration in the biaxial direction, is improved. The vibration power generating device is provided with: a first substrate (101) and a second substrate (106); a first electrode (104) formed on the first substrate; a fixed structural body (103); elastic structural bodies (102X, 102Y) which connect the first substrate and the fixed structural body with each other; and a second electrode (105) formed on the second substrate. Since the overlapping area of the electrodes is increased by arranging rectangular or square conductor parts (104a) of the first electrode and rectangular or square conductor parts (105a) of the second electrode in a checkerboard pattern, a generation region where power is generated by vibration is increased.

Abstract: A film bulk acoustic wave resonator including a piezoelectric body 1, and a first electrode 2 and a second electrode 3 that are provided respectively on the main surfaces of the piezoelectric body, the piezoelectric body being applied an electric field through the first and the second electrodes so as to generate a resonant vibration. A first mass load material portion 4 having an annular shape is provided outside the planar region of the first electrode on the main surface of the piezoelectric body, a mass load effect thereof being larger than that of the first electrode. The outer periphery of the first electrode and the inner periphery of the first mass load material portion are spaced apart from each other, whereby the first electrode and the first mass load material portion are electrically insulated from each other. The first mass load material portion has a laminated structure including a first auxiliary electrode layer 2a and a load material layer 4a formed on the auxiliary electrode layer.

Abstract: A digital television broadcast receiving section (100) of a mobile telephone terminal includes an antenna (101), a notch filter (102), a low-pass filter (LPF) (103), a low noise amplifier (LNA) (104), a receiving IC (105), a control section (107), and an input section (108). A passband for digital television broadcast is divided into several parts. The control section (107) switches a characteristic of each of the notch filter (102) and the LPF (103) so as to combine filters appropriate for a low-band channel or a high-band channel. Thus, frequencies in a mobile telephone transmission frequency band of the mobile telephone terminal, and frequencies in a band of other systems, the frequencies in these band being interfering waves, are largely attenuated, and at the same time, frequencies in the passband which is a frequency band for digital television broadcast are allowed to pass with low loss.

Abstract: One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.

Abstract: A dual mode piezoelectric filter includes a piezoelectric material layer composed of a piezoelectric thin film of the high-cut type formed on a substrate, a first electrode and a second electrode formed on one of the major surfaces of the piezoelectric material layer with a gap provided therebetween, a third electrode formed on the other major surface of the piezoelectric material layer opposite to the first electrode, the second electrode, and the gap, and an interelectrode mass load element formed in the gap or at a position opposite to the gap on a surface of the piezoelectric material layer. The relationships (?1×h1)?(?a×ha) and (?2×h2)?(?a×ha) are satisfied, where h1 is the thickness and ?1 is the density of the first electrode, h2 is the thickness and ?2 is the density of the second electrode, and ha is the thickness and ?a is the density of the interelectrode mass load element. A filter characteristic with a smooth passband and low losses is obtained.

Abstract: A first supporting section provided between a substrate section and a second supporting section. The first supporting section is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body and the substrate section, or a film formed from a material having a smaller Q value than the piezoelectric body and substrate section. By inserting the first supporting section, most vibration from the second supporting section toward the substrate section is reflected, and also a vibration having been transmitted to the substrate section from the second supporting section is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section.

Abstract: One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.

Abstract: Three or more piezoelectric resonators having resonance frequencies different from one another are realized on the same substrate. First through third frequency adjustment layers of first through third piezoelectric resonators, respectively, provided on the same substrate 101 are formed by varying, among the frequency adjustment layers, the ratio of area (depressions 109 and 110) to be etched to area not to be etched.

Abstract: A piezoelectric filter of the present invention is provided with first and second piezoelectric vibrators, each having a substrate, a lower load film formed on the substrate, a lower electrode formed on the lower load film, a piezoelectric element formed on the lower electrode, an upper electrode formed on the piezoelectric element and an upper load film formed on the upper electrode, and the piezoelectric filter is configured by electrically connecting the first and second piezoelectric vibrators to each other, and the piezoelectric element of the first piezoelectric vibrator and the piezoelectric element of the second piezoelectric vibrator correspond to respectively different areas of the same piezoelectric element; thus, the resonance frequencies of the first and second piezoelectric vibrators are adjusted by the respective lower load films and upper load films of the first piezoelectric vibrator and the second piezoelectric vibrator so that the resonance frequencies of the first and second piezoelectric

Abstract: An upper electrode (50) includes a first electrode (51) formed in a circle and a second electrode (52) formed in an annulus outside the first electrode (51). The first electrode (51) and the second electrode (52) are electrically separated from each other via an insulating region. A lower electrode (30) includes a third electrode (31) formed in a circle and a fourth electrode (32) formed in an annulus outside of the third electrode (31). Similarly, the third electrode (31) and the fourth electrode (32) are electrically separated from each other via an insulating region. Further, the third electrode (31)is provided so as to face the first electrode (51) via the piezoelectric body (40) and the fourth electrode (32) is provided to face the second electrode (52) via the piezoelectric body (40), respectively.

Abstract: A piezoelectric filter comprises a substrate and a plurality of piezoelectric resonators provided on the same substrate. Each piezoelectric resonator comprises a cavity formed in the substrate, a lower electrode formed on the substrate, covering the cavity, a piezoelectric material layer formed on the lower electrode, and an upper electrode formed on the piezoelectric material layer. At least one of the piezoelectric resonators has a cavity formed of a plurality of cells.

Abstract: A high frequency filter includes an inductor, a serial resonance circuit including an inductor and capacitors, a serial resonance circuit including an inductor and capacitors, and a varactor diode connected between a connection point between the capacitor and the capacitor and a connection point between the capacitor and the capacitor. A controller simultaneously changes two attenuation pole frequencies of the filter device by changing a capacitance of the varactor diode.

Abstract: An acoustic resonator includes a substrate, a support section provided on the substrate, a lower electrode provided on the support section, a piezoelectric body provided on the lower electrode, and an upper electrode provided on the piezoelectric body. The lower electrode, the piezoelectric body and the upper electrode form a vibration section. The support section for supporting the vibration section is shaped such that at least one portion of a vertical cross-section thereof has a curvature.

Abstract: A micromachine switch of the present invention is a micromachine switch for switching an electrical connection between signal electrodes in accordance with control signals from outside which include: a first control signal for electrically connecting the signal electrodes between which a signal is to be passed; and a second control signal for disconnecting the electrical connection between the signal electrodes.

Abstract: An acoustic thin film resonator including: a first piezoelectric thin film 101; a pair of primary electrodes 103 and 104 for applying an electric signal, which are formed on the first piezoelectric thin film; a second piezoelectric thin film 102 that is disposed so that an oscillation generated in the first piezoelectric thin film propagates to the second piezoelectric thin film; a pair of secondary electrodes 104 and 105 for outputting an electric signal, which are formed on the second piezoelectric thin film; a load 108 that is connected between the secondary electrodes; and a control portion 109 that controls a value of the load. Thereby, an acoustic thin film resonator element is formed so that an electric signal inputted from the primary electrodes is outputted from the secondary electrodes by a piezoelectric effect, and a resonant frequency and an antiresonant frequency are made variable through the control of the value of the load.

Abstract: A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.

Abstract: A piezoelectric resonator comprises a piezoelectric material layer 101, a first electrode 102 formed on one major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101, and a second electrode 103 formed on the other major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101.

Abstract: An upper electrode (50) includes a first electrode section (51) formed in a circle and a second electrode section (52) formed in an annulus outside of the first electrode section (51). The first electrode section (51) and the second electrode section (52) are electrically separated from each other via an insulating region and have shapes of a circle and an annulus which are concentric. A lower electrode (30) includes a third electrode section (31) formed in a circle and a fourth electrode section (32) formed in an annulus outside of the third electrode section (31). Similarly, the third electrode section (31) and the fourth electrode section (32) are electrically separated from each other via an insulating region and have shapes of a circle and an annulus which are concentric.

Abstract: A piezoelectric resonator of the present invention is structured such that on a substrate 5 having a cavity 4 formed therein, a lower electrode 3, a piezoelectric body 1, a spurious component control layer 16, and an upper electrode 2 are formed in this order from bottom up. The spurious component control layer 16 is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezo electric material. By additionally providing the spurious component control layer 16, it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.