Abstract: A surface acoustic wave device which occupies a small mounting area and has a low profile, yet having an improved reliability, and can be made available at low cost. The surface acoustic wave device comprises a piezoelectric substrate, a function region formed of comb-like electrodes for exciting surface acoustic wave provided on a main surface of the piezoelectric substrate, a space formation member covering the function region, a plurality of bump electrodes provided on a main surface of the piezoelectric substrate and a terminal electrode provided opposed to the main surface of piezoelectric substrate. The bump electrode and the terminal electrode are having a direct electrical connection, and a space between piezoelectric substrate and terminal electrode is filled with resin.

Abstract: A piezoelectric device of the present invention includes first and second piezoelectric resonators. The first piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on a substrate. The second piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on the substrate. A feature of the above-structure piezoelectric device is that the piezoelectric layers, have the same film thickness, and the depth of the cavity of the first piezoelectric resonator is different from the depth of the cavity of the second piezoelectric resonator.

Abstract: An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a ?/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a ?/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.

Abstract: A piezoelectric resonator includes a substrate, a lower electrode provided on or above the substrate, a piezoelectric member provided on or above the lower electrode, an upper electrode provided on or above the piezoelectric member, and a cavity provided below a vibration member including the lower electrode, the piezoelectric member, and the upper electrode. In a case where a resonance frequency of vibration with a thickness of the vibration member being a half of a wavelength is taken as fr1, an average of ultrasonic velocity in a material forming the cavity is taken as Vc2, and a value determined based on the resonance frequency fr1 and the average of ultrasonic velocity Vc2 is ?c (=Vc2/fr1), a depth t2 of the cavity is set as, ( 2 ? n - 1 ) × ? ? ? c 4 - ?c 8 ? t2 ? ( 2 ? n - 1 ) × ? ? ? c 4 + ? ? ? c 8 , where n is an arbitrary natural number.

Abstract: A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.

Abstract: A piezoelectric element of the present invention includes a substrate, a lower electrode layer, a piezoelectric layer, an upper electrode layer, a cavity portion formed below a piezoelectric vibrating portion, and at least two bridging portions. The at least two bridging portions are formed so as not to be line-symmetric with respect to any line segment traversing the piezoelectric vibrating portion and/or so as not to be point-symmetric with respect to any point in the piezoelectric vibrating portion in a projection of the piezoelectric vibrating portion in the laminating direction.

Abstract: A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.

Abstract: A complex RF device is provided which is composed of two RF circuits stacked vertically. The complex RF device comprises a substrate, a second RF circuit provided on the substrate, and a first RF circuit which is provided on the second RF circuit and does not require a substrate. The first RF circuit is formed on another substrate before being transferred onto the second RF circuit.

Abstract: An upper electrode 103 is provided on one main surface of a piezoelectric layer 101, and a lower electrode 102 is provided on the other main surface thereof. A vibration section 104 is an area in which the lower electrode 102, the piezoelectric layer 101 and the upper electrode 103 overlap in a vertical projection direction. Line electrodes 108 for respectively connecting the lower electrode 102 and the upper electrode 103 to input/output electrodes 107 are provided on the one main surface and the other main surface of the piezoelectric layer 101. The vibration section 104 is placed on (connected to) the substrate 105 via the support section 109. The support section 109 is provided on an area of the piezoelectric layer 101 excluding the area on which the vibration section 104 is provided and the area on which the input/output electrodes 107 and the line electrodes 108 are provided.

Abstract: An electronic component includes a substrate; a piezoelectric material layer supported directly or indirectly by the substrate; a first electrode arranged on a surface of the piezoelectric material layer on an opposite side of the substrate; and a second electrode arranged on a surface of the piezoelectric material layer on the substrate side. The piezoelectric material layer is sandwiched between the first electrode and the second electrode. The first electrode has a smaller surface area than the piezoelectric material layer. A portion where the piezoelectric material layer is exposed from the first electrode includes a portion that is thinner than a thickness of the piezoelectric material layer between the first electrode and the second electrode.

Abstract: An acoustic resonator according to the present invention includes a substrate 105, a support section 104 provided on the substrate 105, a lower electrode 103 provided on the support section 104, a piezoelectric body 101 provided on the lower electrode 103, and an upper electrode 102 provided on the piezoelectric body 101. The lower electrode 103, the piezoelectric body 101 and the upper electrode 102 form a vibration section 107. The support section 104 for supporting the vibration section 107 is shaped such that at least one portion of a vertical cross-section thereof has a curvature.

Abstract: A piezoelectric resonator comprises a piezoelectric material layer 101, a first electrode 102 formed on one major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101, and a second electrode 103 formed on the other major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101.

Abstract: An electronic component includes a substrate; a piezoelectric material layer supported directly or indirectly by the substrate; a first electrode arranged on a surface of the piezoelectric material layer on an opposite side of the substrate; and a second electrode arranged on a surface of the piezoelectric material layer on the substrate side. The piezoelectric material layer is sandwiched between the first electrode and the second electrode. The first electrode has a smaller surface area than the piezoelectric material layer. A portion where the piezoelectric material layer is exposed from the first electrode includes a portion that is thinner than a thickness of the piezoelectric material layer between the first electrode and the second electrode.

Abstract: A piezoeletric resonator includes: a substrate; a lower electrode formed on or above the substrate; a piezoeletric body formed on or above the lower electrode; an upper electrode formed on or above the piezoeletric body; and a cavity under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as ?c (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×?c/2??c/8 and equal to or smaller than n×?c/2+?c/8.

Abstract: A coupled FBAR filter 100 includes first and second input/output vibration portions110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.

Abstract: In a balanced/unbalanced type coupled FBAR filter 100, an area size of a first lower electrode 102 is generally equal to a total area size of second and third lower electrodes 104 and 106 and an area for isolating the second and third lower electrodes 104 and 106. An area size of a first upper electrode 103 is generally equal to a total area size of second and third upper electrodes 105 and 107 and an area for isolating the second and third upper electrodes 105 and 107. The third lower electrode 106 and the second upper electrode 105 are located to face each other, and the third upper electrode 107 and the second lower electrode 104 are located to face each other. Apart of the second lower electrode 104 and a part of the second upper electrode 105 are located to face each other.

Abstract: A series piezoelectric resonator is connected in series between an input terminal and an output terminal. A first electrode of a first parallel piezoelectric resonator is connected to a connection point between the input terminal and the series piezoelectric resonator, and a second electrode of the first parallel piezoelectric resonator is connected to a first terminal of a first inductor. A first electrode of a second parallel piezoelectric resonator is connected to a connection point between the series piezoelectric resonator and the output terminal, and a second electrode of the second parallel piezoelectric resonator is connected to a first terminal of a second inductor. Second terminals of the first and second inductors are grounded. An additional piezoelectric resonator is connected between the second electrode of the first parallel piezoelectric resonator and the second electrode of the second parallel piezoelectric resonator.

Abstract: A method for manufacturing an electric element built-in module including flip-chip mounting at least one electric element such as a semiconductor chip or a surface acoustic wave device on a wiring pattern, sealing the electric element with a thermosetting resin composition, and grinding or abrading the thermosetting resin composition and electric element from a side of the electric element opposite that of the wiring pattern. The method provides upper surfaces of the electric element and the thermosetting resin composition that are substantially flush with each other. The method provides an electric element built-in module suitable for high-density packaging with a reduced thickness without damaging the electric element and while maintaining mechanical strength.

Abstract: A thin film bulk acoustic resonator (507b) comprises a substrate (101b), an acoustic mirror layer (508b) provided on the substrate (101b), including a plurality of impedance layers (502b, 503b) alternatively having a high acoustic impedance and a low acoustic impedance, and a piezoelectric thin film vibrator (509b) provided on the acoustic mirror layer (508b), including a lower electrode (504b), a piezoelectric thin film (105b) and an upper electrode (506b). The sum of a thickness of the lower electrode (504b) and a thickness of the upper electrode (506b) is 5% or more and 60% or less of a whole thickness of the piezoelectric thin film vibrator (509b), and the thickness of the lower electrode (504b) is larger than the thickness of the upper electrode (506b).

Abstract: A piezoeletric resonator includes: a substrate; a lower electrode formed on or above the substrate; a piezoeletric body formed on or above the lower electrode; an upper electrode formed on or above the piezoeletric body; and a cavity under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as ?c (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×?c/2??c/8 and equal to or smaller than n×?c/2+?c/8.