Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor device includes two first switching elements mounted on a first die pad. Each of the two first switching elements includes a first control electrode connected to a first control lead by a first control connection member. The first control connection member includes a lead connector connected to the first control lead and electrode connectors connected between the lead connector and the first control electrodes of the first switching elements. The electrode connectors are equal in length. Thus, the connection members between the first control lead and the first control electrodes of the first switching elements are equal in length.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: Provided is a near-infrared ray absorbing composition containing at least a near-infrared absorber, a metal compound, and a solvent, wherein the near-infrared absorber contains a metal ion, and the metal compound is a compound having a structure represented by the following Formula (I), Formula (II), or Formula (III), M(OR1)n??Formula (I): Mn+(O?R2—O?)n??Formula (II): (OR3)n-mMn+(?OCOR4)m,??Formula (III): in the above Formulas (I), (II), and (III), M represents at least one metal element selected from the group consisting of titanium, zirconia, and aluminum; when M represents titanium or zirconia, n=4, m=1, 2, 3, or 4; when M represents aluminum, n=3, m=1, 2, or 3; R1 to R4 each independently represent an alkyl group having 1 to 30 carbon atoms, and R1 to R4 may further have a substituent.

Abstract: A semiconductor module includes a supporting substrate, a conductive substrate supported by the supporting substrate, a conductive bonding member provided between the supporting substrate and the conductive substrate, and a semiconductor element electrically bonded to an obverse surface of the conductive substrate and having a switching function. The conductive bonding member includes a metal base layer, a first layer, and a second layer. The first layer is provided between the base layer and the conductive substrate, and is in direct contact with the conductive substrate. The second layer is provided between the base layer and the supporting substrate, and is in direct contact with the supporting substrate.

Abstract: A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

Abstract: A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor module includes: a conductive substrate having an obverse surface and a reverse surface spaced apart in a thickness direction; a semiconductor element electrically bonded to the obverse surface and having a switching function; and a conducting member that forms a path of a main circuit current switched by the semiconductor element. The semiconductor element has a rectangular shape with four corners as viewed in the thickness direction. The conducting member includes a portion overlapping with the semiconductor element as viewed in the thickness direction. The conducting member do not overlap with at least three of the four corners of the semiconductor element.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A barrier film for electronic devices exhibiting and maintaining excellent water barrier property. The barrier film for electronic devices features a water permeability (23° C., RH50%) that is set to be not more than 10?4 g/m2/day and a water content that is maintained to be not more than 2000 ppm.

Abstract: Provided is a near-infrared absorbing composition comprising a near-infrared absorber and a solvent, wherein the near-infrared absorber contains at least one of the following component (A) or component (B), Component (A): a component composed of a phosphonic acid compound represented by the following Formula (I), two or more kinds of phosphoric acid ester compounds or sulfonic acid ester compounds having different structures, and copper ions; and Component (B): a component composed of a copper complex obtained by a reaction of a phosphonic acid compound represented by the following Formula (I), two or more kinds of phosphoric acid ester compounds or sulfonic acid ester compounds having different structures, and a copper compound, in Formula (I), R1 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a fluorinated alkyl group having 1 to 20 carbon atoms.

Abstract: A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.