Abstract: There are provided a projection image-displaying member, a windshield glass, and a head-up display system in which both high visible light transmittance and good tint of a screen image displayed are achieved. The projection image-displaying member has a selectively reflecting layer that wavelength-selectively reflects light. The selectively reflecting layer has a maximum reflectivity in a wavelength range of 700 to 850 nm at an incidence angle of 5° and has a peak with a reflectivity of 15% or more in a wavelength range of 470 to 540 nm. The selectively reflecting layer further has two or more peaks of reflectivity in a wavelength range of 540 to 700 nm.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: A rocker molding includes a vertical wall portion provided under a rocker in a vehicle upper-lower direction, a bottom wall portion extending from a lower end portion of the vertical wall portion to an outer side in a vehicle width direction, and a side wall portion extending upwardly in the vehicle upper-lower direction from an outer end portion of the bottom wall portion in the vehicle width direction. A sound absorbing material is provided in a penetrating portion that is provided in a grange from a portion of the vertical wall portion to an inner portion of the bottom wall portion in the vehicle width direction.

Abstract: A planar antenna includes a planar radiation conductor 11, a common ground conductor 32, a first strip conductor 21 located between the planar radiation conductor 11 and the common ground conductor 32 and extending in a direction in parallel to a first axis in a first right rectangular coordinate system including first, second, and third axes, a second strip conductor 22 located between the planar radiation conductor and the common ground conductor and extending in a direction orthogonal to a direction of extension of the first strip conductor, and at least one pair of passive conductors 12 to 15 each including a side at an angle of 45±3° or ?45±3° with respect to the first axis and opposed to the planar radiation conductor.

Abstract: The disclosure provides a semiconductor device. The device includes first and second substrates, first mounting layers, second mounting layers, power supply terminals, an output terminal, electroconductive coupling members and switching elements. The first substrate has first obverse and reverse surfaces facing in a thickness direction. The second substrate has a second obverse surface facing as the first obverse surface faces in the thickness direction and a second reverse surface facing away from the second obverse surface. The second substrate is spaced from the first substrate in a first direction crossing the thickness direction. The first mounting layers are electrically conductive and disposed on the first obverse surface. The second mounting layers are electrically conductive and disposed on the second obverse surface. The power supply terminals are electrically connected to the first mounting layers. The output terminal is connected to one of the second mounting layers.

Abstract: An abrasion-resistant steel plate comprises: a chemical composition containing, in mass %, C: 0.20% to 0.45%, Si: 0.01% to 1.0%, Mn: 0.3% to 2.5%, P: 0.020% or less, S: 0.01% or less, Cr: 0.01% to 2.0%, Ti: 0.10% to 1.00%, B: 0.0001% to 0.0100%, Al: 0.1% or less, N: 0.01% or less, and a balance consisting of Fe and inevitable impurities; and a microstructure in which a volume fraction of martensite is 90% or more, and a prior austenite grain size is 80 ?m or less, wherein a number density of TiC precipitate having a size of 0.5 ?m or more is 400 particles/mm2 or more, and a Mn content [Mn] and a P content [P] in a plate thickness central segregation area satisfy 0.04[Mn]+[P]<0.50.

Abstract: An abrasion-resistant steel plate comprises: a specific chemical composition; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size in a plate thickness central part at the mid-thickness of the abrasion-resistant steel plate is 80 ?m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 460 to 590 HBW 10/3000 in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]<0.50.

Abstract: An abrasion-resistant steel plate that can achieve both gas cutting cracking resistance and abrasion resistance at low cost is provided. An abrasion-resistant steel plate comprises: a chemical composition containing, in mass %, C: more than 0.34% and 0.50% or less, Si: 0.01% to 1.0%, Mn: 0.30% to 2.00%, P: 0.015% or less, S: 0.005% or less, Cr: 0.01% to 2.00%, Al: 0.001% to 0.100%, N: 0.01% or less, and a balance consisting of Fe and inevitable impurities; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size at the mid-thickness of the abrasion-resistant steel plate is 80 ?m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 560 HBW 10/3000 or more in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]<0.45.

Abstract: An abrasion-resistant steel plate comprises: a specific chemical composition; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size at the mid-thickness of the abrasion-resistant steel plate is 80 ?m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 360 to 490 HBW 10/3000 in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]<0.55.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: The fluorescent light source device according to this invention includes: a light-emitting device emitting blue excitation light; a wavelength conversion device excited by the excitation light and producing yellow fluorescence; and a first dichroic mirror including a region that reflects or transmits the excitation light and a region that transmits or reflects the fluorescence and partial excitation light that was not converted by the wavelength conversion device. The fluorescent light source device mixes fluorescence and partial excitation light from the wavelength conversion device together and emits white light, and further includes an auxiliary light source emitting light in a blue region identical to that of the excitation light. Radiation light from the auxiliary light source is mixed with white light that is a mixture of the fluorescence and the partial excitation light from the first dichroic mirror.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: Provided are: an FRP sheet press molding method and device whereby yield can be improved without opening/closing adjustment of a mold after mold clamping; and an FRP molded article. The FRP sheet press molding method, whereby a press-molded article PM is molded using a fiber-reinforced plastic sheet material SM, comprises: a press step in which molds 2, 3 are closed and the heated sheet material SM is press-molded inside a cavity 5; and a filling step in which the closed state of the molds 2, 3 is maintained from the press step, a molten resin MP is pressure-injected into a gap IS that occurs between the sheet material SM and the cavity 5, and a surface of the sheet material SM and a surface of the molten resin MP are caused to come in contact with the cavity 5.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: Provided is a near-infrared ray absorbing composition including a near-infrared absorber and a solvent, wherein the near-infrared absorber contains at least one of the following component (A) and component (B); and a compound represented by Formula (I) is contained in the component (A) or component (B) in the range of 0.

Abstract: A sealing member used for absorbing the water in the interior of the organic electronic devices and for holding the interior of the devices in a dry state. The sealing member includes a laminate of a barrier sheet (5) provided with a metal foil (5a) and a moisture absorbing film (3).

Abstract: Disclosed is a near-infrared absorbing composition, including: a near-infrared absorbing agent; and a solvent, wherein the near-infrared absorbing agent includes at least one of the following Component (A) and Component (B): Component (A): a component composed of a compound having a structure of the following general formula (I) and a metal ion; Component (B): a component composed of a metal complex that is obtainable by a reaction of the compound having the structure of the following general formula (I) and a metal compound.

Abstract: Provided is a near-infrared ray absorbing composition containing at least a near-infrared absorber, a metal compound, and a solvent, wherein the near-infrared absorber contains a metal ion, and the metal compound is a compound having a structure represented by the following Formula (I), Formula (II), or Formula (III), M(OR1)n??Formula (I): Mn+(O?R2—O?)n??Formula (II): (OR3)n-mMn+(?OCOR4)m,??Formula (III): in the above Formulas (I), (II), and (III), M represents at least one metal element selected from the group consisting of titanium, zirconia, and aluminum; when M represents titanium or zirconia, n=4, m=1, 2, 3, or 4; when M represents aluminum, n=3, m=1, 2, or 3; R1 to R4 each independently represent an alkyl group having 1 to 30 carbon atoms, and R1 to R4 may further have a substituent.

Abstract: A barrier film for electronic devices exhibiting and maintaining excellent water barrier property. The barrier film for electronic devices features a water permeability (23° C., RH50%) that is set to be not more than 10?4 g/m2/day and a water content that is maintained to be not more than 2000 ppm.