Abstract: Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.

Abstract: The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

Abstract: Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.

Abstract: An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.

Abstract: An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

Abstract: The objective is to achieve an organic thin film transistor group that can be manufactured more easily and at a lower cost. Provided is a thin film active element group comprising a drive active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode; and a switch active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode, the switch active element switching the drive active element. The drive active element and the switch active element are formed to be separated from each other in a direction of a channel width such that a straight line associated with the channel region of the drive active element and a straight line associated with the channel region of the switch active element are parallel to each other.

Abstract: The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps.

Abstract: There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.

Abstract: The invention relates to an oven controlled crystal oscillator for surface mounting with reduced height (low profile). The oven controlled crystal oscillator for surface mounting comprises: a flat first substrate made of ceramic and on which are installed a crystal device and a heat resistor; and a second substrate made of a glass epoxy resin which is quadrangular in plan view and which faces the first substrate and has a larger external shape in plan view than the first substrate. The second substrate has an opening into whose center the crystal device is inserted, and has terminal sections on four locations corresponding to the surface outer periphery of the first substrate and the peripheral surfaces of the opening in the second substrate, and the terminal sections of the first substrate and second substrate are connected by solder.

Abstract: An oscillator that can suppress a solder crack caused by a temperature change by a simple structure at low cost and improve heat cycle resistance performance is provided. The oscillator includes an epoxy resin board and an electronic component mounted on the board. Two-terminal electrode patterns are formed on the board, and connected to terminal electrodes of the electronic component by solder. A projection is formed on each of the electrode patterns at a part connected to a corresponding terminal electrode to create a space between the terminal electrode and the electrode pattern, and the solder forms a fillet in the space. This contributes to enhanced adhesion strength of the solder.

Abstract: The present invention provides an organic EL device. The organic EL device is provided with a first substrate, an anode that is located on the first substrate, a light emitting layer that is located on the anode, a partition wall that is formed of an insulating material and partitions the light emitting layer, a cathode that covers the light emitting layer and extends on the partition wall, and a second substrate that is superimposed onto the first substrate via a seal member, and in this structure, the cathode has a multilayer structure including an electron injection layer that injects electrons to the light emitting layer, and at least one electrically conductive layer, and the electron injection layer covers the light emitting layer, and the at least one electrically conductive layer covers the electron injection layer.

Abstract: A low-price, compact oscillating device having a good temperature characteristic of a frequency intermediate between a temperature compensated crystal oscillator (TCXO) and an oven-controlled crystal oscillator (OCXO) is provided. The oscillating device having a TCXO is provided with a base on which the TCXO is mounted, that is formed into a box shape having a recess, with a plane area substantially equal to that of the TCXO; and a semiconductor chip including a temperature control circuit, a temperature sensor, and a heating element, mounted in the recess. An opening of the recess is provided in a surface opposite a surface in which the temperature compensated crystal oscillator is mounted, and sealed by a cover. A temperature of the TCXO can be kept constant to provide a oscillating device having an excellent temperature characteristic of a frequency compared with the single TCXO.

Abstract: Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.

Abstract: Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.

Abstract: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm?3 to 5×1020 cm?3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

Abstract: A constant-temperature type crystal oscillator includes: a crystal unit including a case main body including a first power source terminal on an outer bottom surface thereof; a surface-mounted oscillator; a temperature control circuit including a heating resistor and a temperature sensor; and a circuit substrate including a second power source terminal. One ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal. The first power source terminal of the surface-mounted oscillator and the one ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal of the circuit substrate. The first power source terminal of the surface-mounted oscillator is directly and electrically connected to, at least, the one end of the temperature sensor via an electrically-conducting path.

Abstract: The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps.

Abstract: An object of the invention is to provide an oscillator with a pedestal that facilitates soldering operations and offers a high level of productivity. A surface mount crystal oscillator with a pedestal comprises a crystal oscillator with lead wires led out from a bottom surface of a metallic base thereof; and a pedestal having a substantially rectangular outer shape in plan view, has insertion holes through which the lead wires pass, and is attached to a bottom surface of the crystal oscillator, and has mount terminals to be electrically connected to the lead wires formed on a bottom surface thereof. The configuration is such that the insertion holes are provided in four corner sections of the pedestal, in the four corner sections of the bottom surface of the pedestal where the insertion holes are formed there is provided a recess with an open outer periphery, and the lead wire is connected to a terminal electrode formed inside the recess, using solder.

Abstract: An oven-controlled crystal oscillator includes a circuit board, a crystal unit surface-mounted on the circuit board, and a temperature control circuit that maintains operating temperature of the crystal unit constant. The temperature control circuit includes a heating resistor, a power transistor that supplies power to a heating resistor, and a temperature sensitive resistor that detects temperature of the crystal unit. The heating resistor is formed, as a film resistor, on a surface of the circuit board in an area thereof in which the crystal unit is located. The temperature sensitive resistor is provided on the circuit board as a film resistor.

Abstract: The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.