Abstract: A film forming method according to a first embodiment includes a formation step of forming wiring in a groove and/or a hole formed in an insulating film containing fluorine by using wiring metal containing a dopant for preventing intrusion of the fluorine from the insulating film. The film forming method according to a first embodiment further includes a step of performing heat treatment after the wiring is formed, whereby a high concentration portion containing the dopant in a concentration higher than inside the wiring is formed on an interface of the wiring.

Abstract: The present invention relates to a polyester-based fiber for artificial hair obtained by melt spinning a polyester resin composition. The polyester resin composition includes 100 parts by weight of a polyester resin, 5 to 40 parts by weight of a brominated epoxy flame retardant, and 1.5 parts by weight or more and less than 7 parts by weight of an antimony oxide. The polyester resin is at least one kind of resin selected from the group consisting of polyalkylene terephthalate and a copolymerized polyester containing polyalkylene terephthalate as a main component. The polyester-based fiber for artificial hair has aggregates of the brominated epoxy flame retardant that are dispersed in the polyester resin in the form of islands, as viewed in the cross section of the fiber parallel to the fiber axis direction. The present invention also relates to hair ornament products including the polyester-based fiber for artificial hair and a method for producing the polyester-based fiber for artificial hair.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract: A polyester-based fiber for artificial hair of the present invention is a polyester-based fiber for artificial hair formed of a polyester resin composition. The polyester resin composition contains 5 to 40 parts by weight of a brominated epoxy flame retardant and 0.05 to 5 parts by weight of an acidic compound with respect to 100 parts by weight of a polyester resin. The polyester resin is one or more kind of resin selected from the group consisting of polyalkylene terephthalate and copolymerized polyester containing polyalkylene terephthalate as a main component. The acidic compound is an acidic phosphorus-based compound having a pH of 3.5 or less. A hair ornament product of the present invention contains the polyester-based fiber for artificial hair.

Abstract: The present invention relates to a fiber for artificial hair having a void in a center of a fiber cross section. A ratio of an area of the void to an entire area of the fiber cross section is 5% to 50%. The fiber cross section has a flat multilobed shape, and the void has a first side and a second side that are inclined 70 to 110 degrees relative to a major axis of the fiber cross section. The present invention also relates to hair ornament products including the above fiber for artificial hair. Thus, the present invention provides a fiber for artificial hair having a favorable curl setting property when curling with a hair iron and a favorable combing property after curling with a hair iron, and hair ornament products including the same.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: A polyester-based fiber for artificial hair of the present invention is a polyester-based fiber for artificial hair formed of a polyester resin composition. The polyester resin composition contains 5 to 40 parts by weight of a brominated epoxy flame retardant and 0.05 to 5 parts by weight of an acidic compound with respect to 100 parts by weight of a polyester resin. The polyester resin is one or more kind of resin selected from the group consisting of polyalkylene terephthalate and copolymerized polyester containing polyalkylene terephthalate as a main component. The acidic compound is an acidic phosphorus-based compound having a pH of 3.5 or less. A hair ornament product of the present invention contains the polyester-based fiber for artificial hair.

Abstract: The present invention relates to a polyester-based fiber for artificial hair obtained by melt spinning a polyester resin composition. The polyester resin composition includes 100 parts by weight of a polyester resin, 5 to 40 parts by weight of a brominated epoxy flame retardant, and 1.5 parts by weight or more and less than 7 parts by weight of an antimony oxide. The polyester resin is at least one kind of resin selected from the group consisting of polyalkylene terephthalate and a copolymerized polyester containing polyalkylene terephthalate as a main component. The polyester-based fiber for artificial hair has aggregates of the brominated epoxy flame retardant that are dispersed in the polyester resin in the form of islands, as viewed in the cross section of the fiber parallel to the fiber axis direction. The present invention also relates to hair ornament products including the polyester-based fiber for artificial hair and a method for producing the polyester-based fiber for artificial hair.

Abstract: An image taking apparatus is configured to obtain image data by taking an image of an object, recording the image data on a recording medium, and reproducing the image data recorded on the recording medium to display the image. The image taking apparatus includes a scale-up display unit configured to display a partial area of the image in an enlarged scale, a setting unit configured to selectively set a flag indicating a rating for the partial area displayed in the enlarged scale, and a storing unit configured to store, on the recording medium, the flag set for the partial area and position information representing a position of the partial area in relation to the image data.

Abstract: The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

Abstract: A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

Abstract: A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a?2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

Abstract: A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

Abstract: A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.