Abstract: What is provided is a new and improved metal-carbon fiber reinforced resin material composite in which the galvanic corrosion of dissimilar materials of a metal member is suppressed and electrodeposition coatability is excellent and a method for manufacturing the metal-carbon fiber reinforced resin material composite. A metal-carbon fiber reinforced resin material composite according to the present invention has a metal member, a resin coating layer disposed on at least a part of a surface of the metal member, and a carbon fiber reinforced resin material containing a matrix resin and a carbon fiber material present in the matrix resin, the resin coating layer contains any one or more kinds selected from the group consisting of metal particles, intermetallic compound particles, conductive oxide particles, and conductive non-oxide ceramic particles as conductive particles and further contains a binder resin, and the conductive particles have a powder resistivity at 23° C. to 27° C. of 7.

Abstract: To provide a metal-carbon fiber reinforced plastic material (CFRP) composite that has excellent adhesion and adhesion durability at a member interface and a method of producing a metal-CFRP composite. The metal-CFRP composite according to the present invention includes: a metal member; a CFRP layer; and one or two layers of coating layers provided between the metal member and the CFRP layer. In the case where the coating layer consists of one layer, the coating layer is a coating layer containing an isocyanate group, and the matrix resin contains a phenoxy resin as a main component thereof, contains an epoxy group, and has bonds represented in (a structural formula 1) in the vicinity of an interface between the CFRP layer and the coating layer.

Abstract: It is determined whether a traffic light is recognized in an image based on each of a result of a recognition operation by a traffic light first recognition unit (a recognition operation of the traffic light for an image acquired by a camera using a learned model based on pre-annotated data) and a result of a recognition operation by a traffic light second recognition unit (a recognition operation of the traffic light for an image acquired by the camera based on a feature amount of the traffic light). This makes it possible to sufficiently obtain the recognition accuracy of the traffic light, and to appropriately perform an instruction to a pedestrian according to the state of the traffic light.

Abstract: A semiconductor device includes a semiconductor part, first to third and control electrodes. The first electrode is provided on a back surface of the semiconductor part; and the second electrode is provided on a front surface thereof. The third electrode is provided between the first and second electrodes. The third electrode extends into the semiconductor part from the front surface side thereof. The third electrode is electrically insulated from the semiconductor part via an insulating space between the semiconductor part and the third electrode. The control electrode includes first and second portions. The first portion is linked to the second portion and extends between the semiconductor part and the third electrode. The second portion is provided between the second electrode and the third electrode. The first portion faces the insulating space via the third electrode; and the second portion extends between the insulating space and the second electrode.

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

Abstract: An agent for forming wings on gyoza dumplings that has a pH of not less than 8.3, can form large spreading wings, suppress frying unevenness in the wings and fried surfaces, and suppress unfried residues.

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

Abstract: Frozen gyoza dumplings that can afford a gyoza dumpling having good wings (gyoza dumpling with wing) that easily spread on a cooking device when heating with the cooking device, etc., do not easily break during peeling off from the cooking device after cooking, and do not easily soften when the gyoza dumpling is placed with the fried surface facing upward are provided by attaching a composition thereto in a frozen state, the composition containing a modified starch having a viscosity of less than 5 mPa·s as measured by method A defined in the present specification and a protein.

Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: An object of the present invention is to provide a soup base that can conveniently produce a soup containing a filling-wrapping dough sheet food as an ingredient and is provided with high quality. The present invention relates to a soup base containing a frozen filling-wrapping dough sheet food, and a frozen soup layer attached to at least a part of a surface of the frozen filling-wrapping dough sheet food, wherein a weight of the frozen soup layer is not less than 5 wt % and less than 120 wt % relative to that of the frozen filling-wrapping dough sheet food, and a salt concentration of the frozen soup layer is not less than 0.5 wt % and less than 15 wt %.

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

Abstract: The present invention relates to a fiber for artificial hair having a hollow in a center of a fiber cross section. A ratio of an area of the hollow to an entire area of the fiber cross section is 5% to 50%. The fiber cross section has a flat multilobed shape, and the hollow has a first side and a second side that are inclined 70 to 110 degrees relative to a major axis of the fiber cross section. The present invention also relates to hair ornament products including the above fiber for artificial hair. Thus, the present invention provides a fiber for artificial hair having a favorable curl setting property when curling with a hair iron and a favorable combing property after curling with a hair iron, and hair ornament products including the same.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.