Abstract: An object of the present invention is to provide a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing. By spinning an incompatible spinning solution, the above object can be achieved, and a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing can be provided.

Abstract: A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Abstract: An increased number of colors can be assorted in the down hair part of a step pile fabric more easily than before by carrying out dry heat treatment of a pile fabric comprising an acrylic shrinkable fiber that can be dyed in a specific low-temperature region. There is provided a step pile fabric obtained by treating a pile fabric comprising an acrylic shrinkable fiber, which comprises comprising an acrylic copolymer comprising 0.5 to 10 wt % of a sulfonic acid group-containing monomer, dyed at 55 to 85° C., with dry heat at 110 to 150° C. for 20 minutes or less, the acrylic shrinkable fiber having a shrinkage percentage of 18% or more calculated by the following formula (1): Shrinkage percentage (%)=100×(1?Sa/Sb)??(1) wherein Sb represents a pile length of the down hair component before the dry heat treatment, and Sa represents a pile length of the down hair part (component) after the dry heat treatment.

Abstract: The present invention relates to a process for preparing regenerated collagen fiber which comprises treating regenerated collagen fiber with a monofunctional epoxy compound and a metal aluminum salt, in which treatment with the monofunctional epoxy compound initiated by adding sodium hydroxide to become 0.001 to 0.8 N based on the treatment solution and inorganic salt in an amount so that water absorption of the obtained regenerated collagen fiber becomes at most 100%, depending on amount of sodium hydroxide added. Also, the present invention relates to a process for setting regenerated collagen fiber obtained by the above process which comprises thermally setting the fiber by means of wet heat treatment at 50° to 160° C. and drying treatment at 20° to 220° C.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film.

Abstract: Disclosed is an information processing apparatus having an input unit and a display unit and means for implementing a graphical user interface using the input unit and display unit, the apparatus including: an operation specifying unit that specifies a type of input operation performed by the input unit; a first processing unit that executes first processing associated with the type of input operation specified by the operation specifying unit; a processing re-designating unit that makes a designation in such a manner that processing different from the first processing, which has been executed by the first processing unit, is executed; and a second processing unit that executes second processing in accordance with the designation made by the processing re-designating unit, the second processing being different from the first processing and associated with the type of input operation specified by the operation specifying unit.

Abstract: A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.

Abstract: A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

Abstract: A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times.

Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

Abstract: With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

Abstract: An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.

Abstract: In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

Abstract: 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and isopropyl alcohol (IPA) are supplied to a chamber 12, and they are excited by plasma to generate molecular active species of these compounds. These active species are reacted in the vicinity of the surface of a substrate to form an insulating thin film with a thickness of, for example, 50 nm containing IPA molecules. Moreover, the IPA molecules contained in the thin film are selectively desorbed by plasma process using ammonium gas to form uniform holes in the thickness direction. The film forming process and the hole forming process are repeatedly executed by a plurality of times, thereby making it possible to obtain an insulating film with a predetermined thickness and holes formed uniformly.

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A substrate treatment device includes: a treatment chamber in which a substrate is to be placed; a supply system configured to supply at least two kinds of treatment gases into the treatment chamber; an exhaust system having a pump, configured to exhaust the treatment gases from the treatment chamber; and a capturing unit interposed between the treatment chamber and the pump and containing fine grains, configured to capture by the fine grains at least one kind of the treatment gas exhausted from the treatment chamber.

Abstract: The present invention relates to a process for preparing regenerated collagen fiber which comprises treating regenerated collagen fiber with a monofunctional epoxy compound and a metal aluminum salt, in which treatment with the monofunctional epoxy compound initiated by adding sodium hydroxide to become 0.001 to 0.8 N based on the treatment solution and inorganic salt in an amount so that water absorption of the obtained regenerated collagen fiber becomes at most 100%, depending on amount of sodium hydroxide added. Also, the present invention relates to a process for setting regenerated collagen fiber obtained by the above process which comprises thermally setting the fiber by means of wet heat treatment at 50° to 160° C. and drying treatment at 20° to 220° C.

Abstract: With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

Abstract: The present invention is designed to perform a primary crushing operation including hooking and crushing of the top face part of waste through cooperation of a supporting projection and a first crushing roller. The first crushing roller also conveys the waste. A secondary crushing operation includes crushing of a bottom face part and the top face part of the waste W, while lifting the waste is performed by the first crushing roller and a second crushing roller. And, a tertiary crushing operation including crushing of the object material, that is to be crushed, into small pieces and discharging of these pieces separately from the materials that are unfit for crushing is performed by the second crushing roller and a third crushing roller.