Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

Abstract: The tactile sense presentation method comprises: arranging a plurality of first electrodes covered with an insulating film on a same plane; arranging a plurality of second electrodes on a same plane with tops exposed to outside; and performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of the plurality of first electrodes to generate electric fields which are changed by the part of the plurality of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of the plurality of second electrodes to cause the electric currents to flow from the part of the plurality of second electrodes to second electrodes which are different from the part of the plurality of second electrodes via electric conductors.

Abstract: The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)?C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.

Abstract: There is provided a method for manufacturing a flexible semiconductor device.

Abstract: The tactile sense presentation device comprises: first electrodes covered with an insulating film and arranged on a same plane; second electrodes arranged on a same plane with tops exposed to outside; and a control unit performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of first electrodes to generate electric fields which are changed by the part of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of second electrodes to cause the electric currents to flow from the part of second electrodes to second electrodes which are different from the part of second electrodes via electric conductors, characterized in that first electrodes and second electrodes are arranged not to overlap each other.

Abstract: A tactile sense presentation device including: a tactile-sense presentation unit having a first working electrode group of a plurality of first working electrodes arranged along a first direction; and a control unit operable to apply a first tactile sense signal having a first waveform to each of the first working electrodes. The control unit applies the first tactile sense signal, in which a phase difference corresponding to a distance between adjacent first working electrodes is applied to the first waveform, to each of the plurality of first working electrodes so as to cause the first waveform to travel along the first direction at a predetermined speed.

Abstract: A touch panel device with the tactile sense presenting function according to this embodiment includes the plurality of electrodes 1 arranged on the single plane, and the controller 20. The controller 20 performs a first operation and a second operation in a time division manner. The first operation includes applying the first voltage which changes temporally, to some of the electrodes 1, detecting voltages generated on at least some of the remaining electrodes 1 in this state, and detecting the position of the dielectric which is in proximity to the touch panel device, on the basis of the detected voltages. The second operation includes applying the second voltage which changes temporally, to some of the electrodes 1, and generating electric field with the some working electrodes 1.

Abstract: The tactile sense presentation device comprises: a plurality of first electrodes covered with an insulating film and arranged on a same plane; a plurality of second electrodes arranged on the plane with tops exposed to outside; and a control unit performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of the plurality of first electrodes to generate electric fields which are changed by the part of the plurality of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of the plurality of second electrodes to cause the electric currents to flow from the part of the plurality of second electrodes to second electrodes which are different from the part of the plurality of second electrodes via electric conductors.

Abstract: An electrochemical detector is an electrochemical detector for detecting a substance in a liquid by generating a redox cycle, the electrochemical detector comprising: a first working electrode having a first electrode surface, a second working electrode having a second electrode surface, and a plurality of insulating spacer particles, wherein the first and second electrode surfaces are placed so as to face each other so that an electric field is formed between the first and second electrode surfaces, and the plurality of spacer particles are placed along the first and second electrode surfaces so as to separate the first and second electrode surfaces from each other.

Abstract: There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additive 12 that boils upon heating the resin 13. Upon the heating of the resin 13, the metal particles melt and the boiling convection additive 12 convects within the resin 13. This flip-chip mounting resin composition is supplied between a circuit substrate 10 and a semiconductor chip 20, and subsequently the resin 13 is heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip.

Abstract: [Means for Solving Problem] A semiconductor chip 20 having a plurality of electrode terminals 12 is held to oppose a circuit board 21 having a plurality of connection terminals 11 with a given gap provided therebetween, and the semiconductor chip 20 and the circuit board 21 in this state are dipped in a dipping bath 40 containing a melted resin 14 including melted solder particles for a given period of time. In this dipping process, the melted solder particles self-assemble between the connection terminals 11 of the circuit board 21 and the electrode terminals 12 of the semiconductor chip 20, so as to form connectors 22 between these terminals. Thereafter, the semiconductor chip 20 and the circuit board 21 are taken out of the dipping bath 40, and the melted resin 14 having permeated into the gap between the semiconductor chip 20 and the circuit board 21 is cured, so as to complete a flip-chip mounting body.

Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

Abstract: A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.

Abstract: Provided is an electronic paper that permits a high-quality, large area to be easily created. Also provided is a method for producing the electronic paper. The electronic paper comprises: a first substrate upon which first electrodes are formed and a second substrate upon which second electrodes are formed, said first substrate and second substrate disposed so as to face each other; and a plurality of cell spaces constituting pixels between said first substrate and second substrate. The first substrate comprises a plurality of first sheet members, each having a first electrode formed thereon. By disposing a cover substrate on said first sheet members, each with a partition wall therebetween, a plurality of subsheet formations comprising the plurality of cell spaces partitioned by the partition walls are formed, and the first electrodes are connected in between adjacent subsheet formations.

Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

Abstract: A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

Abstract: A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

Abstract: There is provided a method for manufacturing a flexible semiconductor device.

Abstract: There is provided a method for manufacturing a flexible semiconductor device.