Abstract: A light control device according to the present disclosure includes: stacked M (provided that M?1) light control layers 113M in each of which a first nanocarbon film 114, a first intermediate layer 117A, a dielectric material layer 116, and a second intermediate layer 117B are stacked; and a second nanocarbon film 115 formed on the second intermediate layer 117B included in an M-th light control layer 113M. A voltage is applied to the first nanocarbon film 114 and the second nanocarbon film 115.

Abstract: Provided is an imaging element including: a light receiving element 20; and a stacked structure body 130 that is placed on a light incident side of the light receiving element 20 and in which a semiconductor layer 131 and a nanocarbon film 132 to which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layer 131 is made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A light control device 10 includes a pair of electrodes 611 and 612 and a stacked structure body 613? of a plurality of light control layers 613 sandwiched by the pair of electrodes 611 and 612; and each light control layer 613 has a stacked structure of a first insulating layer 614, a first nanocarbon film 615 doped with an n-type impurity or not doped with an impurity, a second insulating layer 617, and a second nanocarbon film 616 doped with a p-type impurity or not doped with an impurity.

Abstract: A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.

Abstract: A core-shell type magnetic particle comprises magnetic metal particle and an oxide coating layer formed on the surface of the magnetic metal particle. The magnetic metal particle contains a magnetic metal containing at least one selected from the group consisting of Fe, Co and Ni, a nonmagnetic metal and at least one element selected from carbon and nitrogen. The oxide coating layer is constituted of an oxide or a composite oxide containing the nonmagnetic metal which is one of the constituents of the magnetic metal particle.

Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

Abstract: A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: Disclosed herein is a solid-state imaging element including: a plurality of pixels including a photoelectric conversion section; and a nano-carbon laminated film disposed on a side of a light receiving surface of the photoelectric conversion section and formed with a plurality of nano-carbon layers, transmittance of light and a wavelength region of transmissible light changing in the nano-carbon laminated film according to a voltage applied to the nano-carbon laminated film.

Abstract: A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: The present invention provides a small antenna device realizing both miniaturization including lower profile and a broader band in a frequency band of hundreds MHz to 5 GHz and which can be mounted on a small device such as a cellular phone. An antenna device includes: a finite ground plane; a rectangular conductor plate provided above the finite ground plane, whose one side is connected to the finite ground plane, and having a bent portion substantially parallel with the one side; an antenna disposed substantially parallel with the finite ground plane above the finite ground plane, extending in a direction substantially perpendicular to the one side, and having a feeding point positioned near the other side facing the one side of the rectangular conductor plate; and a magnetic material provided in at least a part of space between the finite ground plane and the antenna.