Abstract: Provided is a method for producing a seamless tube, in which after a starting material to be extruded has been heated to a heating temperature T [° C.] satisfying the relationship of Formula (1) or Formula (2) depending on the outside diameter d0 [mm] thereof, the starting material is hot extruded by providing a solid lubricating glass between the starting material to be extruded and a die, whereby a transverse flaw on the outer surface in the top portion of tube can be prevented when hot extrusion is performed by using a starting material for extrusion having low deformability at high temperatures. When d0<200, T?1250+1.1487×A?7.838×ln(t0/t)?10.135×ln(d0/d) . . . (1); when d0?200, T?1219+1.1487×A?7.838×ln(t0/t)?10.135×ln(d0/d) . . . (2), where A=L/Vav×1000 [msec.].

Abstract: Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time.

Abstract: To provide a high-frequency magnetic material having a superior radio wave absorption property in a high frequency region and a method of manufacturing the same. The high-frequency magnetic material and the method of manufacturing the same includes a magnetic substance containing metal nanoparticles, the metal nanoparticles are magnetic metals containing at least one kind of Fe, Co, and Ni, an average particle diameter of the metal nanoparticles is equal to or less than 200 nm, first clusters having network-like structures with continuous metal nanoparticles and the average diameter equal to or less than 10 ?m are formed, second clusters having network-like structures with the continuous first clusters and the average diameter equal to or less than 100 ?m are formed, and the entire magnetic substance has a network-like structure with the continuous second clusters.

Abstract: The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band.

Abstract: A solid-state imaging device includes: a plurality of pixels arrayed in the vertical transfer direction and in the horizontal transfer direction; a vertical CCD shift register disposed between two pixels adjacent in the horizontal transfer direction of the plurality of pixels; a first channel stop portion used for separation between pixels, formed between the two pixels adjacent in the horizontal transfer direction, and pixels adjacent to the two pixels adjacent in the horizontal transfer direction, in the horizontal transfer direction; and a readout gate portion and a second channel stop portion, formed in a direction parallel to the vertical transfer direction between the pixels and the vertical CCD shift register, with the two pixels adjacent in the horizontal transfer direction sharing the vertical CCD shift register, and with an insulating layer which is thicker than the gate insulating layer of the vertical CCD shift register being formed above the first channel stop portion.

Abstract: The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band.

Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Abstract: A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

Abstract: Provided is a method for producing a seamless tube, in which after a starting material to be extruded has been heated to a heating temperature T [° C.] satisfying the relationship of Formula (1) or Formula (2) depending on the outside diameter d0 [mm] thereof, the starting material is hot extruded by providing a solid lubricating glass between the starting material to be extruded and a die, whereby a transverse flaw on the outer surface in the top portion of tube can be prevented when hot extrusion is performed by using a starting material for extrusion having low deformability at high temperatures. When d0<200, T?1250+1.1487×A?7.838×ln(t0/t)?10.135×ln(d0/d) . . . (1); when d0?200, T?1219+1.1487×A?7.838×ln(t0/t)?10.135×ln(d0/d) . . . (2), where A=L/Vav×1000 [insect.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.

Abstract: A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2?h?t/2??inequality 1.

Abstract: Intended is to provide an apparatus, which is small in size and low at cost and which can manufacture a minus-ion generating liquid in a large quantity stably and continuously by a method safer than that of the prior art. In the apparatus, a single-stage reproducing pump comprises a casing having a suction port for sucking a liquid and a discharge port for discharging the liquid sucked from the suction port, an impeller disposed in the casing and forming a multiplicity of blades on the circumference of its disc, and a passage formed in the casing along the outer circumference of that impeller for guiding the liquid sucked from the suction port, to the discharge port. The area normal to the liquid flow direction of the passage becomes narrower from the suction port side to the discharge port side.

Abstract: A precursor particle having a particle size of 10 nm or more and 1 ?m or less, and comprising a first compound selected from an alkoxide, a hydroxide, a sulfate, a nitrate, a carbonate, or a carboxylate of magnetic metal containing at least one metal of Fe and Co, and a second compound selected from an alkoxide or a hydroxide, a sulfate, a nitrate, a carbonate, or a carboxylate of a metal element for forming an oxide, is prepared. Then the precursor particle is heated in a reducing atmosphere to form an insulating particle made of an oxide of the metal element by decomposing the second compound, and to precipitate a particle of the magnetic metal in the insulating particle at a particle size of 1 nm or more and 100 nm or less, thereby manufacturing a high frequency magnetic material.

Abstract: An insulating magnetic metal particle includes a magnetic metal particle containing at least one metal selected from the group consisting of Co, Fe, and Ni and having a diameter of 5 to 500 nm, a first inorganic insulating layer made of an oxide that covers the surface of the magnetic metal particle, and a second inorganic insulating layer made of an oxide that produces a eutectic crystal by reacting together with the first inorganic insulating layer at the time of heating them, the second inorganic insulating layer being coated on the first inorganic insulating layer. A thickness ratio of the second inorganic insulating layer with respect to the first inorganic insulating layer is set so that the first inorganic insulating layer remains on the surface of the magnetic metal particle after producing the eutectic crystal.