Abstract: A solid-state imaging device includes: a plurality of pixels arrayed in the vertical transfer direction and in the horizontal transfer direction; a vertical CCD shift register disposed between two pixels adjacent in the horizontal transfer direction of the plurality of pixels; a first channel stop portion used for separation between pixels, formed between the two pixels adjacent in the horizontal transfer direction, and pixels adjacent to the two pixels adjacent in the horizontal transfer direction, in the horizontal transfer direction; and a readout gate portion and a second channel stop portion, formed in a direction parallel to the vertical transfer direction between the pixels and the vertical CCD shift register, with the two pixels adjacent in the horizontal transfer direction sharing the vertical CCD shift register, and with an insulating layer which is thicker than the gate insulating layer of the vertical CCD shift register being formed above the first channel stop portion.

Abstract: Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time.

Abstract: A high-frequency magnetic material is provided and includes: an oxide phase including: a first oxide of a first element being at least one selected from the group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and a second oxide of a second element being at least one selected from the group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, and Zn, the first oxide and at least a part of the second oxide being formed into a solid solution; and magnetic metal particles including at least one of Fe and Co and having a particle size of 1 to 100 nm, the magnetic metal particles being deposited on a surface and inside of the oxide phase, the magnetic metal particles occupying 50% of a volume of the high-frequency magnetic material exclusive of a void.

Abstract: Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time.

Abstract: The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band.

Abstract: The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band.

Abstract: The present invention provides a small antenna device realizing both miniaturization including lower profile and a broader band in a frequency band of hundreds MHz to 5 GHz and which can be mounted on a small device such as a cellular phone. An antenna device includes: a finite ground plane; a rectangular conductor plate provided above the finite ground plane, whose one side is connected to the finite ground plane, and having a bent portion substantially parallel with the one side; an antenna disposed substantially parallel with the finite ground plane above the finite ground plane, extending in a direction substantially perpendicular to the one side, and having a feeding point positioned near the other side facing the one side of the rectangular conductor plate; and a magnetic material provided in at least a part of space between the finite ground plane and the antenna.

Abstract: To provide a high-frequency magnetic material having a superior radio wave absorption property in a high frequency region and a method of manufacturing the same. The high-frequency magnetic material and the method of manufacturing the same includes a magnetic substance containing metal nanoparticles, the metal nanoparticles are magnetic metals containing at least one kind of Fe, Co, and Ni, an average particle diameter of the metal nanoparticles is equal to or less than 200 nm, first clusters having network-like structures with continuous metal nanoparticles and the average diameter equal to or less than 10 ?m are formed, second clusters having network-like structures with the continuous first clusters and the average diameter equal to or less than 100 ?m are formed, and the entire magnetic substance has a network-like structure with the continuous second clusters.

Abstract: Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep portion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

Abstract: A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a light receiving area and a photoelectric conversion area both configuring the light receiving pixel; a first well region formed on the opposite side of the light receiving area, having a second conductive type opposite to the first conductive type, and forming an overflow barrier; a second well region of the second conductive type formed in an area except a place corresponding to the photosensor part on the opposite side of the photoelectric conversion area; and a first conductive region formed in an area corresponding to the photosensor part on the opposite side of the photoelectric conversion area.

Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

Abstract: A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

Abstract: A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2?h?t/2??inequality 1.

Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Abstract: A precursor particle having a particle size of 10 nm or more and 1 ?m or less, and comprising a first compound selected from an alkoxide, a hydroxide, a sulfate, a nitrate, a carbonate, or a carboxylate of magnetic metal containing at least one metal of Fe and Co, and a second compound selected from an alkoxide or a hydroxide, a sulfate, a nitrate, a carbonate, or a carboxylate of a metal element for forming an oxide, is prepared. Then the precursor particle is heated in a reducing atmosphere to form an insulating particle made of an oxide of the metal element by decomposing the second compound, and to precipitate a particle of the magnetic metal in the insulating particle at a particle size of 1 nm or more and 100 nm or less, thereby manufacturing a high frequency magnetic material.

Abstract: A high-frequency magnetic material is provided and includes: an oxide phase including: a first oxide of a first element being at least one selected from the group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and a second oxide of a second element being at least one selected from the group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, and Zn, the first oxide and at least a part of the second oxide being formed into a solid solution; and magnetic metal particles including at least one of Fe and Co and having a particle size of 1 to 100 nm, the magnetic metal particles being deposited on a surface and inside of the oxide phase, the magnetic metal particles occupying 50% of a volume of the high-frequency magnetic material exclusive of a void.

Abstract: A core-shell type magnetic particle comprises magnetic metal particle and an oxide coating layer formed on the surface of the magnetic metal particle. The magnetic metal particle contains a magnetic metal containing at least one selected from the group consisting of Fe, Co and Ni, a nonmagnetic metal and at least one element selected from carbon and nitrogen. The oxide coating layer is constituted of an oxide or a composite oxide containing the nonmagnetic metal which is one of the constituents of the magnetic metal particle.

Abstract: A driving device includes a driving control unit that reads out the signal charge generated by at least the charge generating section for a low-sensitivity pixel signal to the charge transfer section, after the predetermined timing, continues incidence of the electromagnetic wave and, after continuing the incidence of the electromagnetic wave, reads out the signal charge generated by at least the charge generating section for a high-sensitivity pixel signal to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section, and, concerning at least one of the signal charges for the high-sensitivity pixel signal and the low-sensitivity pixel signal, every time the signal charge is read out to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section without retaining the signal charge in the charge transfer section.

Abstract: A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a light receiving area and a photoelectric conversion area both configuring the light receiving pixel; a first well region formed on the opposite side of the light receiving area, having a second conductive type opposite to the first conductive type, and forming an overflow barrier; a second well region of the second conductive type formed in an area except a place corresponding to the photosensor part on the opposite side of the photoelectric conversion area; and a first conductive region formed in an area corresponding to the photosensor part on the opposite side of the photoelectric conversion area.

Abstract: A solid-state image pickup device including a charge transferrer to transfer a signal charge obtained through photoelectric conversion; a floating diffusion region; a reset means for resetting the potential of the floating diffusion region; and a current source for supplying, to the floating diffusion region, a signal charge corresponding to the quantity of the signal charge transferred by the charge transferrer. The current source such as a current mirror circuit is interposed between the output stage of a horizontal CCD and the floating diffusion region so as to supply thereto a signal charge corresponding to the quantity of the signal charge transferred by the horizontal CCD, hence separating the horizontal CCD and the floating diffusion region potentially from each other, whereby the supply voltage, i.e., the reset voltage for the floating diffusion region, can be set independently of the potential of the horizontal CCD.