Patents by Inventor Kouichi Takemoto
Kouichi Takemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11572632Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.Type: GrantFiled: November 5, 2019Date of Patent: February 7, 2023Assignee: JX Nippon Mining & Metals CorporationInventors: Kouichi Takemoto, Toru Imori, Takashi Ouchi, Hirofumi Takahashi
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Patent number: 11136680Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.Type: GrantFiled: July 17, 2019Date of Patent: October 5, 2021Assignee: JX Nippon Mining & Metals CorporationInventors: Toru Imori, Kouichi Takemoto
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Patent number: 11041572Abstract: An annular valve in which the shape of a sealing surface of a valve body is optimized thus suppressing the occurrence of pressure loss in gas on the periphery of the sealing surface and extending the service life of the annular valve.Type: GrantFiled: March 16, 2018Date of Patent: June 22, 2021Inventors: Masaru Fujinami, Hirofumi Himei, Tsukasa Suzuki, Kazuhiro Shimizu, Shuji Ishihara, Kazuki Takizawa, Kouichi Takemoto
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Patent number: 10882757Abstract: Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100° C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220° C.Type: GrantFiled: January 13, 2017Date of Patent: January 5, 2021Assignee: JX Nippon Mining & Metals CorporationInventors: Hideyuki Takahashi, Kouichi Takemoto
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Publication number: 20200370668Abstract: An annular valve in which the shape of a sealing surface of a valve body is optimized thus suppressing the occurrence of pressure loss in gas on the periphery of the sealing surface and extending the service life of the annular valve.Type: ApplicationFiled: March 16, 2018Publication date: November 26, 2020Inventors: Masaru FUJINAMI, Hirofumi HIMEI, Tsukasa SUZUKI, Kazuhiro SHIMIZU, Shuji ISHIHARA, Kazuki TAKIZAWA, Kouichi TAKEMOTO
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Publication number: 20200071842Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.Type: ApplicationFiled: November 5, 2019Publication date: March 5, 2020Applicant: JX Nippon Mining & Metals CorporationInventors: Kouichi Takemoto, Toru Imori, Takashi Ouchi, Hirofumi Takahashi
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Publication number: 20190338431Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.Type: ApplicationFiled: July 17, 2019Publication date: November 7, 2019Applicant: JX Nippon Mining & Metals CorporationInventors: Toru IMORI, Kouichi TAKEMOTO
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Patent number: 10400342Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.Type: GrantFiled: October 12, 2016Date of Patent: September 3, 2019Assignee: JX Nippon Mining & Metals CorporationInventors: Toru Imori, Kouichi Takemoto
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Publication number: 20180298506Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.Type: ApplicationFiled: October 12, 2016Publication date: October 18, 2018Inventors: TORU IMORI, KOUICHI TAKEMOTO
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Publication number: 20180237313Abstract: Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100° C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220° C.Type: ApplicationFiled: January 13, 2017Publication date: August 23, 2018Applicant: JX Nippon Mining & Metals CorporationInventors: Hideyuki TAKAHASHI, Kouichi TAKEMOTO
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Patent number: 9340850Abstract: High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an ? ray count of 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to ? ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer ? rays. The disclosed tin, alloy, and method reduce ? dose of tin so as to be adaptable as the foregoing material.Type: GrantFiled: July 25, 2014Date of Patent: May 17, 2016Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Publication number: 20160097139Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode 11 by electrowinning in an electrolytic bath in which a diaphragm 14 is placed between an anode 12 and the cathode 11, by using a raw material for tin as the anode 12 and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.Type: ApplicationFiled: October 1, 2015Publication date: April 7, 2016Inventors: Kouichi Takemoto, Toru Imori, Takashi Ouchi, Hirofumi Takahashi
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Publication number: 20140332404Abstract: High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an ? ray count of 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to ? ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer ? rays. The disclosed tin, alloy, and method reduce ? dose of tin so as to be adaptable as the foregoing material.Type: ApplicationFiled: July 25, 2014Publication date: November 13, 2014Inventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8764877Abstract: Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.Type: GrantFiled: September 28, 2010Date of Patent: July 1, 2014Assignees: JX Nippon Mining & Metals Corporation, Japan New Metals Co., Ltd.Inventors: Jin Sato, Kouichi Takemoto, Takeshi Sasaki, Mikio Ohno, Junji Ogura
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Patent number: 8734633Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using an insoluble electrode as either an anode or a cathode, using a scrap containing conductive oxide as the counter cathode or anode, performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables the efficient recovery of valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.Type: GrantFiled: February 8, 2008Date of Patent: May 27, 2014Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8685225Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.Type: GrantFiled: February 8, 2008Date of Patent: April 1, 2014Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8685226Abstract: Provided is a method of recovering valuable metal from oxide system scrap including the steps of performing electrolysis using an insoluble electrode as an anode and an oxide system scrap as a cathode, and recovering the scrap of the cathode as metal or suboxide. Specifically, this method enables the efficient recovery of valuable metal from oxide system scrap of an indium-tin oxide (ITO) sputtering target or oxide system scrap such as mill ends that arise during the production of such a sputtering target.Type: GrantFiled: March 7, 2008Date of Patent: April 1, 2014Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8585995Abstract: A high purity ZrB2 powder having a purity of 99.9 wt % or higher excluding C and gas components, and a manufacturing method of such high purity ZrB2 powder, including the steps of: subjecting a Zr sponge raw material to electron beam melting and casting to prepare an ingot having a purity of 99.9 wt % or higher; cutting the ingot into a cut powder and hydrogenating the cut powder into ZrH2; pulverizing and dehydrogenating the resultant product into a Zr powder and oxidizing the Zr powder at a high temperature in an oxygen atmosphere into a ZrO2 fine powder; and mixing the ZrO2 fine powder with B having a purity of 99.9 wt % or higher so as to reduce ZrO2 and obtain a ZrB2 powder having a purity of 99.9 wt % or higher. Purity of the ZrB2 powder for use in sintering is made to be 99.Type: GrantFiled: September 5, 2005Date of Patent: November 19, 2013Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8308933Abstract: Provided are a method of recovering valuable metals from IZO scrap, wherein valuable metals are recovered as hydroxides of indium and zinc by using an insoluble electrode as an anode or a cathode and an IZO scrap as the other cathode or anode as the opposite electrode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and valuable metals are recovered as oxides of indium and zinc. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.Type: GrantFiled: January 30, 2009Date of Patent: November 13, 2012Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto
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Patent number: 8308934Abstract: Provided is a method of recovering valuable metals from IZO scrap in which valuable metals are recovered as indium and zinc metals or suboxides by performing electrolysis using an insoluble electrode as an anode and an IZO scrap as a cathode. Specifically, this method enables the efficient recovery of indium and zinc from IZO scrap such as an indium-zinc oxide (IZO) sputtering target or IZO mill ends that arise during the manufacture of such a sputtering target.Type: GrantFiled: December 9, 2008Date of Patent: November 13, 2012Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kouichi Takemoto